2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
FQP
15P12/
FQPF15P
12
QFET
FQP15P12/FQPF15P12
120V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
-15A, -120V, R
DS(on)
= 0.2
@V
GS
= -10 V
Low gate charge ( typical 29 nC)
Low Crss ( typical 110 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175
C maximum junction temperature rating
Absolute Maximum Ratings
T
C
= 25C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FQP15P12
FQPF15P12
Units
V
DSS
Drain-Source Voltage
-120
V
I
D
Drain Current
- Continuous (T
C
= 25C)
-15
-15 *
A
- Continuous (T
C
= 100C)
-10.6
-10.6 *
A
I
DM
Drain Current
- Pulsed
(Note 1)
-60
-60 *
A
V
GSS
Gate-Source Voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
1157
mJ
I
AR
Avalanche Current
(Note 1)
-15
A
E
AR
Repetitive Avalanche Energy
(Note 1)
10
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
-5.0
V/ns
P
D
Power Dissipation (T
C
= 25C)
100
41
W
- Derate above 25C
0.67
0.27
W/C
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +175
C
T
L
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
300
C
Symbol
Parameter
FQP15P12
FQPF15P12
Units
R
JC
Thermal Resistance, Junction-to-Case
1.5
3.66
C
/
W
R
JS
Thermal Resistance, Case-to-Sink Typ.
40
--
C
/
W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
C
/
W
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
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S
D
G
Rev. A, December 2003
2003 Fairchild Semiconductor Corporation
FQP
15P12/
FQPF15P
12
Electrical Characteristics
T
C
= 25C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 6.0mH, I
AS
= -15A, V
DD
= -50V, R
G
= 25
,
Starting T
J
= 25C
3. I
SD
-15A, di/dt
300A/
s, V
DD
BV
DSS,
Starting T
J
= 25C
4. Pulse Test : Pulse width
300
s, Duty cycle
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
A
-120
--
--
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= -250
A, Referenced to 25C
--
-0.13
--
V/C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -120 V, V
GS
= 0 V
--
--
-1
A
V
DS
= -96 V, T
C
= 150C
--
--
-10
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= -30 V, V
DS
= 0 V
--
--
-100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= 30 V, V
DS
= 0 V
--
--
100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250
A
-2.0
--
-4.0
V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= -10 V, I
D
= -7.5 A
--
0.17
0.2
g
FS
Forward Transconductance
V
DS
= -40 V, I
D
= -7.5 A
(Note 4)
--
9.5
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
--
850
1100
pF
C
oss
Output Capacitance
--
310
400
pF
C
rss
Reverse Transfer Capacitance
--
110
140
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= -60 V, I
D
= -15 A,
R
G
= 25
(Note 4, 5)
--
15
40
ns
t
r
Turn-On Rise Time
--
100
210
ns
t
d(off)
Turn-Off Delay Time
--
80
170
ns
t
f
Turn-Off Fall Time
--
80
170
ns
Q
g
Total Gate Charge
V
DS
= -96 V, I
D
= -15 A,
V
GS
= -10 V
(Note 4, 5)
--
29
38
nC
Q
gs
Gate-Source Charge
--
5.1
--
nC
Q
gd
Gate-Drain Charge
--
15
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
-15
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
-60
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -15 A
--
--
-4.0
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= -15 A,
dI
F
/ dt = 100 A/
s
(Note 4)
--
126
--
ns
Q
rr
Reverse Recovery Charge
--
0.61
--
C
Rev. A, December 2003
2003 Fairchild Semiconductor Corporation
FQP
15P12/
FQPF15P
12
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
-1
10
0
10
1
10
2
V
GS
Top : -15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
Bottom : -4.5 V
Notes :
1. 250
s Pulse Test
2. T
C
= 25
-I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
[
A
]
-V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
10
2
175
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= -40V
2. 250
s Pulse Test
-I
D
,
D
r
a
i
n C
u
r
r
ent
[
A
]
-V
GS
, Gate-Source Voltage [V]
0
20
40
60
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
GS
= -20V
V
GS
= -10V
Note : T
J
= 25
R
DS
(
O
N)
[
],
D
r
ai
n-
S
our
c
e
O
n
-
R
es
i
s
t
anc
e
-I
D
, Drain Current [A]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10
-1
10
0
10
1
175
Notes :
1. V
GS
= 0V
2. 250
s Pulse Test
25
-I
DR
,
R
e
v
e
r
s
e D
r
ai
n C
u
r
r
e
nt
[
A
]
-V
SD
, Source-Drain voltage [V]
10
-1
10
0
10
1
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
a
pac
i
t
a
n
c
e
[
p
F]
-V
DS
, Drain-Source Voltage [V]
0
10
20
30
40
0
2
4
6
8
10
12
V
DS
= -60V
V
DS
= -30V
V
DS
= -96V
Note : I
D
= -15A
-V
GS
, G
a
te
-S
o
u
r
c
e
V
o
lt
a
g
e
[V
]
Q
G
, Total Gate Charge [nC]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
Rev. A, December 2003
2003 Fairchild Semiconductor Corporation
FQP
15P12/
FQPF15P
12
Typical Characteristics
(Continued)
Figure 9-1. Maximum Safe Operating Area
for FQP15P12
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9-2. Maximum Safe Operating Area
for FQPF15P12
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= -250
A
-B
V
DS
S
,
(
N
or
m
a
l
i
z
ed
)
D
r
a
i
n-
S
o
ur
ce
B
r
ea
k
d
o
w
n
V
o
l
t
age
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
GS
= -10 V
2. I
D
= -7.5 A
R
DS
(
O
N
)
,
(
N
or
m
a
l
i
ze
d)
D
r
ai
n-
S
o
ur
ce
O
n
-
R
esi
s
t
a
nce
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
DC
10 ms
1 ms
100
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 175
o
C
3. Single Pulse
-I
D
,
D
r
ai
n
C
u
r
r
ent
[
A
]
-V
DS
, Drain-Source Voltage [V]
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
DC
10 ms
1 ms
100
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 175
o
C
3. Single Pulse
-I
D
,
D
r
ai
n C
u
r
r
en
t
[
A
]
-V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
175
0
5
10
15
20
-I
D
,
D
r
a
i
n
C
u
rr
e
n
t [A
]
T
C
, Case Temperature [
]
Rev. A, December 2003
2003 Fairchild Semiconductor Corporation
FQP
15P12/
FQPF15P
12
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N o te s :
1 . Z
J C
(t) = 3 .6 6
/W M a x.
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
JM
- T
C
= P
D M
* Z
J C
(t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
JC
(
t
)
,
T
her
m
a
l
R
e
sp
ons
e
t
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N o te s :
1 . Z
J C
( t) = 1 .5
/W M a x .
2 . D u ty F a c to r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
J C
( t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
JC
(
t
)
,
T
her
m
a
l
R
e
s
ponse
t
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Typical Characteristics
(Continued)
Figure 11-1. Transient Thermal Response Curve for FQP15P12
Figure 11-2. Transient Thermal Response Curve for FQPF15P12
t
1
P
DM
t
2
t
1
P
DM
t
2
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