2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
FJX1
182
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
Electrical Characteristics
T
a
=25
C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Ratings
Units
V
CBO
Collector-Base Voltage
-35
V
V
CEO
Collector-Emitter Voltage
-30
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current
-500
mA
P
C
Collector Power Dissipation
150
mW
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
I
CBO
Collector Cut-off Current
V
CB
= -35, I
E
=0
-0.1
A
I
EBO
Emitter Cut-off Current
V
EB
= -5V, I
C
=0
-0.1
A
h
FE1
h
FE2
DC Current Gain
V
CE
= -1V, I
C
= -100mA
V
CE
= -6V, I
C
= -400mA
70
25
240
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -100mA, I
B
= -10mA
-0.1
-0.25
V
V
BE
(on)
Base-Emitter On Voltage
I
C
= -100mA, V
CE
= -1V
-0.8
-1.0
V
f
T
Current Gain Bandwidth Product
I
C
= -20mA, V
CE
= -6V
200
MHz
C
ob
Output Capacitance
V
CB
= -6V, I
E
= 0
f=1MHz
13
pF
Classification
O
Y
h
FE1
70 ~ 140
120 ~ 240
FJX1182
Low Frequency Power Amplifier
SDX
Marking
Grade
1. Base 2. Emitter 3. Collector
1
2
SOT-323
3
2002 Fairchild Semiconductor Corporation
FJX1
182
Rev. A2, August 2002
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance
-0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-20
-40
-60
-80
-100
-120
-140
-160
-180
-200
I
B
=-1.0mA
I
B
=-1.2mA
I
B
=-0.8mA
I
B
=-1.4mA
I
B
=-0.6mA
I
B
=-0.4mA
I
B
=-1.6mA
I
B
=-0.2mA
I
C
[
m
A]
,
COL
L
E
CT
OR
CURRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-1
-10
-100
-1000
10
100
1000
V
CE
= -1V
h
FE
, DC C
URRE
NT
G
A
I
N
I
C
[mA], COLLECTOR CURRENT
-1
-10
-100
-1000
-0.01
-0.1
-1
-10
I
C
= 10 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(s
a
t
),
V
CE
(s
a
t
)[
V
]
,
SA
TU
R
A
TIO
N
VO
L
T
A
G
E
I
C
[mA], COLLECTOR CURRENT
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1
-10
-100
-1000
V
CE
= -1V
I
C
[m
A], CO
L
L
E
C
T
O
R CURR
E
N
T
V
BE
[V], BASE-EMITTER VOLTAGE
-1
-10
-100
-300
1
10
20
f = 1MHz
I
E
=0
C
ob
[
p
F]
,
CAPACI
T
ANCE
V
CB
[V], COLLECTOR BASE VOLTAGE
2002 Fairchild Semiconductor Corporation
Rev. I1
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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Advance Information
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This datasheet contains the design specifications for
product development. Specifications may change in
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This datasheet contains preliminary data, and
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changes at any time without notice in order to improve
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This datasheet contains final specifications. Fairchild
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