April 2000

Rev. A, April 2000

B6N60 /

I
6
N

6
0

QFET

FQB6N60 / FQI6N60

600V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.

Features

· 6.2A, 600V, R

DS(on)

= 1.5

= 10 V

· Low gate charge ( typical 20 nC)
· Low Crss ( typical 10 pF)
· Fast switching
· 100% avalanche tested
· Improved dv/dt capability

! "

Absolute Maximum Ratings

= 25°C unless otherwise noted

Thermal Characteristics

Symbol

Parameter

FQB6N60 / FQI6N60

Units

DSS

Drain-Source Voltage

600

Drain Current

- Continuous (T

= 25°C)

6.2

- Continuous (T

= 100°C)

3.9

Drain Current

- Pulsed

(Note 1)

24.8

GSS

Gate-Source Voltage

Single Pulsed Avalanche Energy

(Note 2)

440

Avalanche Current

(Note 1)

6.2

Repetitive Avalanche Energy

(Note 1)

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

Power Dissipation (T

= 25°C) *

3.13

Power Dissipation (T

= 25°C)

130

- Derate above 25°C

1.04

W/°C

, T

STG

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,
1/8

from case for 5 seconds

300

°C

Symbol

Parameter

Typ

Max

Units

Thermal Resistance, Junction-to-Case

0.96

°C

Thermal Resistance, Junction-to-Ambient *

°C

Thermal Resistance, Junction-to-Ambient

62.5

°C

* When mounted on the minimum pad size recommended (PCB Mount)

-PAK

FQB Series

-PAK

FQI Series

FQB6N60 /

FQI6N60

(Note 4)

(Note 4, 5)

(Note 4)

Rev. A, April 2000

Electrical Characteristics

= 25°C unless otherwise noted

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 21mH, I

= 6.2A, V

= 50V, R

= 25

Starting T

= 25°C

3. I

6.2A, di/dt

200A/

s, V

DSS,

Starting T

= 25°C

4. Pulse Test : Pulse width

300

s, Duty cycle

5. Essentially independent of operating temperature

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

DSS

Drain-Source Breakdown Voltage

= 0 V, I

= 250

600

DSS

Breakdown Voltage Temperature
Coefficient

= 250

A, Referenced to 25°C

0.53

V/°C

DSS

Zero Gate Voltage Drain Current

= 600 V, V

= 0 V

= 480 V, T

= 125°C

100

GSSF

Gate-Body Leakage Current, Forward

= 30 V, V

= 0 V

100

GSSR

Gate-Body Leakage Current, Reverse

= -30 V, V

= 0 V

-100

On Characteristics

GS(th)

Gate Threshold Voltage

= V

, I

= 250

3.0

5.0

DS(on)

Static Drain-Source
On-Resistance

= 10 V, I

= 3.1 A

1.2

1.5

Forward Transconductance

= 50 V, I

= 3.1 A

6.0

Dynamic Characteristics

iss

Input Capacitance

= 25 V, V

= 0 V,

f = 1.0 MHz

770

1000

oss

Output Capacitance

120

rss

Reverse Transfer Capacitance

Switching Characteristics

d(on)

Turn-On Delay Time

= 300 V, I

= 6.2 A,

= 25

Turn-On Rise Time

150

d(off)

Turn-Off Delay Time

Turn-Off Fall Time

100

Total Gate Charge

= 480 V, I

= 6.2 A,

= 10 V

Gate-Source Charge

4.9

Gate-Drain Charge

9.4

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

6.2

Maximum Pulsed Drain-Source Diode Forward Current

24.8

Drain-Source Diode Forward Voltage

= 0 V, I

= 6.2 A

1.4

Reverse Recovery Time

= 0 V, I

= 6.2 A,

/ dt = 100 A/

290

Reverse Recovery Charge

2.35

B6N60 /

I
6
N

6
0

Rev. A, April 2000

= 300V

= 120V

= 480V

Note : I

= 6.2 A

,
G

a
t
e
-
S

our

Vol

t
ag

[
V

]

, Total Gate Charge [nC]

-1

200

400

600

800

1000

1200

1400

iss

= C

+ C

= shorted)

oss

= C

+ C

rss

= C

Notes :

1. V

= 0 V

2. f = 1 MHz

rss

oss

iss

a
pa

c
i
t
a
n
c
e [

p
F]

, Drain-Source Voltage [V]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-1

150

Notes :

1. V

= 0V

2. 250

s Pulse Test

,
R

e
v
e
r
s
e D

r
ai

n C

u
r
r
e
n
t
[

A
]

