GBPC 12, 15, 25, 35 SERIES
GBPC 12, 15, 25, 35 SERIES , Re
v . A
GBPC 12, 15, 25, 35 SERIES
12, 15, 25, 35 Ampere Glass Passivated Bridge Rectifiers
Absolute Maximum Ratings*
T
A
= 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
1999 Fairchild Semiconductor Corporation
Features
Integrally molded heatsink
provided very low thermal
resistance for maximum
heat dissipation.
Surge overload rartings
from 300 amperes to
400 amperes.
Isolated voltage from case
to lead over 2500 volts.
Symbol Parameter
Value Units
I
O
Averag e Rectified Curr
en t GBPC12
@ T
A
= 55
C
GBPC15
GBPC25
GBPC35
12
15
25
35
A
A
A
A
i
f(surge)
Peak F or w ard Surge C u rrent
8.3 m s single half-
sine- w a ve
GBPC12, 15, 25
Superimposed on rate
d load (JEDEC method
)
GBPC35
300
400
A
A
P
D
Total D evice Dissipati
on
Derate a bove 2 5
C
83.3
666
W
m W/
C
R
JL
Ther m a l Resistance, J u nction to Lead
1.5
C/W
T
stg
Storag e Tem perature Range -55 to +150
C
T
J
Operati n g Junction Temperature
-55 to +150
C
GBPC
GBPC-W
Dimensions are in:
inches (mm)
+
~
~
0.692(17.6)
0.612(15.5)
1.14(29.0)
1.12(28.5)
0.612(15.5)
0.692(17.6)
1.12(28.5)
1.14(29.0)
0.522(13.3)
0.602(15.3)
0.752(19.1)
0.672(17.1)
0.20(5.08)
0.22(5.59)
D I A
H OL E F OR #10 SCR EW
0.25(6.35)
0.432(10.97)
0.442(11.23)
0.85(21.5)
0.96(24.5)
0.432(10.97)
0.442(11.23)
1.2(30.5)
M I N
0.038(0.97)
0.042(1.07)
0.752(19.1)
0.672(17.1)
0.20(5.08)
0.22(5.59)
D I A
H OLE FOR #10 SC R EW
+
~
~
1.12(28.5)
1.14(29.0)
0.490(12.4)
0.410(10.4)
1.14(29.0)
1.12(28.5)
0.672(17.1)
0.752(19.1)
Suffix "W"
Wire Lead Structure
Suffix "M"
Terminal Location
Face to Face
Discrete POWER & Signal
Technologies
GBPC 12, 15, 25, 35 SERIES
GBPC 12, 15, 25, 35 SERIES , Rev. A
Glass Passivated Bridge Rectifiers
(continued)
Typical Characteristics
Forward Current Derating Curve
0
25
50
75
100
125
150
175
0
10
20
30
40
AMBIENT TEMPERATURE ( C)
FO
RW
AR
D CU
RRE
NT
(
A
)
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.0mm) LEAD
LENGTHS
GBPC35
GBPC25
GBPC12-GBPC15
Non-Repetitive Surge Current
1
2
5
10
20
50
100
20
50
100
200
400
NUMBER OF CYCLES AT 60Hz
PE
AK
F
O
R
W
A
R
D
S
URG
E
CU
RR
ENT
(
A
)
GBPC12-GBPC25
GBPC35
Forward Characteristics
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0.1
1
10
100
200
FORWARD VOLTAGE (V)
F
O
R
W
AR
D CU
RR
E
N
T
(
A
)
Pulse Width = 300
s
2% Duty Cycle
T = 25 C
A
GBPC12-GBPC15
GBPC25
GBPC35
Reverse Characteristics
0
20
40
60
80
100
120
140
0.1
1
10
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
R
EVE
R
S
E
C
U
R
R
EN
T
(
A
)
T = 25 C
A
T = 125 C
A
Electrical Characteristics
T
A
= 25C unless otherwise noted
Parameter
Device
Units
005
01
02
04
06
08
10
Peak Repetitive Reverse Voltage
50
100
200
400
600
800
1000
V
Maximum RMS Bridge Input Voltage
35
70
140
280
420
560
700
V
DC Reverse Voltage
(Rated V
R
)
50
100
200
400
600
800
1000
V
Maximum Reverse Leakage,
total bridge @ rated V
R
T
A
= 25
C
T
A
= 125
C
5.0
500
A
A
Maximum Forward Voltage Drop,
per bridge @ 6.0 A
GBPC12
@ 7.5 A
GBPC15
@ 12.5 A
GBPC25
@ 17.5 A
GBPC35
1.1
V
I
2
t rating for fusing
GBPC12,15,25
t < 8.3 ms
GBPC35
375
660
A
2
Sec
A
2
Sec
Typical Junction Capacitance, per leg
V
R
= 4.0V,
GBPC12,15,25
f = 1.0 MHz
GBPC35
180
200
pF
pF
TRADEMARKS
ACExTM
CoolFETTM
CROSSVOLTTM
E
2
CMOS
TM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
GTOTM
HiSeCTM
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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MICROWIRETM
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PowerTrenchTM
QSTM
Quiet SeriesTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
TinyLogicTM
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
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be reasonably expected to cause the failure of the life
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effectiveness.
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Definition of Terms
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This datasheet contains the design specifications for
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any manner without notice.
This datasheet contains preliminary data, and
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changes at any time without notice in order to improve
design.
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