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Электронный компонент: FJN598J

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2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
FJN598
J
Si N-channel Junction FET
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
Electrical Characteristics
T
a
=25
C unless otherwise noted
I
DSS
Classification
Symbol
Parameter
Ratings
Units
V
GDO
Gate-Drain Voltage
-20
V
I
G
Gate Current
10
mA
I
D
Drain Current
1
mA
P
D
Power Dissipation
150
mW
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
GDO
Gate-Drain Breakdown Voltage
I
G
= -100uA
-20
V
V
GS
(off)
Gate-Source Cut-off Voltage
V
DS
=5V, I
D
=1
A -0.6
-1.5
V
I
DSS
Drain Current
V
DS
=5V, V
GS
=0
100
350
A
lY
FS
l
Forward Transfer Admittance
V
DS
=5V, V
GS
=0, f=1MHz
0.4
1.2
ms
C
ISS
Input Capacitance
V
DS
=5V, V
GS
=0, f=1MHz
3.5
pF
C
RSS
Output Capacitance
V
DS
=5V, V
GS
=0, f=1MHz
0.65
pF
Classification A
B
C
I
DSS
(
A)
100 ~ 170
150 ~ 240
210 ~ 350
FJN598J
Capacitor Microphone Applications
Especially Suited for use in Audio, Telephone Capacitor Microphones
Excellent Voltage Characteristic
Excellent Transient Characteristic
1. Source 2. Gate 3. Drain
TO-92
1
2002 Fairchild Semiconductor Corporation
FJN598
J
Rev. B1, November 2002
Typical Characteristics
Figure 1. I
D
-V
DS
Figure 2. I
D
-V
DS
Figure 3. I
D
-V
GS
Figure 4.



y
FS



-I
DSS
Figure 5. V
GS(
off)-I
DSS
Figure 6. C
ISS
-V
DS
0
1
2
3
4
5
6
7
8
9
10
0
50
100
150
200
250
300
350
400
450
500
V
GS
= -0.3V
I
DSS
= 200
A
V
GS
= 0
V
GS
= -0.1V
V
GS
= -0.2V
V
GS
= -0.4V
I
D
[
A
]
,
DR
AI
N CU
RR
EN
T
V
DS
[V], DRAIN-SOURCE VOLTAGE
0
1
2
3
4
5
6
7
8
9
10
0
100
200
300
400
500
600
700
800
900
1000
V
GS
= -0.6V
V
GS
= -0.5V
I
D
[
A]
,
DR
A
I
N CURR
E
N
T
V
DS
[V], DRAIN-SOURCE VOLTAGE
I
DSS
= 500
A
V
GS
= -0.4V
V
GS
= -0.3V
V
GS
= -0.2V
V
GS
= -0.1V
V
GS
= 0
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
DS
= 5V
I
D
[mA],
DR
AI
N C
URREN
T
V
GS
[V], GATE-SOURCE VOLTAGE
0.1
1
0.1
1
10
V
DS
= 5V
V
GS
= 0
f=1kHz
l
F
Sl

[
m
s
]
,
F
O
R
W
ARD
T
R
ANS
F
E
R
AD
M
I
TTAN
C
E
I
DSS
[mA], DRAIN CURRENT
0.1
1
0.1
1
10
-
-
-
V
DS
= 5V
I
D
= 1
A
V
GS
(o
ff
)[
V
]
,
G
A
TE
-
S
O
U
R
C
E C
U
T-O
FF VO
LTAG
E
I
DSS
[mA], DRAIN CURRENT
1
10
1
10
100
C
IS
S
[
p
F]
, I
N
P
U
T
CA
PAC
ITAN
CE
V
DS
[V], DRAIN-SOURCE VOLTAGE
2002 Fairchild Semiconductor Corporation
FJN598
J
Rev. B1, November 2002
Typical Characteristics
(Continued)
Figure 7. C
RSS
-V
DS
Figure 8. P
D
-T
A
Figure 9. V
NO
-I
DSS
Figure 10. Z
O
-I
DSS
1
10
0.1
1
10
V
GS
= 0
f = 1MHz
C
rs
s
[
p
F]
,
O
U
T
P
UT C
APA
CI
TANC
E
V
DS
[V], DRAIN-SOURCE VOLTAGE
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
200
P
D
[
m
W]
,
P
O
WE
R
D
I
S
S
I
P
A
T
I
O
N
T
a
[
o
C], AMBIENT TEMPERATURE
10
100
1000
-120
-118
-116
-114
-112
-110
V
NO
:V
CC
=4.5V
V
I
= 0, A CURVE
R
L
= 1K
I
DSS
:V
DS
=5V
V
NO
[d
B
]
, O
U
TPU
T
N
O
ISE
VO
L
T
AG
E
I
DSS
[
A], DRAIN CURRENT
10
100
1000
200
300
400
500
600
700
Z
O
:V
CC
=4.5V
V
IN
= 10mV
f = 1kHz
I
DSS
:V
DS
=5V
Z
O
[
]
,
O
U
TP
UT R
ESISTAN
CE
I
DSS
[
A], DRAIN CURRENT
0.46
0.10
1.27TYP
(R2.29)
3.86MAX
[1.27
0.20
]
1.27TYP
[1.27
0.20
]
3.60
0.20
14.47
0.40
1.02
0.10
(0.25)
4.58
0.20
4.58
+0.25
0.15
0.38
+0.10
0.05
0.38
+0.10
0.05
TO-92
Package Dimensions
FJN598
J
Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
2002 Fairchild Semiconductor Corporation
Rev. I1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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