2006 Fairchild Semiconductor Corporation
1
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FQB3N60C REV. A
FQB3N6
0C
January 2006
QFET
TM
FQB3N60C
600V N-Channel MOSFET
Features
3A, 600V, R
DS(on)
= 3.4
@V
GS
= 10 V
Low gate charge ( typical 10.5 nC)
Low C
rss
( typical 5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.
Absolute Maximum Ratings
Thermal Characteristics
S
D
G
D
2
-PAK
FQB Series
G
S
D
Symbol
Parameter
FQB3N60C
Unit
V
DSS
Drain-Source Voltage
600
V
I
D
Drain Current
- Continuous (T
C
= 25
C)
- Continuous (T
C
= 100
C)
3
1.8
A
A
I
DM
Drain Current
- Pulsed
(Note 1)
12
A
V
GSS
Gate-Source voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
150
mJ
I
AR
Avalanche Current
(Note 1)
3
A
E
AR
Repetitive Avalanche Energy
(Note 1)
7.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
C)
- Derate above 25
C
75
0.62
W
W/
C
T
J,
T
STG
Operating and Storage Temperature Range
-55 to +150
C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds
300
C
Symbol
Parameter
Typ.
Max.
Unit
R
JC
Thermal Resistance, Junction-to-Case
--
1.67
C/W
R
JA
*
Thermal Resistance, Junction-to-Ambient*
--
40
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
--
62.5
C/W
* When mounted on the minimum pad size recommended (PCB Mount)
2
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600V N-Channel MOSFET REV. A
600V N-Ch
annel MOSFET
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25C unless otherwise noted
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
AS
= 3A, V
DD
= 50V, L=30mH, R
G
= 25
, Starting T
J
= 25
C
3. I
SD
3A, di/dt 200A/s, V
DD
BV
DSS
, Starting T
J
= 25
C
4. Pulse Test: Pulse width
300s, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQB3N60C
FQB3N60CTM
D2-PAK
330mm
24mm
800
Symbol
Parameter
Conditions
Min.
Typ.
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250
A
600
--
--
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25C
--
0.6
--
V/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, T
C
= 125
C
--
--
--
--
1
10
A
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30V, V
DS
= 0V
--
--
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30V, V
DS
= 0V
--
--
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
2.0
--
4.0
V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10V, I
D
= 1.5A
--
2.8
3.4
g
FS
Forward Transconductance
V
DS
= 40V, I
D
= 1.5A
(Note 4)
--
3.5
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
--
435
565
pF
C
oss
Output Capacitance
--
45
60
pF
C
rss
Reverse Transfer Capacitance
--
5
8
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 300V, I
D
= 3A
R
G
= 25
(Note 4, 5)
--
12
34
ns
t
r
Turn-On Rise Time
--
30
70
ns
t
d(off)
Turn-Off Delay Time
--
35
80
ns
t
f
Turn-Off Fall Time
--
35
80
ns
Q
g
Total Gate Charge
V
DS
= 480V, I
D
= 3A
V
GS
= 10V
(Note 4, 5)
--
10.5
14
nC
Q
gs
Gate-Source Charge
--
2.1
--
nC
Q
gd
Gate-Drain Charge
--
4.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
3
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
12
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0V, I
S
= 3A
--
--
1.4
V
t
rr
Reverse Recovery Time
V
GS
= 0V, I
S
= 3A
dI
F
/dt =100A/
s
(Note 4)
--
260
--
ns
Q
rr
Reverse Recovery Charge
--
1.6
--
C
3
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600V N-Channel MOSFET REV. A
600V N-Ch
annel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage
Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
0
10
1
10
-1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Notes :
1. 250 s Pulse Test
2. T
C
= 25
I
D
,
Dr
ain
Cur
r
ent
[
A
]
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
0
10
1
150
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 40V
2. 250 s Pulse Test
I
D
, Drai
n C
u
rr
e
n
t [A
]
V
GS
, Gate-Source Voltage [V]
0
1
2
3
4
5
6
7
0
2
4
6
8
10
12
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
DS
(O
N
)
[
],
D
r
ai
n-
S
ource O
n
-
R
esistance
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
-1
10
0
10
1
150
Notes :
1. V
GS
= 0V
2. 250 s Pulse Test
25
I
DR
, R
e
v
e
rse
D
r
a
i
n
C
u
rre
nt [A
]
V
SD
, Source-Drain voltage [V]
10
-1
10
0
10
1
0
100
200
300
400
500
600
700
800
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Note ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Ca
pacit
an
c
e
s
[
p
F]
V
DS
, Drain-Source Voltage [V]
0
2
4
6
8
10
12
0
2
4
6
8
10
12
V
DS
= 300V
V
DS
= 120V
V
DS
= 480V
Note : I
D
= 10A
V
GS
,
G
a
t
e-
Sou
r
ce
Vol
t
ag
e [
V
]
Q
G
, Total Gate Charge [nC]
4
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600V N-Channel MOSFET REV. A
600V N-Ch
annel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250
A
BV
DSS
, (N
orma
li
z
e
d
)
Dr
ai
n
-
S
o
ur
ce
B
r
ea
k
d
o
w
n
V
o
l
t
age
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
GS
= 10 V
2. I
D
= 1.5 A
R
DS
(
O
N)
,
(
N
or
m
a
lized)
Dr
ain
-
So
ur
c
e
O
n
-
R
es
ist
anc
e
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10 us
Operation in This Area
is Limited by R
DS(on)
DC
10 ms
1 ms
100 us
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
, Drain Current
[
A
]
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
1
2
3
I
D
,
Dr
ain
Cu
r
r
e
n
t
[
A
]
T
C
, Case Temperature [ ]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
10
1
1 0
-2
1 0
-1
1 0
0
N o te s :
1 . Z
JC
(t) = 1 .4
/W M a x.
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
JM
- T
C
= P
D M
* Z
JC
(t)
single pulse
D = 0.5
0.02
0.2
0.05
0.1
0.01
Z
JC
(t
),
Th
e
r
m
a
l
R
e
s
p
o
n
s
e
t
1
, S q u a re W a ve P u lse D u ra tio n [se c]
t
1
P
DM
t
2
5
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600V N-Channel MOSFET REV. A
600V N-Ch
annel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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