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Электронный компонент: FS6S0765RCB

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2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev.1.0.0
Features
Wide Operating Frequency Range up to 150KHz
Internal Burst Mode Controller for Stand-by Mode
Pulse by Pulse Over Current Limiting
Over Current Protection(Auto Restart Mode)
Over Voltage Protection (Auto Restart Mode)
Over Load Protection(Auto Restart Mode)
Internal Thermal Shutdown Function(Auto Restart Mode)
Under Voltage Lockout
Internal High Voltage SenseFET
Internal Sync Terminal/Soft Start
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM IC.
Included PWM controller features integrated fixed oscillator,
under voltage lock out, optimized gate turn on/turn off driver,
thermal shutdown protection, over voltage protection, and
temperature compensated precision current sources for loop
compensation and fault protection circuitry. Compared to
discrete MOSFET and controller or RCC switching converter
solution, a Fairchild Power Switch(FPS) can reduce total
component count, design size, and weight and at the same
time increase efficiency, productivity and system reliability.
It has a basic platform well suited for cost effective monitor
power supply.
TO-220-5L
1
1. Drain 2. GND 3. V
CC
5. Soft Start & Sync.
4. Feedback
Internal Block Diagram
S
R
Q
S
R
Q
TS
D
(Tj=160)
Ifb
1
1
1
1
3
3
3
3
5
5
5
5
4
4
4
4
2
2
2
2
Vref
Rsenese
2.5R
R
Vref
Internal
Bias
Vref
UVLO
Ron
Roff
PWM
OCL
Burst mode
controller
Filter
(130nsec)
UVLO Reset
(Vcc=9V)
OLP
OVP
Vth=7.5V
Vcc
Vth=30V
Vth=1V
Vfb Offset
Idelay
Vcc
Vfb
Vth=1V
Vcc
Vth=11V/12V
OSC
Vref
Vpp=5.8/7.2V
Drain
Drain
Drain
Drain
Vcc
Vcc
Vcc
Vcc
SoftStart
SoftStart
SoftStart
SoftStart
& Sync
& Sync
& Sync
& Sync
Feedback
Feedback
Feedback
Feedback
GND
GND
GND
GND
FS6S0765RCB
Fairchild Power Switch(FPS)
FS6S0765RCB
2
Absolute Maximum Ratings
(Ta=25
C, unless otherwise specified)
Note:
1. T
j
= 25
C to 150
C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L = 14.5mH, starting T
j
= 25
C
4. L = 13uH, starting T
j
= 25
C
Parameter
Symbol
Value
Unit
Drain-Source(GND) Voltage
(1)
V
DSS
650
V
Drain-Gate Voltage (R
GS
=1M
)
V
DGR
650
V
Gate-Source (GND) Voltage
V
GS
30
V
Drain Current Pulsed
(2)
I
DM
28
A
DC
Single Pulsed Avalanche Energy
(3)
E
AS
570
mJ
Single Pulsed Avalanche Current
(4)
I
AS
17
A
Continuous Drain Current (Tc = 25C)
I
D
7
A
DC
Continuous Drain Current (T
C
=100
C)
I
D
4.5
A
DC
Supply Voltage
V
CC
35
V
Input Voltage Range
V
FB
-
0.3 to V
CC
V
V
S_S
-
0.3 to 10
V
Total Power Dissipation
P
D
(Watt H/S)
145
W
Darting
1.163
W/
C
Operating Junction Temperature
T
j
+150
C
Operating Ambient Temperature
T
A
-
25 to +85
C
Storage Temperature Range
T
STG
-
55 to +150
C
FS6S0765RCB
3
Electrical Characteristics (SenseFET part)
(Ta=25
C unless otherwise specified)
Note:
1. Pulse test : Pulse width
300
S, duty 2%
2.
Parameter
Symbol
Condition
Min.
