2000 Fairchild Semiconductor International
September 2000
Rev. A, September 2000
FQ
B3N80 /
FQ
I
3
N
8
0
QFET
TM
FQB3N80 / FQI3N80
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Features
3.0A, 800V, R
DS(on)
= 5.0
@V
GS
= 10 V
Low gate charge ( typical 15 nC)
Low Crss ( typical 7.0 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
FQB3N80 / FQI3N80
Units
V
DSS
Drain-Source Voltage
800
V
I
D
Drain Current
- Continuous (T
C
= 25C)
3.0
A
- Continuous (T
C
= 100C)
1.9
A
I
DM
Drain Current
- Pulsed
(Note 1)
12
A
V
GSS
Gate-Source Voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
320
mJ
I
AR
Avalanche Current
(Note 1)
3.0
A
E
AR
Repetitive Avalanche Energy
(Note 1)
10.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.0
V/ns
P
D
Power Dissipation (T
A
= 25C) *
3.13
W
Power Dissipation (T
C
= 25C)
107
W
- Derate above 25C
0.85
W/C
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +150
C
T
L
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
300
C
Symbol
Parameter
Typ
Max
Units
R
JC
Thermal Resistance, Junction-to-Case
--
1.17
C
/
W
R
JA
Thermal Resistance, Junction-to-Ambient *
--
40
C
/
W
R
JA
Thermal Resistance, Junction-to-Ambient
--
62.5
C
/
W
* When mounted on the minimum pad size recommended (PCB Mount)
3 5
!
!
!
"
"
"
3 5
!
!
!
"
"
"
S
D
G
D
2
-PAK
FQB Series
I
2
-PAK
FQI Series
G
S
D
G
S
D
Rev. A, September 2000
FQB3N80 /
FQI3N80
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
2000 Fairchild Semiconductor International
Electrical Characteristics
T
C
= 25C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 67mH, I
AS
= 3.0A, V
DD
= 50V, R
G
= 25
,
Starting T
J
= 25C
3. I
SD
3.0A, di/dt
200A/
s, V
DD
BV
DSS,
Starting T
J
= 25C
4. Pulse Test : Pulse width
300
s, Duty cycle
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
A
800
--
--
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25C
--
0.9
--
V/C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 800 V, V
GS
= 0 V
--
--
10
A
V
DS
= 640 V, T
C
= 125C
--
--
100
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30 V, V
DS
= 0 V
--
--
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30 V, V
DS
= 0 V
--
--
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
3.0
--
5.0
V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 1.5 A
--
3.8
5.0
g
FS
Forward Transconductance
V
DS
= 50 V, I
D
= 1.5 A
--
2.85
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
530
690
pF
C
oss
Output Capacitance
--
57
75
pF
C
rss
Reverse Transfer Capacitance
--
7.0
9.0
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 400 V, I
D
= 3.0 A,
R
G
= 25
--
15
40
ns
t
r
Turn-On Rise Time
--
40
90
ns
t
d(off)
Turn-Off Delay Time
--
30
70
ns
t
f
Turn-Off Fall Time
--
30
70
ns
Q
g
Total Gate Charge
V
DS
= 640 V, I
D
= 3.0 A,
V
GS
= 10 V
--
15
19
nC
Q
gs
Gate-Source Charge
--
3.5
--
nC
Q
gd
Gate-Drain Charge
--
7.7
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
3.0
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
12
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 3.0 A
--
--
1.4
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 3.0 A,
dI
F
/ dt = 100 A/
s
--
530
--
ns
Q
rr
Reverse Recovery Charge
--
2.8
--
C
FQ
B3N80 /
FQ
I
3
N
8
0
Rev. A, September 2000
2000 Fairchild Semiconductor International
0.2
0.4
0.6
0.8
1.0
1.2
10
-1
10
0
10
1
150
Notes :
1. V
GS
= 0V
2. 250
s Pulse Test
25
I
DR
,
R
e
ver
s
e
D
r
ai
n C
u
r
r
e
nt
[
A
]
V
SD
, Source-Drain voltage [V]
0
2
4
6
8
2
4
6
8
10
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
DS
(
O
N
)
[
],
D
r
ai
n-
Sour
c
e
O
n
-
R
e
s
i
s
t
a
nc
e
I
D
, Drain Current [A]
2
4
6
8
10
10
-1
10
0
10
1
150
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 50V
2. 250
s Pulse Test
I
D
,
D
r
ai
n C
u
r
r
ent
[
A
]
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-2
10
-1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Notes :
1. 250
s Pulse Test
2. T
C
= 25
I
D
,
D
r
ai
n
C
u
r
r
e
nt
[
A
]
V
DS
, Drain-Source Voltage [V]
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
V
DS
= 400V
V
DS
= 160V
V
DS
= 640V
Note : I
D
= 3.0A
V
GS
,
G
a
t
e
-
S
our
c
e
V
o
l
t
ag
e [
V
]
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
100
200
300
400
500
600
700
800
900
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
a
pa
ci
t
a
n
c
e [
p
F
]
V
DS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
2000 Fairchild Semiconductor International
FQB3N80 /
FQI3N80
Rev. A, September 2000
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N o te s :
1 . Z
J C
( t) = 1 .1 7
/ W M a x .
2 . D u ty F a c to r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
J C
( t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
JC
(
t
)
,
T
her
m
a
l
R
e
s
p
on
s
e
t
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
[
A
]
T
C
, Case Temperature [
]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
DC
10 ms
1 ms
100
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
,
D
r
ai
n C
u
r
r
ent
[
A
]
V
DS
, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
GS
= 10 V
2. I
D
= 1.5 A
R
DS
(
O
N)
,
(
N
or
m
a
l
i
z
e
d)
D
r
ai
n-
S
o
ur
c
e
O
n
-
R
es
i
s
t
a
nc
e
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250
A
BV
DSS
, (
N
o
r
m
a
liz
e
d
)
D
r
ai
n-
S
o
u
r
ce B
r
eak
d
o
w
n
V
o
l
t
age
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
FQ
B3N80 /
FQ
I
3
N
8
0
Rev. A, September 2000
2000 Fairchild Semiconductor International
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
E
AS
=
L I
AS
2
----
2
1
--------------------
BV
DSS
- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V
DUT
R
G
L
I
D
t
p
E
AS
=
L I
AS
2
----
2
1
E
AS
=
L I
AS
2
----
2
1
----
2
1
--------------------
BV
DSS
- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V
DUT
R
G
L
L
I
D
I
D
t
p
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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