2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FMBM5401 Rev. A
FM
BM54
01
P
N
P
Ge
n
e
ral
Purpos
e Ampli
f
ie
r
FMBM5401
PNP General Purpose Amplifier
This device has matched dies in SuperSOT-6.
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may e impaired.
Notes:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
C
= 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
-150
V
V
CBO
Collector-Base Voltage
-160
V
V
EBO
Emitter-Base Voltage
-5.0
V
I
C
Collector Current - Continuous
-600
mA
T
J
,
T
STG
Operating and Storage Junction Temperature Range
-55 ~ 150
C
Symbol
Parameter
Conditions
Min.
Max
Units
Off Characteristics
BV
CEO
Collector-Emitter Breakdown Voltage *
I
C
= -1.0mA, I
B
= 0
-150
V
BV
CBO
Collector-Base Breakdown Voltage
I
C
= -100
A, I
E
= 0
-160
V
BV
EBO
Emitter-Base Breakdown Voltage
I
C
= -10
A, I
C
= 0
-5.0
V
I
CBO
Collector Cut-off Current
V
CB
= -120V, I
E
= 0
V
CB
= -120V, I
E
= 0, T
a
= 100
C
-50
-50
nA
A
I
EBO
Emitter Cut-off Current
V
EB
= -3.0V, I
C
= 0
-50
nA
On Characteristics*
h
FE1
DC Current Gain
V
CE
= -5V, I
C
= -1mA
50
DIVID1
Variation Ratio of h
FE1
Between Die 1 and Die 2
h
FE1
(Die1)/h
FE1
(Die2)
0.9
1.1
h
FE2
DC Current Gain
V
CE
= -5V, I
C
= -10mA
60
240
DIVID2
Variation Ratio of h
FE2
Between Die 1 and Die 2
h
FE2
(Die1)/h
FE2
(Die2)
0.95
1.05
h
FE3
DC Current Gain
V
CE
= -5V, I
C
= -50mA
50
DIVID3
Variation Ratio of h
FE3
Between Die 1 and Die 2
h
FE3
(Die1)/h
FE3
(Die2)
0.9
1.1
C1
E1
C2
B1
E2
B2
SuperSOT
TM
-6
Mark: .4S2
pin #1
2
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FMBM5401 Rev. A
FM
BM54
01
P
N
P
Ge
n
e
ral
Purpos
e Ampli
f
ie
r
Electrical Characteristics
(
Continued)
T
C
= 25C unless otherwise noted
* Pulse Test: Pulse Width
300ms, Duty Cycle
2.0%
Thermal Characteristics
T
C
= 25C unless otherwise noted
* Device mounted on a 1 in 2 pad of 2 oz coppe
Symbol
Parameter
Conditions
Min.
Max
Units
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
-0.2
-0.5
V
V
V
BE(sat)
Base-Emitter Saturation Voltage
I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
-1
-1
V
V
V
BE(on)
Base-Emitter On Voltage
V
CE
= -5V, I
C
= -10mA
-1
V
DEL
Difference of V
BE(on)
Between Die1 and Die 2
V
BE(on)
(Die1)-V
BE(on)
(Die2)
-8
8
mV
Small Signal Characteristics
f
T
Current Gain Bandwidth Product
V
CE
= -10V, I
C
= -10mA
f = 100MHz
100
300
MHz
C
ob
Output Capacitance
V
CB
= -10V, I
E
= 0, f = 1MHz
6.0
pF
NF
Noise Figure
V
CE
= -5.0V, I
C
= -250
A,
R
S
= 1.0K
, f = 10Hz to 15.7KHz
8.0
dB
Symbol
Parameter
Value
Units
P
D
Total Device Dissipation
700
mW
R
JA
Thermal Resistance, Junction to Ambient, Total
180
C/W
3
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FMBM5401 Rev. A
FM
BM54
01
P
N
P
Ge
n
e
ral
Purpos
e Ampli
f
ie
r
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain
Figure 2. Collector-Emitter Saturation
vs Collector Current
Voltage vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
vs Collector Current
vs Collector Current
Figure 5. Collector-Cutoff Current
Figure 6. Collector-Emitter Breakdown
vs Ambient Temperature
Voltage with Resistance Between
Emitter-Base
1E-4
1E-3
0.01
0.1
1
0
50
100
150
200
- 40
o
C
25
o
C
125
o
C
V
CE
= 5V
h
FE
-
T
YPI
CAL
PUL
SED CURRE
NT
G
A
I
N
I
C
- COLLECTOR CURRENT (A)
0.1
1
10
100
0.0
0.1
0.2
0.3
0.4
- 40
o
C
25
o
C
125
o
C
= 10
V
CE
SAT
-
C
O
LLE
C
TO
R
-
E
M
I
T
TE
R
V
O
LTA
G
E
(
V
)
I
C
- COLLECTOR CURRENT (mA)
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
125
o
C
25
o
C
- 40
o
C
= 10
V
BE
SAT
-
B
A
SE
-
E
M
I
T
T
ER
VO
L
T
AG
E
(
V
)
I
C
- COLLECTOR CURRENT (mA)
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
- 40
o
C
25
o
C
125
o
C
V
CE
= 5V
V
BC(
ON)
-
BAS
E-
E
M
I
T
T
E
R O
N
V
O
L
T
AGE
(
V
)
I
C
- COLLECTOR CURRENT (mA)
25
50
75
100
125
150
0.1
1
10
100
T - AM BIENT TE MPE RATURE ( C)
I
-
C
O
L
L
E
C
T
O
R
CU
RRE
N
T
(
n
A)
A
V = 10 0V
CB
CBO
Between Emitter-Base
0.1
1
10
100
1000
170
180
190
200
210
220
RESISTANCE (k )
BV
-
BR
E
A
KD
OW
N
V
O
L
T
A
G
E
(
V
)
CE
R
4
www.fairchildsemi.com
FMBM5401 Rev. A
FM
BM54
01
P
N
P
Ge
n
e
ral
Purpos
e Ampli
f
ie
r
Typical Performance Characteristics
(Continued)
Figure 7.Input and Output Capacitance
vs Reverse Voltage
1E-4
1E-3
0.01
0.1
1
0
50
100
150
200
- 40
o
C
25
o
C
125
o
C
V
CE
= 5V
h
FE
- T
Y
PICAL
P
U
L
S
ED
CU
RREN
T
GAI
N
I
C
- COLLECTOR CURRENT (A)
5
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FMBM5401 Rev. A
FM
BM54
01
P
N
P
Ge
n
e
ral
Purpos
e Ampli
f
ie
r
Mechanical Dimensions
SuperSOT
TM
-6
Dimensions in Millimeters
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