, Source-Drain Voltage [V]

= 20V

= 10V

Note : T

= 25

(
O

)

[

r
ai

Sour

c
e
O

n
-
R

i
s
t
a
nc

, Drain Current [A]

-1

Notes :

1. V

= 50V

2. 250

s Pulse Test

-55

150

, D

r
a
i
n
C

u
rre

n
t
[A

]

, Gate-Source Voltage [V]

-1

Notes :

1. 250

s Pulse Test

2. T

= 25

Top : 15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V

r
a
i
n
C

u
rr
e
n
t [A

]

, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

FQB6N60 /

FQI6N60

Rev. A, April 2000

1 0

-5

1 0

-4

1 0

-3

1 0

-2

1 0

-1

1 0

-2

1 0

-1

1 0

N o te s :

1 . Z

J C

( t ) = 0 . 9 6

/W M a x .

2 . D u ty F a c t o r , D = t

3 . T

J M

- T

= P

D M

* Z

J C

( t )

s in g le p u ls e

D = 0 . 5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

(
t
)
,
T

l

R

pon

, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

100

125

150

,
Dr

a
i
n
Cu

r
r
e
n
t
[
A

]

, Case Temperature [

]

-1

10 ms

1 ms

100

Operation in This Area
is Limited by R

DS(on)

Notes :

1. T

= 25

2. T

= 150

3. Single Pulse

, D

r
a
i
n
C

u
r
r
e
n
t [A

]

, Drain-Source Voltage [V]

-100

-50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes :

1. V

= 10 V

2. I

= 3.1 A

(
O

)

,
(
N

a
l
i
z
ed)

r
ai

S
our

ce O

n
-
R

esi

s
t
a
nce

, Junction Temperature [

-100

-50

100

150

200

0.8

0.9

1.0

1.1

1.2

Notes :

1. V

= 0 V

2. I

= 250

,
(
N

o
r
m

a
liz

e
d
)

r
a
i
n-

S
o
ur

c
e
B

r
ea

k
d
o
w

n V

o
l
t
ag

, Junction Temperature [

Typical Characteristics

(Continued)

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Transient Thermal Response Curve

B6N60 /

I
6
N

6
0

Rev. A, April 2000

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

Charge

10V

3mA

DUT

300nF

50K

200nF

12V

Same Type

as DUT

Charge

10V

3mA

DUT

300nF

50K

200nF

12V

Same Type

as DUT

10%

90%

d(on)

off

d(off)

10V

DUT

10%

90%

d(on)

off

d(off)

10V

DUT

L I

----

--------------------

DSS

- V

DSS

(t)

Time

10V

DUT

L I

----

L I

----

--------------------

DSS

- V

DSS

(t)

Time

10V

DUT

L
L

FQB6N60 /

FQI6N60

Rev. A, April 2000

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

Driver

Same Type

as DUT

· dv/dt controlled by R

· I

controlled by pulse period

10V

( Driver )

( DUT )

Body Diode

Forward Voltage Drop

, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

di/dt

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

DUT

Driver

Same Type

as DUT

· dv/dt controlled by R

· I

controlled by pulse period

L
L

10V

( Driver )

( DUT )

Body Diode

Forward Voltage Drop

, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

di/dt

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

B6N60 /

I
6
N

6
0

Rev. A, April 2000

Package Dimensions

10.00

0.20

10.00

0.20

(8.00)

(4.40)

1.27

0.10

0.80

0.10

0.80

0.10

(2XR0.45)

9.90

0.20

4.50

0.20

0.10

0.15

2.40

0.20

2.54

0.30

15.30

0.30

9.20

0.20

4.90

0.20

1.40

0.20

2.00

0.10

(0.75)

(1.75)

(7.20)

1.20

0.20

9.20

0.20

15.30

0.30

4.90

0.20

(0.40)

2.54 TYP

1.30

+0.10
0.05

0.50

+0.10
0.05

PAK

Rev. A, January 2000

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACExTM
BottomlessTM
CoolFETTM
CROSSVOLTTM
E

CMOSTM

FACTTM
FACT Quiet SeriesTM
FAST

FASTrTM
GTOTM

HiSeCTM
ISOPLANARTM
MICROWIRETM
POPTM
PowerTrench

QFETTM
QSTM
Quiet SeriesTM
SuperSOTTM-3
SuperSOTTM-6

SuperSOTTM-8
SyncFETTM
TinyLogicTM
UHCTM
VCXTM

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to

result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: FQI6N60

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: FQI6N60