2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQPF5N50CF Rev. B
FQPF5
N
5
0
C
F
500
V N
-
C
h
annel
M
O
SFET
FRFET
TM
FQPF5N50CF
500V N-Channel MOSFET
Features
5A, 500V, R
DS(on)
= 1.55
@V
GS
= 10 V
Low gate charge ( typical 18nC)
Low Crss ( typical 15pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild's proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
Absolute Maximum Ratings
Thermal Characteristics
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S
D
G
TO-220F
FQPF Series
G
S
D
Symbol
Parameter
FQPF5N50CF
Units
V
DSS
Drain-Source Voltage
500
V
I
D
Drain Current
- Continuous (T
C
= 25C)
5
A
- Continuous (T
C
= 100C)
2.9
A
I
DM
Drain Current
- Pulsed
(Note 1)
20
A
V
GSS
Gate-Source Voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
300
mJ
I
AR
Avalanche Current
(Note 1)
5
A
E
AR
Repetitive Avalanche Energy
(Note 1)
7.3
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation (T
C
= 25C)
38
W
- Derate above 25C
0.3
W/C
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +150
C
T
L
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
300
C
Symbol
Parameter
FQPF5N50CF
Units
R
JC
Thermal Resistance, Junction-to-Case
3.31
C
/
W
R
JS
Thermal Resistance, Case-to-Sink Typ.
--
C
/
W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
C
/
W
2
www.fairchildsemi.com
FQPF5N50CF Rev. B
FQPF5
N
5
0
C
F
500
V N
-
C
h
annel
M
O
SFET
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 21.5 mH, I
AS
= 5A, V
DD
= 50V, R
G
= 25
,
Starting T
J
= 25C
3. I
SD
5A, di/dt
200A/
s, V
DD
BV
DSS,
Starting T
J
= 25C
4. Pulse Test : Pulse width
300
s, Duty cycle
2%
5. Essentially independent of operating temperature
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQPF5N50CF
FQPF5N50CF
TO-220F
-
-
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
A
500
--
--
V
BV
DSS
/
T
J
Breakdown Voltage Temperature Coef-
ficient
I
D
= 250
A, Referenced to 25C
--
0.5
--
V/C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 500 V, V
GS
= 0 V
--
--
1
A
V
DS
= 400 V, T
C
= 125C
--
--
10
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30 V, V
DS
= 0 V
--
--
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30 V, V
DS
= 0 V
--
--
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
2.0
--
4.0
V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 2.5A
--
1.3
1.55
g
FS
Forward Transconductance
V
DS
= 40 V, I
D
= 2.5A
(Note 4)
--
5.2
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
480
625
pF
C
oss
Output Capacitance
--
80
105
pF
C
rss
Reverse Transfer Capacitance
--
15
20
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 250 V, I
D
= 5A,
R
G
= 25
(Note 4, 5)
--
12
35
ns
t
r
Turn-On Rise Time
--
46
100
ns
t
d(off)
Turn-Off Delay Time
--
50
110
ns
t
f
Turn-Off Fall Time
--
48
105
ns
Q
g
Total Gate Charge
V
DS
= 400 V, I
D
= 5A,
V
GS
= 10 V
(Note 4, 5)
--
18
24
nC
Q
gs
Gate-Source Charge
--
2.2
--
nC
Q
gd
Gate-Drain Charge
--
9.7
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
5
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
20
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 5 A
--
--
1.4
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 5 A,
dI
F
/ dt = 100 A/
s
(Note 4)
--
65
--
ns
Q
rr
Reverse Recovery Charge
--
0.11
--
C
3
www.fairchildsemi.com
FQPF5N50CF Rev. B
FQPF5
N
5
0
C
F
500
V N
-
C
h
annel
M
O
SFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage
Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
2
4
6
8
10
10
-1
10
0
10
1
150
C
25
C
-55
C
Notes :
1. V
DS
= 40V
2. 250
s Pulse Test
I
D
,
D
r
ai
n Cur
r
en
t
[
A
]
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Notes :
1. 250
s Pulse Test
2. T
C
= 25
C
I
D
,
D
r
ai
n C
u
r
r
ent
[
A
]
V
DS
, Drain-Source Voltage [V]
0
5
10
15
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
C
R
DS
(ON)
[
],
D
r
ai
n-
S
o
ur
c
e
O
n
-
R
e
s
i
s
t
anc
e
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
10
1
150?
Notes :
1. V
GS
= 0V
2. 250
s Pulse Test
25?
I
DR
,
Rev
e
r
s
e Dr
ai
n Cur
r
ent
[
A
]
V
SD
, Source-Drain voltage [V]
10
-1
10
0
10
1
0
200
400
600
800
1000
1200
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
a
pac
i
t
anc
e [
p
F
]
V
DS
, Drain-Source Voltage [V]
0
5
10
15
20
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 100V
V
DS
= 400V
Note : I
D
= 5A
V
GS
,
G
a
t
e
-
S
our
ce
Vol
t
ag
e [
V
]
Q
G
, Total Gate Charge [nC]
4
www.fairchildsemi.com
FQPF5N50CF Rev. B
FQPF5
N
5
0
C
F
500
V N
-
C
h
annel
M
O
SFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs
Case Temperature
Figure 10. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250
A
BV
DSS
, (
N
or
m
a
l
i
z
ed
)
D
r
a
i
n-
So
ur
c
e
B
r
eak
d
ow
n
V
o
l
t
a
g
e
T
J
, Junction Temperature [
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
GS
= 10 V
2. I
D
= 2.5 A
R
DS
(O
N
)
,
(
N
or
m
a
l
i
z
ed)
D
r
ai
n-
S
our
ce O
n
-
R
esi
s
t
ance
T
J
, Junction Temperature [
C]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10
s
100 ms
DC
10 ms
1 ms
100
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
C
2. T
J
= 150
C
3. Single Pulse
I
D
, D
r
ain C
u
rrent [A
]
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
1
2
3
4
5
6
I
D
,
D
r
ai
n Cur
r
e
n
t
[
A
]
T
C
, Case Temperature [
C]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N o te s :
1 . Z
J C
( t) = 3 .3 1
C / W M a x .
2 . D u t y F a c to r , D = t
1
/ t
2
3 . T
J M
- T
C
= P
D M
* Z
J C
( t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
JC
(
t
)
,
Ther
m
a
l
R
e
spons
e
t
1
, S q u a r e W a v e P u ls e D u r a t io n [s e c ]
t
1
P
DM
t
2
5
www.fairchildsemi.com
FQPF5N50CF Rev. B
FQPF5
N
5
0
C
F
500
V N
-
C
h
annel
M
O
SFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
E
AS
=
L I
AS
2
----
2
1
--------------------
BV
DSS
- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V
DUT
R
G
L
I
D
t
p
E
AS
=
L I
AS
2
----
2
1
E
AS
=
L I
AS
2
----
2
1
----
2
1
--------------------
BV
DSS
- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V
DUT
R
G
L
L
I
D
I
D
t
p
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