2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQD6N60C Rev. A
FQD
6
N
60C
60
0V N-
C
h
anne
l
M
O
SFE
T
QFET
FQD6N60C
600V N-Channel MOSFET
Features
4 A, 600 V, R
DS(on)
= 2.0
@ V
GS
= 10 V
Low gate charge ( typical 16 nC )
Low Crss ( typical 7 pF)
Fast switching
100 % avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.
Absolute Maximum Ratings
Thermal Characteristics
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S
D
G
D-PAK
FQD Series
G
S
D
Symbol
Parameter
FQD6N60C
Units
V
DSS
Drain-Source Voltage
600
V
I
D
Drain Current
- Continuous (T
C
= 25C)
4
A
- Continuous (T
C
= 100C)
2.4
A
I
DM
Drain Current
- Pulsed
(Note 1)
16
A
V
GSS
Gate-Source Voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
300
mJ
I
AR
Avalanche Current
(Note 1)
4.0
A
E
AR
Repetitive Avalanche Energy
(Note 1)
8.0
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation (T
C
= 25C)
80
W
- Derate above 25C
0.78
W/C
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +150
C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
C
Symbol
Parameter
Typ
Max
Units
R
JC
Thermal Resistance, Junction-to-Case
--
1.56
C/W
R
JA
Thermal Resistance, Junction-to-Ambient *
--
50
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
--
110
C/W
* When mounted on the minimum pad size recommended (PCB Mount)
2
www.fairchildsemi.com
FQD6N60C Rev. A
FQD
6
N
60C
60
0V N-
C
h
anne
l
M
O
SFE
T
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 34.3 mH, I
AS
= 4.0 A, V
DD
= 50V, R
G
= 25
,
Starting T
J
= 25C
3. I
SD
4.0 A, di/dt
200A/
s, V
DD
BV
DSS,
Starting T
J
= 25C
4. Pulse Test : Pulse width
300
s, Duty cycle
2%
5. Essentially independent of operating temperature
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQD6N60C
FQD6N60CTM
DPAK
380mm
16mm
2500
FQD6N60C
FQD6N60CTF
DPAK
380mm
16mm
2000
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
A
600
--
--
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25C
--
0.6
--
V/C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 600 V, V
GS
= 0 V
--
--
1
A
V
DS
= 480 V, T
C
= 125C
--
--
10
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30 V, V
DS
= 0 V
--
--
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30 V, V
DS
= 0 V
--
--
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
2.0
--
4.0
V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 2.0 A
--
1.7
2.0
g
FS
Forward Transconductance
V
DS
= 40 V, I
D
= 2.0 A
(Note 4)
--
4.8
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
620
810
pF
C
oss
Output Capacitance
--
65
85
pF
C
rss
Reverse Transfer Capacitance
--
7
10
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 300 V, I
D
= 5.5 A,
R
G
= 25
(Note 4, 5)
--
15
40
ns
t
r
Turn-On Rise Time
--
45
100
ns
t
d(off)
Turn-Off Delay Time
--
45
100
ns
t
f
Turn-Off Fall Time
--
45
100
ns
Q
g
Total Gate Charge
V
DS
= 480 V, I
D
= 5.5 A,
V
GS
= 10 V
(Note 4, 5)
--
16
20
nC
Q
gs
Gate-Source Charge
--
3.5
--
nC
Q
gd
Gate-Drain Charge
--
6.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
4.0
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
16
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 4.0 A
--
--
1.4
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 5.5 A,
dI
F
/ dt = 100 A/
s
(Note 4)
--
310
--
ns
Q
rr
Reverse Recovery Charge
--
2.1
--
C
3
www.fairchildsemi.com
FQD6N60C Rev. A
FQD
6
N
60C
60
0V N-
C
h
anne
l
M
O
SFE
T
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage
Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
-2
10
-1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Notes :
1. 250 s Pulse Test
2. T
C
= 25
I
D
,
D
r
ai
n C
u
r
r
ent
[
A
]
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
150
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 40V
2. 250 s Pulse Test
I
D
,
D
r
ai
n C
u
r
r
ent
[
A
]
V
GS
, Gate-Source Voltage [V]
0
2
4
6
8
10
12
14
0
1
2
3
4
5
6
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
DS
(
O
N)
[
],
Drai
n-Sou
r
ce On-Resi
s
tanc
e
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
10
-1
10
0
10
1
150
Notes :
1. V
GS
= 0V
2. 250 s Pulse Test
25
I
DR
,
Revers
e Drai
n Cu
rrent
[A]
V
SD
, Source-Drain voltage [V]
10
-1
10
0
10
1
0
200
400
600
800
1000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Note ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Ca
pacitanc
es [pF
]
V
DS
, Drain-Source Voltage [V]
0
4
8
12
16
0
2
4
6
8
10
12
V
DS
= 300V
V
DS
= 120V
V
DS
= 480V
Note : I
D
= 5.5A
V
GS
,
G
a
te-
S
ource Vo
lt
age [V]
Q
G
, Total Gate Charge [nC]
4
www.fairchildsemi.com
FQD6N60C Rev. A
FQD
6
N
60C
60
0V N-
C
h
anne
l
M
O
SFE
T
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250 A
BV
DSS
, (No
r
m
a
li
ze
d
)
Dra
i
n
-
S
o
ur
c
e
B
r
ea
k
d
o
w
n
V
o
l
t
age
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
GS
= 10 V
2. I
D
= 2.0 A
R
DS
(
O
N)
, (N
or
ma
liz
ed)
Drai
n
-Source On-Resi
stance
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
10
s
DC
10 ms
1 ms
100
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
,
Drai
n
Cur
r
en
t [
A
]
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0.0
1.5
3.0
4.5
I
D
,
D
r
a
i
n Cu
r
r
en
t
[
A
]
T
C
, Case Temperature [ ]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N o te s :
1 . Z
J C
( t) = 1 .5 6
/W M a x .
2 . D u ty F a c to r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
J C
( t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
JC
(t), Therm
a
l
Res
p
o
n
s
e
t
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
5
www.fairchildsemi.com
FQD6N60C Rev. A
FQD
6
N
60C
60
0V N-
C
h
anne
l
M
O
SFE
T
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
E
AS
=
L I
AS
2
----
2
1
--------------------
BV
DSS
- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V
DUT
R
G
L
I
D
t
p
E
AS
=
L I
AS
2
----
2
1
E
AS
=
L I
AS
2
----
2
1
----
2
1
--------------------
BV
DSS
- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V
DUT
R
G
L
L
I
D
I
D
t
p
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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