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Электронный компонент: G30N120CN

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2001 Fairchild Semiconductor Corporation
HGTG30N120CN Rev. B
HGTG30N120CN
75A, 1200V, NPT Series N-Channel IGBT
The HGTG30N120CN is a
N
on-
P
unch
T
hrough (NPT) IGBT
design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49281.
Symbol
Features
75A, 1200V, T
C
= 25
o
C
1200V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . 350ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Avalanche Rated
Thermal Impedance
SPICE Model
Temperature Compensating
SABERTM Model
www.fairchildsemi.com
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG30N120CN
TO-247
G30N120CN
NOTE: When ordering, use the entire part number.
C
E
G
G
C
E
COLLECTOR
(BOTTOM SIDE
METAL)
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
December 2001
2001 Fairchild Semiconductor Corporation
HGTG30N120CN Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG30N120CN
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
1200
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
75
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
40
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
240
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
150A at 1200V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
500
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.0
W/
o
C
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AV
135
mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
260
o
C
Short Circuit Withstand Time (Note 3) at V
GE
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
8
s
Short Circuit Withstand Time (Note 3) at V
GE
= 12V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
15
s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. I
CE
= 30A, L = 400
H, T
J
= 125
o
C.
3. V
CE(PK)
= 960V, T
J
= 125
o
C, R
G
= 3
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
1200
-
-
V
Emitter to Collector Breakdown Voltage
BV
ECS
I
C
= 10mA, V
GE
= 0V
15
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= 1200V
T
C
= 25
o
C
-
-
250
A
T
C
= 125
o
C
-
600
-
A
T
C
= 150
o
C
-
-
8
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 30,
V
GE
= 15V
T
C
= 25
o
C
-
2.1
2.4
V
T
C
= 150
o
C
-
2.9
3.5
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
A, V
CE
= V
GE
6.0
6.6
-
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C, R
G
= 3
,
V
GE
= 15V,
L = 200
H, V
CE(PK)
= 1200V
150
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 30A, V
CE
= 600V
-
9.6
-
V
On-State Gate Charge
Q
G(ON)
I
C
= 30A,
V
CE
= 600V
V
GE
= 15V
-
260
325
nC
V
GE
= 20V
-
330
420
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= 30A
V
CE
= 960V
V
GE
= 15V
R
G
= 3
L = 1mH
Test Circuit (Figure 18)
-
24
30
ns
Current Rise Time
t
rI
-
21
26
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
220
260
ns
Current Fall Time
t
fI
-
180
240
ns
Turn-On Energy (Note 4)
E
ON1
-
2.2
-
mJ
Turn-On Energy (Note 4)
E
ON2
-
2.8
3.5
mJ
Turn-Off Energy (Note 5)
E
OFF
-
4.2
4.8
mJ
HGTG30N120CN
2001 Fairchild Semiconductor Corporation
HGTG30N120CN Rev. B
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= 30A
V
CE
= 960V
V
GE
= 15V
R
G
= 3
L = 1mH
Test Circuit (Figure 18)
-
22
28
ns
Current Rise Time
t
rI
-
21
26
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
260
300
ns
Current Fall Time
t
fI
-
350
400
ns
Turn-On Energy (Note 4)
E
ON1
-
2.6
-
mJ
Turn-On Energy (Note 4)
E
ON2
-
5.6
7.0
mJ
Turn-Off Energy (Note 5)
E
OFF
-
6.6
7.5
mJ
Thermal Resistance Junction To Case
R
JC
-
-
0.25
o
C/W
NOTES:
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 18.
5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
CE
,
DC COLLECT
OR CURRENT (A)
50
10
0
40
20
30
60
V
GE
= 15V
25
75
100
125
150
50
70
80
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
120
0
I
CE
,
COLLECT
OR
T
O
EMITTER CURRENT (A)
40
80
600
800
400
200
1000
1200
0
160
200
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V, L = 200
H
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
JC
= 0.25
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
T
J
= 150
o
C, R
G
= 3
, L = 1mH, V
CE
= 960V
f
MAX
,
OPERA
TING FREQ
UENCY (kHz)
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1
10
60
20
100
10
T
C
V
GE
110
o
C
12V
15V
15V
75
o
C
110
o
C
75
o
C
12V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
,
PEAK SHOR
T CIRCUIT CURRENT (A)
t
SC
,
SHOR
T CIRCUIT
WITHST
A
ND
TIME (
s)
11
12
13
14
15
16
0
10
20
30
40
100
200
300
400
t
SC
I
SC
50
500
0
V
CE
= 960V, R
G
= 3
, T
J
= 125
o
C
HGTG30N120CN
2001 Fairchild Semiconductor Corporation
HGTG30N120CN Rev. B
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
0
2
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
,
COLLECT
OR
T
O
EMITTER CURRENT (A)
0
25
50
75
6
8
10
150
125
100
175
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, V
GE
= 12V
200
225
I
CE
,
COLLECT
OR
T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
100
150
300
0
2
4
0
6
8
10
50
200
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -55
o
C
250
350
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
s
E
ON2
,

