2003 Fairchild Semiconductor Corporation
Rev. A, September 2003
F
Q
P
2
N60C/F
QPF
2
N60
C
QFET
TM
FQP2N60C/FQPF2N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
2.0A, 600V, R
DS(on)
= 4.7
@V
GS
= 10 V
Low gate charge ( typical 8.5 nC)
Low Crss ( typical 4.3 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FQP2N60C
FQPF2N60C
Units
V
DSS
Drain-Source Voltage
600
V
I
D
Drain Current
- Continuous (T
C
= 25C)
2.0
2.0 *
A
- Continuous (T
C
= 100C)
1.35
1.35 *
A
I
DM
Drain Current
- Pulsed
(Note 1)
8
8 *
A
V
GSS
Gate-Source Voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
120
mJ
I
AR
Avalanche Current
(Note 1)
2.0
A
E
AR
Repetitive Avalanche Energy
(Note 1)
5.4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation (T
C
= 25C)
54
23
W
- Derate above 25C
0.43
0.18
W/C
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +150
C
T
L
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
300
C
Symbol
Parameter
FQP2N60C
FQPF2N60C
Units
R
JC
Thermal Resistance, Junction-to-Case
2.32
5.5
C
/
W
R
CS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
C
/
W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
C
/
W
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
S
D
G
Rev. A, September 2003
2003 Fairchild Semiconductor Corporation
F
Q
P
2
N60C/F
QPF
2
N60
C
Electrical Characteristics
T
C
= 25C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 56mH, I
AS
= 2A, V
DD
= 50V, R
G
= 25
,
Starting T
J
= 25C
3. I
SD
2A, di/dt
200A/
s, V
DD
BV
DSS,
Starting T
J
= 25C
4. Pulse Test : Pulse width
300
s, Duty cycle
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
A
600
--
--
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25C
--
0.6
--
V/C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 600 V, V
GS
= 0 V
--
--
1
A
V
DS
= 480 V, T
C
= 125C
--
--
10
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30 V, V
DS
= 0 V
--
--
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30 V, V
DS
= 0 V
--
--
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
2.0
--
4.0
V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 1 A
--
3.6
4.7
g
FS
Forward Transconductance
V
DS
= 40 V, I
D
= 1 A
(Note 4)
--
5.0
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
180
235
pF
C
oss
Output Capacitance
--
20
25
pF
C
rss
Reverse Transfer Capacitance
--
4.3
3
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 300 V, I
D
= 2 A,
R
G
= 25
(Note 4, 5)
--
9
28
ns
t
r
Turn-On Rise Time
--
25
60
ns
t
d(off)
Turn-Off Delay Time
--
24
58
ns
t
f
Turn-Off Fall Time
--
28
66
ns
Q
g
Total Gate Charge
V
DS
= 480 V, I
D
= 2 A,
V
GS
= 10 V
(Note 4, 5)
--
8.5
12
nC
Q
gs
Gate-Source Charge
--
1.3
--
nC
Q
gd
Gate-Drain Charge
--
4.1
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
2
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
8
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 2 A
--
--
1.4
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 2 A,
dI
F
/ dt = 100 A/
s
(Note 4)
--
230
--
ns
Q
rr
Reverse Recovery Charge
--
1.0
--
C
Rev. A, September 2003
2003 Fairchild Semiconductor Corporation
F
Q
P
2
N60C/F
QPF
2
N60
C
10
-1
10
0
10
1
10
-2
10
-1
10
0
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Notes :
1. 250
s Pulse Test
2. T
C
= 25
I
D
, D
r
a
i
n
C
u
r
r
e
n
t
[A
]
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
150
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 40V
2. 250
s Pulse Test
I
D
,
D
r
ai
n
C
u
r
r
ent
[
A
]
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
0
50
100
150
200
250
300
350
400
450
500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Note ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
a
pa
c
i
t
anc
e
s
[
p
F]
V
DS
, Drain-Source Voltage [V]
0
2
4
6
8
10
0
2
4
6
8
10
12
V
DS
= 300V
V
DS
= 120V
V
DS
= 480V
Note : I
D
= 2A
V
GS
, G
a
te
-
S
o
u
rc
e
V
o
l
t
a
g
e
[
V
]
Q
G
, Total Gate Charge [nC]
0
1
2
3
4
5
0
2
4
6
8
10
12
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
DS
(
O
N
)
[
],
D
r
ai
n-
S
our
ce O
n
-
R
esi
s
t
a
nc
e
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
150
Notes :
1. V
GS
= 0V
2. 250
s Pulse Test
25
I
DR
,
Re
v
e
r
s
e
Dr
a
i
n
Cu
r
r
e
n
t
[
A
]
V
SD
, Source-Drain voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
Rev. A, September 2003
2003 Fairchild Semiconductor Corporation
F
Q
P
2
N60C/F
QPF
2
N60
C
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250
A
BV
DS
S
,
(
N
or
m
a
l
i
z
ed
)
D
r
a
i
n
-
S
o
ur
ce
B
r
ea
kdow
n V
o
l
t
age
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
GS
= 10 V
2. I
D
= 2.5 A
R
DS
(
O
N
)
,
(
N
or
m
a
l
i
z
ed)
D
r
a
i
n-
S
our
c
e
O
n
-
R
esi
s
t
anc
e
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
100 ms
DC
10 ms
1 ms
100
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
, D
r
a
i
n
C
u
rre
n
t
[A
]
V
DS
, Drain-Source Voltage [V]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
100 ms
DC
10 ms
1 ms
100
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
,
D
r
ai
n C
u
r
r
ent
[
A
]
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0.0
0.4
0.8
1.2
1.6
2.0
2.4
I
D
,
D
r
ai
n C
u
r
r
ent
[
A
]
T
C
, Case Temperature [
]
Typical Characteristics
(Continued)
Figure 9-1. Maximum Safe Operating Area
for FQP2N60C
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9-2. Maximum Safe Operating Area
for FQPF2N60C
Rev. A, September 2003
2003 Fairchild Semiconductor Corporation
F
Q
P
2
N60C/F
QPF
2
N60
C
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N o te s :
1 . Z
J C
(t) = 5 .5
/W M a x .
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
J C
(t)
s in g le p u ls e
D = 0 .5
0 . 0 2
0 . 2
0 . 0 5
0 . 1
0 . 0 1
Z
JC
(
t
)
,
T
h
er
m
a
l
R
e
s
p
on
s
e
t
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
t
1
P
DM
t
2
Typical Characteristics
(Continued)
Figure 11-1. Transient Thermal Response Curve for FQP2N60C
Figure 11-2. Transient Thermal Response Curve for FQPF2N60C
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N o te s :
1 . Z
J C
(t) = 2 .3 2
/W M a x .
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
J C
(t)
s in g le p u ls e
D = 0 .5
0 . 0 2
0 . 2
0 . 0 5
0 . 1
0 . 0 1
Z
JC
(
t
)
,
T
h
er
m
a
l
R
e
s
pon
s
e
t
1
, S q u a r e W a v e P u ls e D u ra tio n [s e c ]
t
1
P
DM
t
2
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