2000 Fairchild Semiconductor International
December 2000
Rev. A2, December 2000
FQ
P9P25
QFET
QFET
QFET
QFET
TM
FQP9P25
250V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for high efficiency switching DC/DC converters.
Features
-9.4A, -250V, R
DS(on)
= 0.62
@V
GS
= -10 V
Low gate charge ( typical 29 nC)
Low Crss ( typical 27 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
FQP9P25
Units
V
DSS
Drain-Source Voltage
-250
V
I
D
Drain Current
- Continuous (T
C
= 25C)
-9.4
A
- Continuous (T
C
= 100C)
-5.9
A
I
DM
Drain Current
- Pulsed
(Note 1)
-37.6
A
V
GSS
Gate-Source Voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
650
mJ
I
AR
Avalanche Current
(Note 1)
-9.4
A
E
AR
Repetitive Avalanche Energy
(Note 1)
12
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
-5.5
V/ns
P
D
Power Dissipation (T
C
= 25C)
120
W
- Derate above 25C
0.96
W/C
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +150
C
T
L
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
300
C
Symbol
Parameter
Typ
Max
Units
R
JC
Thermal Resistance, Junction-to-Case
--
1.04
C
/
W
R
CS
Thermal Resistance, Case-to-Sink
0.5
--
C
/
W
R
JA
Thermal Resistance, Junction-to-Ambient
--
62.5
C
/
W
TO-220
FQP Series
G
S
D
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S
D
G
2000 Fairchild Semiconductor International
FQ
P9P25
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Rev. A2, December 2000
Electrical Characteristics
T
C
= 25C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 11.8mH, I
AS
= -9.4A, V
DD
= -50V, R
G
= 25
,
Starting T
J
= 25C
3. I
SD
-9.4A, di/dt
300A/
s, V
DD
BV
DSS,
Starting T
J
= 25C
4. Pulse Test : Pulse width
300
s, Duty cycle
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250
A
-250
--
--
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= -250
A, Referenced to 25C
--
-0.2
--
V/C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -250 V, V
GS
= 0 V
--
--
-1
A
V
DS
= -200 V, T
C
= 125C
--
--
-10
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= -30 V, V
DS
= 0 V
--
--
-100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= 30 V, V
DS
= 0 V
--
--
100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250
A
-3.0
--
-5.0
V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= -10 V, I
D
= -4.7 A
--
0.48
0.62
g
FS
Forward Transconductance
V
DS
= -40 V, I
D
= -4.7 A
--
5.7
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
--
910
1180
pF
C
oss
Output Capacitance
--
170
220
pF
C
rss
Reverse Transfer Capacitance
--
27
35
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= -125 V, I
D
= -9.4 A,
R
G
= 25
--
20
50
ns
t
r
Turn-On Rise Time
--
150
310
ns
t
d(off)
Turn-Off Delay Time
--
45
100
ns
t
f
Turn-Off Fall Time
--
65
140
ns
Q
g
Total Gate Charge
V
DS
= -200 V, I
D
= -9.4 A,
V
GS
= -10 V
--
29
38
nC
Q
gs
Gate-Source Charge
--
7.6
--
nC
Q
gd
Gate-Drain Charge
--
14
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
-9.4
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
-37.6
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -9.4 A
--
--
-5.0
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= -9.4 A,
dI
F
/ dt = 100 A/
s
--
190
--
ns
Q
rr
Reverse Recovery Charge
--
1.45
--
C
2000 Fairchild Semiconductor International
FQ
P9P25
Rev. A2, December 2000
0
5
10
15
20
25
30
35
0
2
4
6
8
10
12
V
DS
= -125V
V
DS
= -50V
V
DS
= -200V
Note : I
D
= -9.4 A
-V
GS
,
G
a
t
e
-
S
our
c
e
V
o
l
t
ag
e [
V
]
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
400
800
1200
1600
2000
2400
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
apa
ci
t
anc
e [
p
F]
-V
DS
, Drain-Source Voltage [V]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
10
-1
10
0
10
1
150
Notes :
1. V
GS
= 0V
2. 250
s Pulse Test
25
-I
DR
,
R
e
v
e
rs
e
D
r
a
i
n
C
u
rre
n
t
[
A
]
-V
SD
, Source-Drain Voltage [V]
0
10
20
30
40
0.0
0.5
1.0
1.5
2.0
Note : T
J
= 25
V
GS
= - 20V
V
GS
= - 10V
R
D
S
(
on)
[
],
D
r
a
i
n-
S
o
ur
c
e
O
n
-
R
es
i
s
t
a
nc
e
-I
D
, Drain Current [A]
2
4
6
8
10
10
-1
10
0
10
1
150
25
-55
Notes :
1. V
DS
= -50V
2. 250
s Pulse Test
-I
D
,
D
r
ai
n C
u
r
r
ent
[
A
]
-V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top : -15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
Bottom : -5.5 V
Notes :
1. 250
s Pulse Test
2. T
C
= 25
-I
D
,
D
r
ai
n C
u
r
r
ent
[
A
]
-V
DS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
2000 Fairchild Semiconductor International
FQ
P9P25
Rev. A2, December 2000
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N o te s :
1 . Z
J C
( t ) = 1 . 0 4
/W M a x .
2 . D u ty F a c t o r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
J C
( t )
s in g le p u ls e
D = 0 . 5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
JC
(
t
)
,
T
h
er
m
a
l
R
e
s
pon
s
e
t
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
25
50
75
100
125
150
0
2
4
6
8
10
-I
D
,
D
r
ai
n
C
u
r
r
e
nt
[
A
]
T
C
, Case Temperature [
]
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
DC
10 ms
1 ms
100
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
-I
D
,
D
r
ai
n C
u
r
r
ent
[
A
]
-V
DS
, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
GS
= -10 V
2. I
D
= -4.7 A
R
DS
(
O
N)
,
(
N
or
m
a
l
i
z
e
d)
D
r
ai
n-
S
o
ur
c
e
O
n
-
R
es
i
s
t
a
nc
e
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= -250
A
-B
V
DSS
, (
N
o
r
m
a
liz
e
d
)
D
r
ai
n-
S
o
u
r
ce B
r
eak
d
o
w
n
V
o
l
t
age
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
2000 Fairchild Semiconductor International
FQ
P9P25
Rev. A2, December 2000
Charge
V
GS
-10V
Q
g
Q
gs
Q
gd
-3mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
Charge
V
GS
-10V
Q
g
Q
gs
Q
gd
-3mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
V
DS
V
GS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
-10V
V
DS
R
L
DUT
R
G
V
GS
V
DS
V
GS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
-10V
V
DS
R
L
DUT
R
G
V
GS
E
AS
=
L I
AS
2
----
2
1
--------------------
BV
DSS
- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
-10V
DUT
R
G
L
I
D
t
p
E
AS
=
L I
AS
2
----
2
1
E
AS
=
L I
AS
2
----
2
1
----
2
1
--------------------
BV
DSS
- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
-10V
DUT
R
G
L
L
I
D
I
D
t
p
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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