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Электронный компонент: FJP5355

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2003 Fairchild Semiconductor Corporation
Rev. A, September 2003
FJP5
355
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Electrical Characteristics
T
C
=25
C unless otherwise noted
* Pulse test: PW
300
s, Duty cycle
2%
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
900
V
V
CEO
Collector-Emitter Voltage
440
V
V
EBO
Emitter- Base Voltage
14.5
V
I
C
Collector Current (DC)
5
A
I
CP
Collector Current (Pulse)
7.5
A
I
B
Base Current
2.5
A
P
C
Collector Dissipation (T
C
=25
C)
50
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 65 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector- Base Breakdown Voltage
I
C
= 500
A, I
E
= 0
900
V
BV
CEO
Collector- Emitter Breakdown Voltage
I
C
= 5mA, I
B
= 0
440
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= 500
A, I
C
= 0
14.5
V
I
EBO
Emitter Cut-off Current
V
EB
= 12V, I
C
= 0
1
A
h
FE
*DC Current Gain
V
CE
= 2V, I
C
= 10mA
V
CE
= 2V, I
C
= 0.8A
V
CE
= 2V, I
C
= 2.5A
15
15
7
V
CE
(sat)
*Collector-Emitter Saturation Voltage
I
C
= 0.8A, I
B
= 0.2A
I
C
= 2.5A, I
B
= 0.8A
0.2
0.4
V
V
V
BE
(sat)
*Base-Emitter Saturation Voltage
I
C
= 0.8A, I
B
= 0.2A
I
C
= 2.5A, I
B
= 0.8A
1.0
1.2
V
V
f
T
Current Gain Bandwidth Product
V
CE
= 10V, I
C
= 0.2A
4
MHz
t
ON
Turn On Time
V
CC
= 125V, I
C
= 0.5A
I
B1
= 45mA, -I
B2
= 0.5A
PW=300
s
1.1
s
t
STG
Storage Time
1.2
s
t
F
Fall Time
0.4
s
FJP5355
High Voltage Switch Mode Application
High Speed Switching
Very Low Switching Losses
Very Low Operating Temperature
Wide RBSOA
1.Base 2.Collector 3.Emitter
1
TO-220
2003 Fairchild Semiconductor Corporation
FJP5
355
Rev. A, September 2003
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC Current Gain
Figure 3. Saturation Voltage
Figure 4. Saturation Voltage
Figure 5. Resistive Load Switching
Figure 6. Power Derating Curve
0
1
2
3
4
5
0
1
2
3
4
5
I
B
=600mA
I
B
=300mA
I
B
=200mA
I
B
=100mA
I
C
[
A
]
,

CO
L
L
ECT
O
R CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
1m
10m
100m
1
10
1
10
100
1000
V
CE
= 5V
T
C
= 125
o
C
T
C
= 75
o
C
T
C
= 25
o
C
T
C
= - 40
o
C
h
FE
,
DC CURREM
T
GAIN
I
C
[A], COLLECTOR CURRENT
1m
10m
100m
1
10
0.01
0.1
1
10
I
C
= 4 I
B
T
C
= 125
o
C
T
C
= 75
o
C
T
C
= 25
o
C
T
C
= - 40
o
C
V
CE
(
s
a
t
)
[V
]
,
S
A
T
URAT
IO
N
V
O
L
T
A
G
E
I
C
[A], COLLECTOR CURRENT
1m
10m
100m
1
10
0.1
1
10
I
C
= 4 I
B
T
C
= 125
o
C
T
C
= 75
o
C
T
C
= 25
o
C
T
C
= - 40
o
C
V
BE
(
s
a
t
)

[
V
]
,
SAT
URAT
ION
VOL
T
A
GE
I
C
[A], COLLECTOR CURRENT
1
10
100
1000
4
0.3
t
F
t
STG
I
B1
=45mA, I
B2
=-500mA
V
CC
=125V,PW=300us
t
ST
G
& t
F
[
n
s
]
, Sw
it
c
h
i
n
g
T
i
me
I
C
[A], COLLECTOR CURRENT
0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
P
C
[
W
]
,
CO
LLE
CT
O
R
P
O
W
E
R
DI
S
S
IP
A
T
I
O
N
T
C
[
o
C], CASE TEMPERATURE
2003 Fairchild Semiconductor Corporation
FJP5
355
Rev. A, September 2003
Typical Characteristics
(Continued)
Figure 7. Reverse Biased Safe Operating Area
Figure 8. Forward Biased Safe Operating Area
10
100
1000
1
2
3
4
5
6
I
B1
=1A, R
B2
=0
L=1mH, V
CC
=50V
I
C
[
A
]
,
CO
L
L
ECT
O
R
CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
1
10
100
1000
0.01
0.1
1
10
100
500
s
1ms
10ms
DC
I
CP
(max)
I
C
(max)
I
C
[
A
]
,
CO
L
L
E
CT
OR
CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
4.50
0.20
9.90
0.20
1.52
0.10
0.80
0.10
2.40
0.20
10.00
0.20
1.27
0.10
3.60
0.10
(8.70)
2.80
0.10
15.90
0.20
10.08
0.30
18.95MAX.
(1.70)
(3.70)
(3.00)
(1.46)
(1.00)
(45
)
9.20
0.20
13.08
0.20
1.30
0.10
1.30
+0.10
0.05
0.50
+0.10
0.05
2.54TYP
[2.54
0.20
]
2.54TYP
[2.54
0.20
]
TO-220
Package Dimensions
FJP5
355
Dimensions in Millimeters
2003 Fairchild Semiconductor Corporation
Rev. A, September 2003
2003 Fairchild Semiconductor Corporation
Rev. I5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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