2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQPF9N50CF Rev. A
FQPF9N50CF 5
0
0V N-Chann
e
l MOSFE
T
December 2005
FRFET
TM
FQPF9N50CF
500V N-Channel MOSFET
Features
9A, 500V, R
DS(on)
= 0.85
@V
GS
= 10 V
Low gate charge (typical 28 nC)
Low Crss (typical 24pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Fast recovery body diode (typical 100ns)
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild's proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
Absolute Maximum Ratings
Thermal Characteristics
TO-220F
FQPF Series
G
S
D
D
G
S
Symbol
Parameter
FQPF9N50CF
Units
V
DSS
Drain-Source Voltage
500
V
I
D
Drain Current
- Continuous (T
C
= 25C)
9*
A
- Continuous (T
C
= 100C)
5.4*
A
I
DM
Drain Current
- Pulsed
(Note 1)
36*
A
V
GSS
Gate-Source Voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
360
mJ
I
AR
Avalanche Current
(Note 1)
9
A
E
AR
Repetitive Avalanche Energy
(Note 1)
4.4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation (T
C
= 25C)
44
W
- Derate above 25C
0.35
W/C
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +150
C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
C
Symbol
Parameter
FQPF9N50CF
Units
R
JC
Thermal Resistance, Junction-to-Case
2.86
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
C/W
* Drain current limited by maximum junction temperature
2
www.fairchildsemi.com
FQPF9N50CF Rev. A
FQPF9N50CF 5
0
0V N-Chann
e
l MOSFE
T
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25C unless otherwise noted
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 8mH, I
AS
= 9A, V
DD
= 50V, R
G
= 25
, Starting T
J
= 25C
3. I
SD
11A, di/dt 200A/s, V
DD
BV
DSS,
Starting T
J
= 25C
4. Pulse Test : Pulse width
300s, Duty cycle 2%
5. Essentially independent of operating temperature
* Current limited by maximum junction temperature
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQPF9N50CF
FQPF9N50CF
TO-220F
--
--
50
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
A
500
--
--
V
BV
DSS
/
T
J
Breakdown Voltage Temperature Coefficient
I
D
= 250
A, Referenced to 25C
--
0.57
--
V/C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 500 V, V
GS
= 0 V
--
--
10
A
V
DS
= 400 V, T
C
= 125C
--
--
100
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30 V, V
DS
= 0 V
--
--
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30 V, V
DS
= 0 V
--
--
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
2.0
--
4.0
V
R
DS(on)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 4.5 A
--
0.70
0.85
g
FS
Forward Transconductance
V
DS
= 40 V, I
D
= 4.5 A
(Note 4)
--
6.5
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
790
1030
pF
C
oss
Output Capacitance
--
130
170
pF
C
rss
Reverse Transfer Capacitance
--
24
30
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 250 V, I
D
= 9A,
R
G
= 25
(Note 4, 5)
--
18
45
ns
t
r
Turn-On Rise Time
--
65
140
ns
t
d(off)
Turn-Off Delay Time
--
93
195
ns
t
f
Turn-Off Fall Time
--
64
125
ns
Q
g
Total Gate Charge
V
DS
= 400 V, I
D
= 9A,
V
GS
= 10 V
(Note 4, 5)
--
28
35
nC
Q
gs
Gate-Source Charge
--
4
--
nC
Q
gd
Gate-Drain Charge
--
15
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
9*
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
36*
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 9 A
--
--
1.4
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 9 A,
dI
F
/ dt = 100 A/
s
(Note 4)
--
100
--
ns
Q
rr
Reverse Recovery Charge
--
0.3
--
C
3
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FQPF9N50CF Rev. A
FQPF9N50CF 5
0
0V N-Chann
e
l MOSFE
T
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage
Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Notes :
1. 250 s Pulse Test
2. T
C
= 25
I
D
, Dra
i
n C
u
r
r
e
n
t [A
]
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
150
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 40V
2. 250 s Pulse Test
I
D
,
D
r
ain Cur
r
ent
[
A
]
V
GS
, Gate-Source Voltage [V]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
10
1
150
Notes :
1. V
GS
= 0V
2. 250 s Pulse Test
25
I
DR
,
Reverse Drain Cur
r
ent
[
A
]
V
SD
, Source-Drain voltage [V]
0
5
10
15
20
25
0.5
1.0
1.5
2.0
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
DS
(
O
N
)
[
],
Drai
n-Source O
n
-
R
e
s
i
s
t
a
n
c
e
I
D
, Drain Current [A]
0
5
10
15
20
25
30
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 100V
V
DS
= 400V
Note : I
D
= 9A
V
GS
,
Gat
e
-So
u
r
c
e V
o
l
t
ag
e [
V
]
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
400
800
1200
1600
2000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
apac
itanc
e [pF]
V
DS
, Drain-Source Voltage [V]
4
www.fairchildsemi.com
FQPF9N50CF Rev. A
FQPF9N50CF 5
0
0V N-Chann
e
l MOSFE
T
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250 A
BV
DSS
, (N
o
r
ma
l
i
z
e
d
)
D
r
ai
n-Source Br
e
a
k
dow
n
V
o
l
t
ag
e
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
GS
= 10 V
2. I
D
= 4.5 A
R
DS(
O
N)
,
(
N
ormal
i
z
ed)
Dr
ai
n-Source O
n
-Resi
s
t
ance
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
100 ms
10
s
DC
10 ms
1 ms
100
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
,
Dr
a
i
n C
u
r
r
e
nt
[
A
]
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
2
4
6
8
10
I
D
,
Dr
ain Cur
r
ent
[
A
]
T
C
, Case Temperature [ ]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N o te s :
1 . Z
J C
( t) = 2 .8 6
/W M a x .
2 . D u ty F a c to r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
J C
( t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
JC
(
t
),
T
h
er
m
a
l
Re
s
p
on
s
e
t
1
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
t
1
P
DM
t
2
5
www.fairchildsemi.com
FQPF9N50CF Rev. A
FQPF9N50CF 5
0
0V N-Chann
e
l MOSFE
T
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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