Typ. Max. Unit
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
A
650
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 650V, V
GS
= 0V
-
-
200
A
V
DS
= 520V
V
GS
= 0V, T
C
= 125
C
-
-
300
A
Static Drain-Source on Resistance
(1)
R
DS(ON)
V
GS
= 10V, I
D
= 1.8A
-
1.3
1.6
Forward Transconductance
(2)
gfs
V
DS
= 50V, I
D
= 1.8A
-
3.3
-
S
Input Capacitance
Ciss
V
GS
= 0V, V
DS
= 25V,
f = 1MHz
-
1200
-
pF
Output Capacitance
Coss
-
125
-
Reverse Transfer Capacitance
Crss
-
23
-
Turn on Delay Time
td(on)
V
DD
= 325V, I
D
= 6.5A
(MOSFET switching
time are essentially
independent of
operating temperature)
-
22
-
nS
Rise Time
tr
-
70
-
Turn Off Delay Time
td(off)
-
105
-
Fall Time
tf
-
65
-
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
V
GS
= 10V, I
D
= 6.5A,
V
DS
= 520V (MOSFET
Switching time are
Essentially independent of
Operating temperature)
-
40
-
nC
Gate Source Charge
Qgs
-
6.5
-
Gate Drain (Miller) Charge
Qgd
-
18
-
S
1
R
----
=
FS6S0765RCB
4
Electrical Characteristics
(Continued)
(Ta=25
C unless otherwise specified)
Note:
1. These parameters, although guaranteed, are tested in EDS(wafer test) process.
2. These parameters, although guaranteed at the design, are not tested in massing production
Parameter
Symbol
Condition
Min. Typ. Max. Unit
UVLO SECTION
Start Threshold Voltage
V
START
V
FB
= GND
14
15
16
V
Stop Threshold Voltage
V
STOP
V
FB
= GND
8
9
10
V
OSCILLATOR SECTION
Initial Frequency
F
OSC
-
22
25
28
kHz
Voltage Stability
F
STABLE
12V
Vcc
23V
0
1
3
%
Temperature Stability
(2)
F
OSC
-25
C
Ta
85
C
0
5
10
%
Maximum Duty Cycle
D
MAX
-
92
95
98
%
Minimum Duty Cycle
D
MIN
-
-
-
0
%
FEEDBACK SECTION
Feedback Source Current
I
FB
V
FB
= GND
0.7
0.9
1.1
mA
Shutdown Feedback Voltage
V
SD
Vfb
6.9V
6.9
7.5
8.1
V
Shutdown Delay Current
Idelay
V
FB
= 5V
1.6
2.0
2.4
A
PROTECTION SECTION
Over Voltage Protection
V
OVP
V
CC
27V
27
30
33
V
Over Current Latch Voltage
(1)
V
OCL
-
0.9
1.0
1.1
V
Thermal Shutdown Temp.
(2)
T
SD
-
140
160
-
C
FS6S0765RCB
5
Electrical Characteristics
(Continued)
(Ta=25
C unless otherwise specified)
Note:
1. These parameters are the current flowing in the Control IC.
2. These parameters indicate Inductor Current.
3. These parameters, although guaranteed at the design, are not tested in massing production.
Parameter
Symbol
Condition
Min. Typ. Max. Unit
SYNC & SOFTSTART SECTION
Softstart Voltage
V
SS
Vfb = 2
4.7
5.0
5.3
V
Softstart Current
I
SS
Vss = V
0.8
1.0
1.2
mA
Sync High Threshold Voltage
V
SYNCH
Vcc = 16V, Vfb = 5V
-
7.2
-
V
Sync Low Threshold Voltage
V
SYNCL
Vcc = 16V, Vfb = 5V
-
5.8
-
V
BURST MODE SECTION
Burst Mode Low Threshold Voltage
V
BURL
Vfb = 0V
10.4 11.0 11.6
V
Burst Mode High Threshold Voltage
V
BURH
Vfb = 0V
11.4 12.0 12.6
V
Burst Mode Enable Feedback Voltage
(3)
V
BEN
Vcc = 10.5V
0.7
1.0
1.3
V
Burst Mode Peak Current Limit
(2)
I
BU_PK
Vcc = 10.5V
0.45
0.6
0.75
V
Burst Mode Frequency
F
BUR
Vcc = 10.5V, Vfb = 0V
40
50
60
KHz
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit
(2)
I
OVER
-
3.52
4.0
4.48
A
TOTAL DEVICE SECTION
Start Up Current
I
START
Vfb = GND, V
CC
= 14V
-
0.1
0.17
mA
Operating Supply Current
(1)
I
OP
Vfb = GND, V
CC
= 16V
-
10
15
mA
I
OP(MIN)
Vfb = GND, V
CC
= 10V
I
OP(MAX)
Vfb = GND, V
CC
= 28V