2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
FJNS42
07R
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
Electrical Characteristics
T
a
=25
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
-50
V
V
CEO
Collector-Emitter Voltage
-50
V
V
EBO
Emitter-Base Voltage
-10
V
I
C
Collector Current
-100
mA
P
C
Collector Power Dissipation
300
mW
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
= -10
A, I
E
=0
-50
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= -100
A, I
B
=0
-50
V
I
CBO
Collector Cut-off Current
V
CB
= -40V, I
E
=0
-0.1
A
h
FE
DC Current Gain
V
CE
= -5V, I
C
= -5mA
68
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -10mA, I
B
= -0.5mA
-0.3
V
C
ob
Output Capacitance
V
CB
= -10V, I
E
=0
f=1MHz
5.5
pF
f
T
Current Gain-Bandwidth Product
V
CE
= -10V, I
C
= -5mA
200
MHz
V
I
(off)
Input Off Voltage
V
CE
= -5V, I
C
= -100
A
-0.4
V
V
I
(on)
Input On Voltage
V
CE
= -0.3V, I
C
= -2mA
-2.5
V
R
1
Input Resistor
15
22
29
K
R
1
/R
2
Resistor Ratio
0.42
0.47
0.52
FJNS4207R
Switching Application
(Bias Resistor Built In)
Switching circuit, Inverter, Interface circuit, Driver Circuit
Built in bias Resistor (R
1
=22K
, R
2
=47K
)
Complement to FJNS3207R
Equivalent Circuit
B
E
C
R1
R2
1.Emitter 2. Collector 3. Base
TO-92S
1
2002 Fairchild Semiconductor Corporation
FJNS42
07R
Rev. A, August 2002
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Input On Voltage
Figure 3. Input Off Voltage
Figure 4. Power Derating
-0.1
-1
-10
-100
1
10
100
1000
V
CE
= - 5V
R
1
= 22K
R
2
= 47K
h
FE
,
DC CU
RRE
NT
G
A
IN
I
C
[mA], COLLECTOR CURRENT
-0.1
-1
-10
-100
-0.1
-1
-10
-100
V
CE
=- 0.3V
R
1
= 22K
R
2
= 47K
V
I
(
on)
[V
], INP
U
T
V
O
LT
A
G
E
I
C
[mA], COLLECTOR CURRENT
-0.1
-0.3
-0.5
-0.7
-0.9
-1.1
-1.3
-1.5
-1.7
-1.9
-2.1
-1
-10
-100
-1k
-10k
V
CE
= - 5V
R
1
= 22K
R
2
= 47K
I
C
[
A], CO
L
L
ECT
O
R CU
RR
EN
T
V
I
(off)[V], INPUT OFF VOLTAGE
0
25
50
75
100
125
150
175
0
50
100
150
200
250
300
350
400
P
C
[
m
W]
,
PO
WER
DI
SSI
PAT
I
O
N
T
a
[
o
C], AMBIENT TEMPERATURE
2002 Fairchild Semiconductor Corporation
Rev. I1
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when properly used in accordance with instructions for use
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reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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Advance Information
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This datasheet contains the design specifications for
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