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2003 Fairchild Semiconductor Corporation
Rev. A, October 2003
FQB8N60C / FQI
8
N60C
QFET
TM
FQB8N60C / FQI8N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
7.5A, 600V, R
DS(on)
= 1.2
@V
GS
= 10 V
Low gate charge ( typical 28 nC)
Low Crss ( typical 12 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25C unless otherwise noted
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
Symbol
Parameter
FQB8N60C / FQI8N60C
Units
V
DSS
Drain-Source Voltage
600
V
I
D
Drain Current
- Continuous (T
C
= 25C)
7.5
A
- Continuous (T
C
= 100C)
4.6
A
I
DM
Drain Current
- Pulsed
(Note 1)
30
A
V
GSS
Gate-Source Voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
230
mJ
I
AR
Avalanche Current
(Note 1)
7.5
A
E
AR
Repetitive Avalanche Energy
(Note 1)
14.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation (T
A
= 25C)*
3.13
W
Power Dissipation (T
C
= 25C)
147
W
- Derate above 25C
1.18
W/C
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +150
C
T
L
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
300
C
Symbol
Parameter
Typ
Max
Units
R
JC
Thermal Resistance, Junction-to-Case
--
0.85
C
/
W
R
JA
Thermal Resistance, Junction-to-Ambient*
--
40
C
/
W
R
JA
Thermal Resistance, Junction-to-Ambient
--
62.5
C
/
W
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S
D
G
D
2
-PAK
FQB Series
I
2
-PAK
FQI Series
G
S
D
G
S
D
Rev. A, October 2003
2003 Fairchild Semiconductor Corporation
FQB8N60C / FQI
8
N60C
Electrical Characteristics
T
C
= 25C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 7.3mH, I
AS
= 7.5 A, V
DD
= 50V, R
G
= 25
,
Starting T
J
= 25C
3. I
SD
7.5A, di/dt
200A/
s, V
DD
BV
DSS,
Starting T
J
= 25C
4. Pulse Test : Pulse width
300
s, Duty cycle
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
A
600
--
--
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25C
--
0.7
--
V/C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 600 V, V
GS
= 0 V
--
--
1
A
V
DS
= 480 V, T
C
= 125C
--
--
10
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30 V, V
DS
= 0 V
--
--
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30 V, V
DS
= 0 V
--
--
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
2.0
--
4.0
V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 3.75 A
--
1.0
1.2
g
FS
Forward Transconductance
V
DS
= 40 V, I
D
= 3.75 A
(Note 4)
--
8.7
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
965
1255
pF
C
oss
Output Capacitance
--
105
135
pF
C
rss
Reverse Transfer Capacitance
--
12
16
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 300 V, I
D
= 7.5A,
R
G
= 25
(Note 4, 5)
--
16.5
45
ns
t
r
Turn-On Rise Time
--
60.5
130
ns
t
d(off)
Turn-Off Delay Time
--
81
170
ns
t
f
Turn-Off Fall Time
--
64.5
140
ns
Q
g
Total Gate Charge
V
DS
= 480 V, I
D
= 7.5A,
V
GS
= 10 V
(Note 4, 5)
--
28
36
nC
Q
gs
Gate-Source Charge
--
4.5
--
nC
Q
gd
Gate-Drain Charge
--
12
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
7.5
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
30
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 7.5 A
--
--
1.4
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 7.5 A,
dI
F
/ dt = 100 A/
s
(Note 4)
--
365
--
ns
Q
rr
Reverse Recovery Charge
--
3.4
--
C
Rev. A, October 2003
2003 Fairchild Semiconductor Corporation
FQB8N60C / FQI
8
N60C
0
5
10
15
20
25
30
0
2
4
6
8
10
12
V
DS
= 300V
V
DS
= 120V
V
DS
= 480V
Note : I
D
= 8A
V
GS
, G
a
te
-
S
o
u
r
c
e
V
o
lta
g
e
[V
]
Q
G
, Total Gate Charge [nC]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
10
1
150
Notes :
1. V
GS
= 0V
2. 250
s Pulse Test
25
I
DR
,
R
e
ver
s
e
D
r
ai
n C
u
r
r
e
nt
[
A
]
V
SD
, Source-Drain voltage [V]
0
5
10
15
20
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
DS
(
O
N)
[
],
D
r
ai
n
-
S
o
u
r
ce O
n
-
R
esi
s
t
a
nce
I
D
, Drain Current [A]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Notes :
1. 250
s Pulse Test
2. T
C
= 25
I
D
,
D
r
ai
n C
u
r
r
ent
[
A
]
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
150
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 40V
2. 250
s Pulse Test
I
D
,
D
r
ai
n C
u
r
r
ent
[
A
]
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
0
200
400
600
800
1000
1200
1400
1600
1800
2000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
a
pa
ci
t
a
nc
e [
p
F
]
V
DS
, Drain-Source Voltage [V]
Rev. A, October 2003
2003 Fairchild Semiconductor Corporation
FQB8N60C / FQI
8
N60C
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
100 ms
1 ms
10
s
DC
10 ms
100
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
,
D
r
ai
n C
u
r
r
ent
[
A
]
V
DS
, Drain-Source Voltage [V]
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250
A
BV
DS
S
,
(
N
or
m
a
l
i
z
ed
)
D
r
a
i
n-
S
o
u
r
ce B
r
ea
kdow
n V
o
l
t
ag
e
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
GS
= 10 V
2. I
D
= 4 A
R
DS
(
O
N
)
,
(
N
o
r
m
a
liz
e
d
)
D
r
ai
n-
S
o
ur
c
e
O
n
-
R
esi
s
t
anc
e
T
J
, Junction Temperature [
o
C]
25
50
75
100
125
150
0
2
4
6
8
I
D
, D
r
a
i
n
C
u
r
r
e
n
t [A
]
T
C
, Case Temperature [
]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N o te s :
1 . Z
J C
(t) = 0 .8 5
/W M a x .
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
J C
(t)
s in g le p u ls e
D = 0 .5
0 . 0 2
0 . 2
0 . 0 5
0 . 1
0 . 0 1
Z
JC
(t), T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
t
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
Figure 8. On-Resistance Variation
vs Temperature
Rev. A, October 2003
2003 Fairchild Semiconductor Corporation
FQB8N60C / FQI
8
N60C
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
E
AS
=
L I
AS
2
----
2
1
--------------------
BV
DSS
- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V
DUT
R
G
L
I
D
t
p
E
AS
=
L I
AS
2
----
2
1
E
AS
=
L I
AS
2
----
2
1
----
2
1
--------------------
BV
DSS
- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V
DUT
R
G
L
L
I
D
I
D
t
p
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