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Электронный компонент: FJP13007H1TU

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2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FJP13007 Rev. D
FJP1
30
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FJP13007
High Voltage Fast-Switching NPN Power Transistor
High Voltage Capability
High Switching Speed
Suitable for Electronic Ballast and Switching Mode Power Supply
Absolute Maximum Ratings
T
C
= 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
700
V
V
CEO
Collector-Emitter Voltage
400
V
V
EBO
Emitter-Base Voltage
9
V
I
C
Collector Current (DC)
8
A
I
CP
Collector Current (Pulse)
16
A
I
B
Base Current
4
A
P
C
Collector Dissipation (T
C
= 25
C)
80
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-65 ~ 150
C
1.Base 2.Collector 3.Emitter
1
TO-220
2
www.fairchildsemi.com
FJP13007 Rev. D
FJP1
30
07
H
i
gh V
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Electrical Characteristics
T
C
= 25C unless otherwise noted
* Pulse Test: PW
300
s, Duty Cycle
2%
h
FE
Classification
Symbol
Parameter
Conditions
Min.
Typ.
Max
Units
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= 10mA, I
B
= 0
400
V
I
EBO
Emitter Cut-off Current
V
EB
= 9V, I
C
= 0
1
mA
h
FE1
h
FE2
DC Current Gain *
V
CE
= 5V, I
C
= 2A
V
CE
= 5V, I
C
= 5A
8
5
60
30
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 2A, I
B
= 0.4A
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 2A
1.0
2.0
3.0
V
V
V
V
BE(sat)
Base-Emitter Saturation Voltage
I
C
= 2A, I
B
= 0.4A
I
C
= 5A, I
B
= 1A
1.2
1.6
V
V
f
T
Current Gain Bandwidth Product
V
CE
= 10V, I
C
= 0.5A
4
MHz
C
ob
Output Capacitance
V
CB
= 10V, f = 0.1MHz
110
pF
t
ON
Turn On Time
V
CC
= 125V, I
C
= 5A
I
B1
= -I
B2
= 1A
R
L
= 25
1.6
s
t
STG
Storge Time
3.0
s
t
F
Fall Time
0.7
s
Classification H1
H2
h
FE1
15 ~ 28
26 ~ 39
3
www.fairchildsemi.com
FJP13007 Rev. D
FJP1
30
07
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gh V
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Typical Performance Characteristics
Figure 1. DC Current Gain
Figure 2. Saturation Voltage
Figure 3. Collector Output Capacitance
Figure 4. Turn On Time
Figure 5. Turn Off Time
Figure 6. Forward Biased Safe Operating Area
0.1
1
10
1
10
100
V
CE
= 5V
h
FE
,
DC
CU
RR
ENT
GA
IN
I
C
[A], COLLECTOR CURRENT
0.1
1
10
100
0.01
0.1
1
10
I
C
= 3 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(sat
), V
CE
(
s
at
)
[
V]
,
SA
TU
R
A
T
I
ON
VO
LT
AG
E
I
C
[A], COLLECTOR CURRENT
0.1
1
10
100
1000
1
10
100
1000
C
ob
[pF
], O
U
TP
UT
CA
PA
CIT
A
N
C
E
V
CB
[V], COLLECTOR-BASE VOLTAGE
0.1
1
10
10
100
1000
V
CC
=125V
I
C
=5I
B
t
D
, V
BE
(off)=5V
t
R
t
R
, t
D
[ns
], T
URN
O
N
TI
M
E
I
C
[A], COLLECTOR CURRENT
0.1
1
10
10
100
1000
10000
V
CC
=125V
I
C
=5I
B
t
F
t
STG
t
STG
, t
F
[n
s],
TU
RN
OFF
TIM
E
I
C
[A], COLLECTOR CURRENT
1
10
100
1000
0.01
0.1
1
10
100
10
s
100
s
1ms
DC
I
C
[
A
]
,
C
O
LL
EC
TOR
CU
RRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
4
www.fairchildsemi.com
FJP13007 Rev. D
FJP1
30
07
H
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gh V
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age
F
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ans
i
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or
Typical Performance Characteristics
(Continued)
Figure 7. Reverse Biased Safe Operating Area
Figure 8. Power Derating
10
100
1000
10000
0.01
0.1
1
10
100
Vcc=50V,
I
B1
=1A, I
B2
= -1A
L = 1mH
I
C
[A]
,
CO
LL
ECT
O
R
CU
RRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
80
90
100
P
C
[
W
], PO
W
E
R

D
I
SS
IPA
T
IO
N
T
C
[
o
C], CASE TEMPERATURE
5
www.fairchildsemi.com
FJP13007 Rev. D
FJP1
30
07
H
i
gh V
o
lt
age
F
a
st
-
S
wi
tc
hing N
P
N
Pow
e
r T
r
ans
i
st
or
Mechanical Dimensions
4.50
0.20
9.90
0.20
1.52
0.10
0.80
0.10
2.40
0.20
10.00
0.20
1.27
0.10
3.60
0.10
(8.70)
2.80
0.10
15.90
0.20
10.08
0.30
18.95MAX.
(1.70)
(3.70)
(3.00)
(1.46)
(1.00)
(45
)
9.20
0.20
13.08
0.20
1.30
0.10
1.30
+0.10
0.05
0.50
+0.10
0.05
2.54TYP
[2.54
0.20
]
2.54TYP
[2.54
0.20
]
TO-220
Dimensions in Millimeters