2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
FJX5
97J
Si N-channel Junction FET
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
Electrical Characteristics
T
a
=25
C unless otherwise noted
I
DSS
Classification
Symbol
Parameter
Ratings
Units
V
GDO
Gate-Drain Voltage
-20
V
I
G
Gate Current
10
mA
I
D
Drain Current
1
mA
P
D
Power Dissipation
100
mW
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
GDO
Gate-Drain Breakdown Voltage
I
G
= -100uA
-20
V
V
GS
(off)
Gate-Source Cut-off Voltage
V
DS
=5V, I
D
=1
A -0.6
-1.5
V
I
DSS
Drain Current
V
DS
=5V, V
GS
=0
100
800
A
lY
FS
l
Forward Transfer Admittance
V
DS
=5V, V
GS
=0, f=1MHz
0.4
1.2
ms
C
ISS
Input Capacitance
V
DS
=5V, V
GS
=0, f=1MHz
3.5
pF
C
RSS
Output Capacitance
V
DS
=5V, V
GS
=0, f=1MHz
0.65
pF
Classification A
B
C
D
E
I
DSS
[
A]
100 ~ 170
150 ~ 240
210 ~ 350
320 ~ 480
440 ~ 800
FJX597J
Capacitor Microphone Applications
Especially Suited for use in Audio, Telephone Capacitor Microphones
Excellent Voltage Characteristic
Excellent Transient Characteristic
SCX
Marking
Grade
1. Base 2. Emitter 3. Collector
1
2
SOT-323
3
2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
FJX5
97J
Specified Test Circuit
T
a
=25
C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
G
V
Voltage Gain
V
IN
=10mV, f=1KHz
-3
dB
G
V
V
Reduced Voltage Characteristic
V
IN
=10mV, f=1KHz
V
CC
=4.5V
1.5V
-1.2
-3.5
dB
G
V
F
Frequency Characteristic
f=1KHz to 110Hz
-1
dB
Z
IN
Input Resistance
f=1KHz
25
M
Z
O
Output Resistance
f=1KHz
700
THD
Total Harmonic Distortion
V
IN
=30mV, f=1KHz
1
%
V
NO
Output Noise Voltage
V
IN
=0, A CURVE
-110
dB
C
in
=15p
V
VTVM
OSC
R
L
=1k
THD
A
+
33u
V
CC
=4.5V
V
CC
=1.5V
B
1k
2001 Fairchild Semiconductor Corporation
FJX5
97J
Rev. A1, June 2001
Typical Characteristics
Figure 1. I
D
-V
DS
Figure 3. I
D
-V
GS
Figure 5. V
GS
(off)-I
DSS
Figure 2. I
D
-V
DS
Figure 4.
y
FS
-I
DSS
Figure 6. C
ISS
-V
DS
0
1
2
3
4
5
6
7
8
9
10
0
50
100
150
200
250
300
350
400
450
500
V
GS
= -0.3V
I
DSS
= 200
A
V
GS
= 0
V
GS
= -0.1V
V
GS
= -0.2V
V
GS
= -0.4V
I
D
[
A],
DRAIN CURR
ENT
V
DS
[V], DRAIN-SOURCE VOLTAGE
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
DS
= 5V
I
D
[
m
A]
,
DRAI
N
CU
RRE
NT
V
GS
[V], GATE-SOURCE VOLTAGE
0.1
1
0.1
1
10
-
-
-
V
DS
= 5V
I
D
= 1
A
V
GS
(o
ff)[V], G
A
T
E
-S
O
U
R
C
E
C
U
T
-OF
F
V
O
L
T
A
G
E
I
DSS
[mA], DRAIN CURRENT
0
1
2
3
4
5
6
7
8
9
10
0
100
200
300
400
500
600
700
800
900
1000
V
GS
= -0.6V
V
GS
= -0.5V
I
D
[
A]
, DRAIN CURREN
T
V
DS
[V], DRAIN-SOURCE VOLTAGE
I
DSS
= 500
A
V
GS
= -0.4V
V
GS
= -0.3V
V
GS
= -0.2V
V
GS
= -0.1V
V
GS
= 0
0.1
1
0.1
1
10
V
DS
= 5V
V
GS
= 0
f=1kHz
l
F
Sl
[
m
s
]
,
F
O
RWARD
T
R
A
N
SF
ER
AD
M
I
TT
AN
CE
I
DSS
[mA], DRAIN CURRENT
1
10
1
10
100
C
IS
S
[p
F
], IN
PU
T
C
A
P
A
C
I
T
A
N
C
E
V
DS
[V], DRAIN-SOURCE VOLTAGE
2001 Fairchild Semiconductor Corporation
FJX5
97J
Rev. A1, June 2001
Typical Characteristics
(Continued)
Figure 1. C
RSS
-V
DS
Figure 3. V
NO
-I
DSS
Figure 5. Z
I
-I
DSS
Figure 2. P
D
-T
A
Figure 4. Z
O
-I
DSS
Figure 6. THD-I
DSS
1
10
0.1
1
10
V
GS
= 0
f = 1MHz
C
rs
s
[
p
F
]
,
O
U
T
P
UT
C
A
P
A
CI
T
A
NC
E
V
DS
[V], DRAIN-SOURCE VOLTAGE
10
100
1000
-120
-118
-116
-114
-112
-110
V
NO
:V
CC
=4.5V
V
I
= 0, A CURVE
R
L
= 1K
I
DSS
:V
DS
=5V
V
NO
[
d
B]
,
O
U
TP
UT NO
I
SE V
O
L
T
A
G
E
I
DSS
[
A], DRAIN CURRENT
10
100
1000
26
28
30
32
34
36
Z
I
:V
CC
=4.5V
V
IN
= 10mV
f = 1kHz
I
DSS
:V
DS
=5V
Z
I
[M
]
,
IN
PU
T R
E
S
I
ST
A
N
C
E
I
DSS
[
A], DRAIN CURRENT
0
25
50
75
100
125
150
0
20
40
60
80
100
120
140
P
D
[m
W
], P
O
W
E
R
D
I
S
S
IP
A
T
IO
N
T
a
[
o
C], AMBIENT TEMPERATURE
10
100
1000
200
300
400
500
600
700
Z
O
:V
CC
=4.5V
V
IN
= 10mV
f = 1kHz
I
DSS
:V
DS
=5V
Z
O
[
]
,
O
U
T
P
UT
RE
SI
S
T
AN
CE
I
DSS
[
A], DRAIN CURRENT
100
1000
1
10
100
THD:V
CC
= 4.5V
V
IN
= 30mV
f = 1kHz
I
DSS
:V
DS
= 5V
T
HD[
%
]
,
T
O
T
A
L
HA
RM
ON
I
C
DI
S
T
ORT
I
O
N
I
DSS
[
A], DRAIN CURRENT
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