TURN-ON
ENERGY LOSS (mJ)
12.5
7.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10.0
5.0
2.5
20
10
30
25
15
5
15.0
35
40
45
0
50
55
60
T
J
= 25
o
C, V
GE
= 15V, V
GE
= 12V
T
J
= 150
o
, V
GE
= 15V, V
GE
= 12V
R
G
= 3
, L = 1mH, V
CE
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
,

TURN-OFF
ENERGY LOSS (mJ)
0
25
15
10
20
30
5
2
6
4
8
10
12
50
35
45
60
40
55
R
G
= 3
, L = 1mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
dI
,
TURN-ON DELA
Y
TIME
(ns)
10
5
15
25
15
20
25
30
35
20
40
30
40
35
45
55
50
60
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
R
G
= 3
, L = 1mH, V
CE
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
RISE TIME
(ns)
10
0
10
50
40
20
30
5
30
25
20
15
45
40
35
60
60
55
50
70
80
R
G
= 3
, L = 1mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
HGTG30N120CN
2001 Fairchild Semiconductor Corporation
HGTG30N120CN Rev. B
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
10
15
30
5
300
25
20
100
200
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
,
TURN-OFF
DELA
Y TIME
(ns)
45
40
35
600
400
500
60
55
50
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 3
, L = 1mH, V
CE
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
,
F
ALL
TIME
(ns)
10
15
30
5
0
300
400
25
20
100
200
500
600
45
40
35
T
J
= 150
o
C, V
GE
= 12V AND 15V
T
J
= 25
o
C, V
GE
= 12V AND 15V
60
55
50
700
800
R
G
= 3
, L = 1mH, V
CE
= 960V
I
CE
,
COLLECT
OR
T
O
EMITTER CURRENT (A)
0
100
200
13
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
300
400
14
15
500
T
C
= 25
o
C
T
C
= -55
o
C
T
C
= 150
o
C
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, V
CE
= 20V
V
GE
,
GA
TE
T
O
EMITTER
V
O
L
T
A
GE (V)
Q
G
, GATE CHARGE (nC)
8
4
100
2
6
0
0
250
50
150
300
200
V
CE
= 1200V
V
CE
= 800V
V
CE
= 400V
14
10
12
16
I
G(REF)
= 2mA, R
L
= 20
, T
C
= 25
o
C
C
RES
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
2
C,
CAP
A
CIT
ANCE (pF)
C
IES
4
6
8
10
FREQUENCY = 1MHz
C
OES
I
CE
,
COLLECT
OR
T
O
EMITTER CURRENT (A)
0
5
10
15
2.5
0
0.5
1.0
2.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1.5
20
25
30
3.0
35
40
DUTY CYCLE < 0.5%, T
C
= 110
o
C
V
GE
= 10V
V
GE
= 15V
PULSE DURATION = 250
s
HGTG30N120CN