2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
FQP19N20C/FQPF19N20C
QFET
FQP19N20C/FQPF19N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supplies and motor controls.
Features
19.0A, 200V, R
DS(on)
= 0.17
@V
GS
= 10 V
Low gate charge ( typical 40.5 nC)
Low Crss ( typical 85 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FQP19N20C
FQPF19N20C
Units
V
DSS
Drain-Source Voltage
200
V
I
D
Drain Current
- Continuous (T
C
= 25C)
19.0
19.0 *
A
- Continuous (T
C
= 100C)
12.1
12.1 *
A
I
DM
Drain Current
- Pulsed
(Note 1)
76.0
76.0 *
A
V
GSS
Gate-Source Voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
433
mJ
I
AR
Avalanche Current
(Note 1)
19.0
A
E
AR
Repetitive Avalanche Energy
(Note 1)
13.9
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
V/ns
P
D
Power Dissipation (T
C
= 25C)
139
43
W
- Derate above 25C
1.11
0.34
W/C
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +150
C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
C
Symbol
Parameter
FQP19N20C
FQPF19N20C
Units
R
JC
Thermal Resistance, Junction-to-Case
0.9
2.89
C/W
R
JS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
C/W
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
S
D
G
Rev. A, March 2004
FQP19N20C/FQPF19N20C
2004 Fairchild Semiconductor Corporation
Electrical Characteristics
T
C
= 25C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.8mH, I
AS
= 19.0A, V
DD
= 50V, R
G
= 25
, Starting T
J
= 25C
3. I
SD
19.0A, di/dt 300A/s, V
DD
BV
DSS,
Starting T
J
= 25C
4. Pulse Test : Pulse width
300s, Duty cycle 2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
A
200
--
--
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25C
--
0.24
--
V/C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 200 V, V
GS
= 0 V
--
--
10
A
V
DS
= 160 V, T
C
= 125C
--
--
100
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30 V, V
DS
= 0 V
--
--
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30 V, V
DS
= 0 V
--
--
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
2.0
--
4.0
V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 9.5 A
--
0.14
0.17
g
FS
Forward Transconductance
V
DS
= 40 V, I
D
= 9.5 A
(Note 4)
--
10.8
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
830
1080
pF
C
oss
Output Capacitance
--
195
255
pF
C
rss
Reverse Transfer Capacitance
--
85
110
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 100 V, I
D
= 19.0 A,
R
G
= 25
(Note 4, 5)
--
15
40
ns
t
r
Turn-On Rise Time
--
150
310
ns
t
d(off)
Turn-Off Delay Time
--
135
280
ns
t
f
Turn-Off Fall Time
--
115
240
ns
Q
g
Total Gate Charge
V
DS
= 160 V, I
D
= 19.0 A,
V
GS
= 10 V
(Note 4, 5)
--
40.5
53.0
nC
Q
gs
Gate-Source Charge
--
6.0
--
nC
Q
gd
Gate-Drain Charge
--
22.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
19.0
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
76.0
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 19.0 A
--
--
1.5
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 19.0 A,
dI
F
/ dt = 100 A/
s
(Note 4)
--
208
--
ns
Q
rr
Reverse Recovery Charge
--
1.63
--
C
Rev. A, March 2004
2004 Fairchild Semiconductor Corporation
FQP19N20C/FQPF19N20C
0
10
20
30
40
50
0
2
4
6
8
10
12
V
DS
= 100V
V
DS
= 40V
V
DS
= 160V
Note : I
D
= 19.0A
V
GS
,
G
a
t
e
-
S
our
c
e
Vo
lt
ag
e [
V
]
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
3000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Ca
paci
t
an
ce [
p
F]
V
DS
, Drain-Source Voltage [V]
0.0
0.4
0.8
1.2
1.6
2.0
2.4
10
-1
10
0
10
1
150
Notes :
1. V
GS
= 0V
2. 250 s Pulse Test
25
I
DR
,
Rev
e
r
s
e Dr
ai
n Cur
r
ent
[
A
]
V
SD
, Source-Drain voltage [V]
0
10
20
30
40
50
60
0.0
0.2
0.4
0.6
0.8
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
DS
(O
N
)
[
],
Dr
ain-
Sour
c
e
O
n
-
R
esist
anc
e
I
D
, Drain Current [A]
2
4
6
8
10
10
-1
10
0
10
1
150
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 40V
2. 250 s Pulse Test
I
D
,
D
r
a
i
n
Cu
rre
nt [A]
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Notes :
1. 250 s Pulse Test
2. T
C
= 25
I
D
, D
r
a
i
n
C
u
r
r
e
n
t [A
]
V
DS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
Rev. A, March 2004
FQP19N20C/FQPF19N20C
2004 Fairchild Semiconductor Corporation
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
s
10 ms
100
s
DC
1 ms
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
,
D
r
ain Cur
r
ent
[
A
]
V
DS
, Drain-Source Voltage [V]
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10 ms
100
s
DC
1 ms
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
, Drai
n
Cur
r
ent [A]
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
5
10
15
20
I
D
,
Dr
ai
n Cur
r
ent
[
A
]
T
C
, Case Temperature [ ]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
GS
= 10 V
2. I
D
= 9.5 A
R
DS
(O
N)
, (Normali
z
ed)
Drain-S
ource O
n
-R
esist
a
n
c
e
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250 A
BV
DSS
, (N
orm
a
liz
ed
)
D
r
ain-S
o
u
r
ce B
r
ea
k
dow
n
V
o
ltag
e
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
Figure 9-1. Maximum Safe Operating Area
for FQP19N20C
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9-2. Maximum Safe Operating Area
for FQPF19N20C
Rev. A, March 2004
FQP19N20C/FQPF19N20C
2004 Fairchild Semiconductor Corporation
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N o te s :
1 . Z
J C
( t) = 0 . 9 0
/W M a x .
2 . D u t y F a c to r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
J C
( t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
JC
(t
),
T
her
ma
l
Re
spo
n
s
e
t
1
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N o te s :
1 . Z
J C
( t) = 2 .8 9
/W M a x .
2 . D u ty F a c to r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
J C
( t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
JC
(
t
),
T
hermal Response
t
1
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Typical Characteristics
(Continued)
Figure 11-1. Transient Thermal Response Curve for FQP19N20C
Figure 11-2. Transient Thermal Response Curve for FQPF19N20C
t
1
P
DM
t
2
t
1
P
DM
t
2
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