2002 Fairchild Semiconductor Corporation
October 2002
FQP45N03L Rev. B
FQ
P
4
5
N
03L
FQP45N03L
N-Channel Logic Level PWM Optimized Power MOSFET
General Description
This device employs a new advanced MOSFET technology
and features low gate charge while maintaining low on-
resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
DC/DC converters
Features
Fast switching
r
DS(ON)
= 0.014
(Typ), V
GS
= 10V
r
DS(ON)
= 0.020
(Typ), V
GS
= 5V
Q
g
(Typ) = 13nC, V
GS
= 5V
Q
gd
(Typ) = 4.5nC
C
ISS
(Typ) = 1450pF
MOSFET Maximum Ratings
T
C
= 25C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
Drain to Source Voltage
30
V
V
GS
Gate to Source Voltage
16
V
I
D
Drain Current
41
A
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 4.5V)
22
A
Continuous (T
C
= 25
o
C, V
GS
= 10V, R
JA
= 43
o
C/W)
8.1
A
Pulsed
Figure 4
A
P
D
Power dissipation
Derate above 25
o
C
53
0.43
W
W/
o
C
T
J
, T
STG
Operating and Storage Temperature
-55 to 150
o
C
R
JC
Thermal Resistance Junction to Case TO-220
2.31
o
C/W
R
JA
Thermal Resistance Junction to Ambient TO-220
62
o
C/W
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQP45N03L
FQP45N03L
TO-220AB
Tube
N/A
50
TO-220AB
DRAIN
(FLANGE)
DRAIN
SOURCE
GATE
S
G
D
2002 Fairchild Semiconductor Corporation
FQP45N03L Rev. B
FQ
P
4
5
N
03L
Electrical Characteristics
T
C
= 25C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
(V
GS
= 4.5V)
Switching Characteristics
(V
GS
= 10V)
Unclamped Inductive Switching
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
A, V
GS
= 0V
30
-
-
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 25V
-
-
1
A
V
GS
= 0V
T
C
= 150
o
C
-
-
250
I
GSS
Gate to Source Leakage Current
V
GS
=
16V
-
-
100
nA
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
A
1
-
3
V
r
DS(ON)
Drain to Source On Resistance
I
D
= 41A, V
GS
= 10V
-
0.014
0.018
I
D
= 22A, V
GS
= 4.5V
-
0.020
0.025
C
ISS
Input Capacitance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
1450
-
pF
C
OSS
Output Capacitance
-
300
-
pF
C
RSS
Reverse Transfer Capacitance
-
120
-
pF
Q
g(TOT)
Total Gate Charge at 10V
V
GS
= 0V to 10V
V
DD
= 15V
I
D
= 22A
I
g
= 1.0mA
25
38
nC
Q
g(5)
Total Gate Charge at 5V
V
GS
= 0V to 5V
-
13
20
nC
Q
g(TH)
Threshold Gate Charge
V
GS
= 0V to 1V
-
1.5
2.3
nC
Q
gs
Gate to Source Gate Charge
-
4.3
-
nC
Q
gd
Gate to Drain "Miller" Charge
-
4.5
-
nC
t
ON
Turn-On Time
V
DD
= 15V, I
D
= 11A
V
GS
= 5V, R
GS
= 11
-
-
115
ns
t
d(ON)
Turn-On Delay Time
-
15
-
ns
t
r
Rise Time
-
60
-
ns
t
d(OFF)
Turn-Off Delay Time
-
25
-
ns
t
f
Fall Time
-
30
-
ns
t
OFF
Turn-Off Time
-
-
83
ns
t
ON
Turn-On Time
V
DD
= 15V, I
D
= 11A
V
GS
= 10V, R
GS
= 11
-
-
57
ns
t
d(ON)
Turn-On Delay Time
-
8
-
ns
t
r
Rise Time
-
30
-
ns
t
d(OFF)
Turn-Off Delay Time
-
45
-
ns
t
f
Fall Time
-
30
-
ns
t
OFF
Turn-Off Time
-
-
115
ns
t
AV
Avalanche Time
I
D
= 2.9A, L = 3.0mH
195
-
-
s
V
SD
Source to Drain Diode Voltage
I
SD
= 22A
-
-
1.25
V
I
SD
= 20A
-
-
1.0
V
t
rr
Reverse Recovery Time
I
SD
= 22A, dI
SD
/dt = 100A/
s
-
-
65
ns
Q
RR
Reverse Recovered Charge
I
SD
= 22A, dI
SD
/dt = 100A/
s
-
-
100
nC
2002 Fairchild Semiconductor Corporation
FQP45N03L Rev. B
FQ
P
4
5
N
03L
Typical Characteristic
T
C
= 25C unless otherwise noted
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
A
, AMBIENT TEMPERATURE (
o
C)
