2000 Fairchild Semiconductor International
August 2000
Rev. A, August 2000
FQ
P3P5
0
QFET
QFET
QFET
QFET
TM
FQP3P50
500V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast based on complimentary
half bridge.
Features
-2.7A, -500V, R
DS(on)
= 4.9
@V
GS
= -10 V
Low gate charge ( typical 18 nC)
Low Crss ( typical 9.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
FQP3P50
Units
V
DSS
Drain-Source Voltage
-500
V
I
D
Drain Current
- Continuous (T
C
= 25C)
-2.7
A
- Continuous (T
C
= 100C)
-1.71
A
I
DM
Drain Current
- Pulsed
(Note 1)
-10.8
A
V
GSS
Gate-Source Voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
250
mJ
I
AR
Avalanche Current
(Note 1)
-2.7
A
E
AR
Repetitive Avalanche Energy
(Note 1)
8.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
-4.5
V/ns
P
D
Power Dissipation (T
C
= 25C)
85
W
- Derate above 25C
0.68
W/C
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +150
C
T
L
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
300
C
Symbol
Parameter
Typ
Max
Units
R
JC
Thermal Resistance, Junction-to-Case
--
1.47
C
/
W
R
CS
Thermal Resistance, Case-to-Sink
0.5
--
C
/
W
R
JA
Thermal Resistance, Junction-to-Ambient
--
62.5
C
/
W
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S
D
G
TO-220
FQP Series
G
S
D
2000 Fairchild Semiconductor International
FQ
P3P50
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Rev. A, August 2000
Elerical Characteristics
T
C
= 25C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 62mH, I
AS
= -2.7A, V
DD
= -50V, R
G
= 25
,
Starting T
J
= 25C
3. I
SD
-2.7A, di/dt
200A/
s, V
DD
BV
DSS,
Starting T
J
= 25C
4. Pulse Test : Pulse width
300
s, Duty cycle
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250
A
-500
--
--
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= -250
A, Referenced to 25C
--
0.42
--
V/C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -500 V, V
GS
= 0 V
--
--
-1
A
V
DS
= -400 V, T
C
= 125C
--
--
-10
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= -30 V, V
DS
= 0 V
--
--
-100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= 30 V, V
DS
= 0 V
--
--
100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250
A
-3.0
--
-5.0
V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= -10 V, I
D
= -1.35 A
--
3.9
4.9
g
FS
Forward Transconductance
V
DS
= -50 V, I
D
= -1.35 A
--
2.35
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
--
510
660
pF
C
oss
Output Capacitance
--
70
90
pF
C
rss
Reverse Transfer Capacitance
--
9.5
12
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= -250 V, I
D
= -2.7 A,
R
G
= 25
--
12
35
ns
t
r
Turn-On Rise Time
--
56
120
ns
t
d(off)
Turn-Off Delay Time
--
35
80
ns
t
f
Turn-Off Fall Time
--
45
100
ns
Q
g
Total Gate Charge
V
DS
= -400 V, I
D
= -2.7 A,
V
GS
= -10 V
--
18
23
nC
Q
gs
Gate-Source Charge
--
3.6
--
nC
Q
gd
Gate-Drain Charge
--
9.2
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
-2.7
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
-10.8
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -2.7 A
--
--
-5.0
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= -2.7 A,
dI
F
/ dt = 100 A/
s
--
270
--
ns
Q
rr
Reverse Recovery Charge
--
1.5
--
C
2000 Fairchild Semiconductor International
FQ
P3P5
0
Rev. A, August 2000
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
V
DS
= -250V
V
DS
= -100V
V
DS
= -400V
Note : I
D
= -2.7 A
-V
GS
,
G
a
t
e
-
S
our
c
e
V
o
l
t
ag
e [
V
]
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
200
400
600
800
1000
1200
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
apa
ci
t
anc
e [
p
F]
V
DS
, Drain-Source Voltage [V]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
10
-1
10
0
10
1
150
Notes :
1. V
GS
= 0V
2. 250
s Pulse Test
25
-I
DR
,
R
e
v
e
rs
e
D
r
a
i
n
C
u
rre
n
t
[
A
]
-V
SD
, Source-Drain Voltage [V]
0
2
4
6
8
2
3
4
5
6
7
8
Note : T
J
= 25
V
GS
= - 20V
V
GS
= - 10V
R
DS
(
o
n
)
[
],
D
r
a
i
n-
S
o
ur
ce O
n
-
R
esi
s
t
a
nce
-I
D
, Drain Current [A]
2
4
6
8
10
10
-1
10
0
10
1
150
25
-55
Notes :
1. V
DS
= -50V
2. 250
s Pulse Test
-I
D
,
D
r
ai
n C
u
r
r
ent
[
A
]
-V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-2
10
-1
10
0
10
1
V
GS
Top : -15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
Bottom : -5.5 V
Notes :
1. 250
s Pulse Test
2. T
C
= 25
-I
D
,
D
r
ai
n C
u
r
r
ent
[
A
]
-V
DS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
2000 Fairchild Semiconductor International
FQ
P3P50
Rev. A, August 2000
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N o te s :
1 . Z
J C
( t ) = 1 . 4 7
/W M a x .
2 . D u ty F a c t o r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
J C
( t )
s in g le p u ls e
D = 0 . 5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
JC
(
t
)
,
T
h
er
m
a
l
R
e
s
pon
s
e
t
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
[
A
]
T
C
, Case Temperature [
]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
DC
10 ms
1 ms
100
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
-I
D
, D
r
a
i
n
C
u
r
r
e
n
t [A
]
-V
DS
, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
Notes :
1. V
GS
= -10 V
2. I
D
= -1.35 A
R
DS
(
O
N)
,
(
N
or
m
a
l
i
z
e
d)
D
r
ai
n-
S
o
ur
c
e
O
n
-
R
es
i
s
t
a
nc
e
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= -250
A
-B
V
DSS
, (
N
o
r
m
a
liz
e
d
)
D
r
ai
n-
S
o
u
r
ce B
r
eak
d
o
w
n
V
o
l
t
age
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
2000 Fairchild Semiconductor International
FQ
P3P5
0
Rev. A, August 2000
Charge
V
GS
-10V
Q
g
Q
gs
Q
gd
-3mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
Charge
V
GS
-10V
Q
g
Q
gs
Q
gd
-3mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
V
DS
V
GS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
-10V
V
DS
R
L
DUT
R
G
V
GS
V
DS
V
GS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
-10V
V
DS
R
L
DUT
R
G
V
GS
E
AS
=
L I
AS
2
----
2
1
--------------------
BV
DSS
- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
-10V
DUT
R
G
L
I
D
t
p
E
AS
=
L I
AS
2
----
2
1
E
AS
=
L I
AS
2
----
2
1
----
2
1
--------------------
BV
DSS
- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
-10V
DUT
R
G
L
L
I
D
I
D
t
p
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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