FSB749
SuperSOT
TM
-3
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous. Sourced from Process PC.
Absolute Maximum Ratings*
T
A = 25C unless otherwise noted
C
-55 to +150
Operating and Storage Junction Temperature Range
T
J,
T
stg
A
3
Collector Current - Continuous
I
C
V
5
Emitter-Base Voltage
V
EBO
V
35
Collector-Base Voltage
V
CBO
V
25
Collector-Emitter Voltage
V
CEO
Units
FSB749
Parameter
Symbol
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
T
A = 25C unless otherwise noted
C/W
250
Thermal Resistance, Junction to Ambient
R
JA
mW
500
Total Device Dissipation
P
D
FSB749
Units
Max
Characteristic
Symbol
1999 Fairchild Semiconductor Corporation
fsb749.lwpPrPC revA
FSB749
C
E
B
-
100
I
C
= 100 mA,V
CE
= 5 V, f=100MHz
Transition Frequency
f
T
pF
100
V
CB
= 10 V, I
E
= 0, f = 1MHz
Output Capacitance
C
obo
SMALL SIGNAL CHARACTERISTICS
V
1
I
C
= 1 A, V
CE
= 2 V
Base-Emitter On Voltage
V
BE(on)
V
1.25
I
C
= 1 A, I
B
= 100 mA
Base-Emitter Saturation Voltage
V
BE(sat)
mV
300
600
I
C
= 1 A, I
B
= 100 mA
I
C
= 3 A, I
B
= 300 mA
Collector-Emitter Saturation Voltage
V
CE(sat)
-
300
70
100
75
15
I
C
= 50 mA, V
CE
= 2 V
I
C
= 1 A, V
CE
= 2 V
I
C
= 2 A, V
CE
= 2 V
I
C
= 6 A, V
CE
= 2 V
DC Current Gain
h
FE
ON CHARACTERISTICS*
nA
100
V
EB
= 4V
Emitter Cutoff Current
I
EBO
nA
uA
100
10
V
CB
= 30 V
V
CB
= 30 V, T
A
=100C
Collector Cutoff Current
I
CBO
V
5
I
E
= 100
A
Emitter-Base Breakdown Voltage
BV
EBO
V
35
I
C
= 100
A
Collector-Base Breakdown Voltage
BV
CBO
V
25
I
C
= 10 mA
Collector-Emitter Breakdown Voltage
BV
CEO
OFF CHARACTERISTICS
Units
Max
Min
Test Conditions
Parameter
Symbol
PNP Low Saturation Transistor
(continued)
Electrical Characteristics
T
A = 25C unless otherwise noted
*Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
1999 Fairchild Semiconductor Corporation
fsb749.lwpPrPC revA
FSB749
DISCLAIMER
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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As used herein:
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
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Not In Production
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