P
O
W
E
R DIS
S
IP
A
T
IO
N M
U
L
T
IP
L
I
E
R
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
10
20
30
40
50
25
50
75
100
125
150
I
D
, DRAIN CURRE
NT
(
A
)
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 5V
V
GS
= 10V
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
2
t , RECTANGULAR PULSE DURATION (s)
Z
JC
, NO
RM
AL
IZ
E
D
T
H
E
R
M
A
L
IM
P
E
D
ANCE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
t
2
0.5
0.2
0.1
0.05
0.01
0.02
DUTY CYCLE - DESCENDING ORDER
SINGLE PULSE
100
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
40
700
I
DM
,
P
E
AK CURRE
NT
(
A
)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
I = I
25
150 - T
C
125
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 5V
t, PULSE WIDTH (s)
V
GS
= 10V
2002 Fairchild Semiconductor Corporation
FQP45N03L Rev. B
FQ
P
4
5
N
03L
Figure 5. Transfer Characteristics
Figure 6. Saturation Characteristics
Figure 7. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 8. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 9. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 10. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Typical Characteristic
T
C
= 25C unless otherwise noted (Continued)
0
20
40
60
80
100
1
2
3
4
5
6
I
D
, DRAIN CURRE
NT
(
A
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= -55
o
C
T
J
= 150
o
C
T
J
= 25
o
C
0
40
80
120
0
0.5
1.0
1.5
2.0
I
D
, DRAIN CURRE
NT
(
A
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
GS
= 3V
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 5V
V
GS
= 4V
20
30
40
2
4
6
8
10
10
I
D
= 22A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 41A
r
DS
(
O
N)
, DRAIN T
O
S
O
URCE
O
N
RE
S
I
S
T
ANCE
(
m
)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
NO
RM
AL
IZ
E
D
DRAIN T
O
S
O
URCE
T
J
, JUNCTION TEMPERATURE (
o
C)
O
N
RE
S
I
S
T
ANCE
V
GS
= 10V, I
D
= 41A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0.4
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
NO
RM
AL
IZ
E
D
G
A
T
E
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
A
T
HRE
S
H
O
L
D V
O
L
T
A
G
E
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
NO
RM
AL
IZ
E
D
DRAIN T
O
S
O
URCE
I
D
= 250
A
BRE
AKDO
W
N
V
O
L
T
A
G
E
2002 Fairchild Semiconductor Corporation
FQP45N03L Rev. B
FQ
P
4
5
N
03L
Figure 11. Capacitance vs Drain to Source
Voltage
Figure 12. Gate Charge Waveforms for Constant
Gate Currents
Figure 13. Switching Time vs Gate Resistance
Figure 14. Switching Time vs Gate Resistance
Typical Characteristic
T
C
= 25C unless otherwise noted (Continued)
100
1000
0.1
1
10
2000
30
C, CAP
A
C
IT
ANCE
(
p
F
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
= C
GD
0
2
4
6
8
10
0
10
20
30
V
GS
, G
A
T
E
T
O
S
O
U
RCE
V
O
L
T
A
G
E
(
V
)
Q
g
, GATE CHARGE (nC)
V
DD
= 15V
I
D
= 41A
I
D
= 22A
WAVEFORMS IN
DESCENDING ORDER:
0
50
100
150
0
10
20
30
40
50
S
W
IT
CHING
T
I
M
E
(
n
s
)
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 15V, I
D
= 11A
t
d(OFF)
t
r
t
f
t
d(ON)
0
50
100
150
200
0
10
20
30
40
50
S
W
IT
CHING
T
I
M
E
(
n
s
)
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 10V, V
DD
= 15V, I
D
= 11A
t
d(OFF)
t
d(ON)
t
f
t
r
Test Circuits and Waveforms
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
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