2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
FJN598
J
Si N-channel Junction FET
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
Electrical Characteristics
T
a
=25
C unless otherwise noted
I
DSS
Classification
Symbol
Parameter
Ratings
Units
V
GDO
Gate-Drain Voltage
-20
V
I
G
Gate Current
10
mA
I
D
Drain Current
1
mA
P
D
Power Dissipation
150
mW
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
GDO
Gate-Drain Breakdown Voltage
I
G
= -100uA
-20
V
V
GS
(off)
Gate-Source Cut-off Voltage
V
DS
=5V, I
D
=1
A -0.6
-1.5
V
I
DSS
Drain Current
V
DS
=5V, V
GS
=0
100
350
A
lY
FS
l
Forward Transfer Admittance
V
DS
=5V, V
GS
=0, f=1MHz
0.4
1.2
ms
C
ISS
Input Capacitance
V
DS
=5V, V
GS
=0, f=1MHz
3.5
pF
C
RSS
Output Capacitance
V
DS
=5V, V
GS
=0, f=1MHz
0.65
pF
Classification A
B
C
I
DSS
(
A)
100 ~ 170
150 ~ 240
210 ~ 350
FJN598J
Capacitor Microphone Applications
Especially Suited for use in Audio, Telephone Capacitor Microphones
Excellent Voltage Characteristic
Excellent Transient Characteristic
1. Source 2. Gate 3. Drain
TO-92
1
2002 Fairchild Semiconductor Corporation
FJN598
J
Rev. B1, November 2002
Typical Characteristics
Figure 1. I
D
-V
DS
Figure 2. I
D
-V
DS
Figure 3. I
D
-V
GS
Figure 4.
y
FS
-I
DSS
Figure 5. V
GS(
off)-I
DSS
Figure 6. C
ISS
-V
DS
0
1
2
3
4
5
6
7
8
9
10
0
50
100
150
200
250
300
350
400
450
500
V
GS
= -0.3V
I
DSS
= 200
A
V
GS
= 0
V
GS
= -0.1V
V
GS
= -0.2V
V
GS
= -0.4V
I
D
[
A
]
,
DR
AI
N CU
RR
EN
T
V
DS
[V], DRAIN-SOURCE VOLTAGE
0
1
2
3
4
5
6
7
8
9
10
0
100
200
300
400
500
600
700
800
900
1000
V
GS
= -0.6V
V
GS
= -0.5V
I
D
[
A]
,
DR
A
I
N CURR
E
N
T
V
DS
[V], DRAIN-SOURCE VOLTAGE
I
DSS
= 500
A
V
GS
= -0.4V
V
GS
= -0.3V
V
GS
= -0.2V
V
GS
= -0.1V
V
GS
= 0
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
DS
= 5V
I
D
[mA],
DR
AI
N C
URREN
T
V
GS
[V], GATE-SOURCE VOLTAGE
0.1
1
0.1
1
10
V
DS
= 5V
V
GS
= 0
f=1kHz
l
F
Sl
[
m
s
]
,
F
O
R
W
ARD
T
R
ANS
F
E
R
AD
M
I
TTAN
C
E
I
DSS
[mA], DRAIN CURRENT
0.1
1
0.1
1
10
-
-
-
V
DS
= 5V
I
D
= 1
A
V
GS
(o
ff
)[
V
]
,
G
A
TE
-
S
O
U
R
C
E C
U
T-O
FF VO
LTAG
E
I
DSS
[mA], DRAIN CURRENT
1
10
1
10
100
C
IS
S
[
p
F]
, I
N
P
U
T
CA
PAC
ITAN
CE
V
DS
[V], DRAIN-SOURCE VOLTAGE
2002 Fairchild Semiconductor Corporation
Rev. I1
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As used herein:
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when properly used in accordance with instructions for use
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Advance Information
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This datasheet contains the design specifications for
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This datasheet contains final specifications. Fairchild
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