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6/30/03
PACKAGE OUTLINE
Page 1 of 10
2003 Fairchild Semiconductor Corporation
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
DESCRIPTION
The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin
dual in-line white package.
FEATURES
H11AV1 and H11AV2 feature 0.3" input-output lead spacing
H11AV1A and H11AV2A feature 0.4" input-output lead spacing
UL recognized (File #E90700, Vol. 2)
VDE recognized (File #102497)
- Add option V (e.g., H11AV1AV-M)
APPLICATIONS
Power supply regulators
Digital logic inputs
Microprocessor inputs
SCHEMATIC
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
2
1
3
NC
5
6
4
6
1
6
6
1
1
H11AV1S-M, H11AV2S-M
H11AV1-M, H11AV2-M
H11AV1A-M, H11AV2A-M
6/30/03
Page 2 of 10
2003 Fairchild Semiconductor Corporation
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise specified)
Parameter
Symbol
Value
Units
TOTAL DEVICE
Storage Temperature
T
STG
-40 to +150
C
Operating Temperature
T
OPR
-40 to +100
C
Wave solder temperature (see page 9 for reflow solder profiles)
T
SOL
260 for 10 sec
C
Total Device Power Dissipation @ T
A
= 25C
Derate above 25C
P
D
250
mW
2.94
mW/C
EMITTER
DC/Average Forward Input Current
I
F
60
mA
Reverse Input Voltage
V
R
6
V
LED Power Dissipation @ T
A
= 25C
Derate above 25C
P
D
120
mW
1.41
mW/C
DETECTOR
Collector-Emitter Voltage
V
CEO
70
V
Collector-Base Voltage
V
CBO
70
V
Emitter-Collector Voltage
V
ECO
7
V
Detector Power Dissipation @ T
A
= 25C
Derate above 25C
P
D
150
mW
1.76
mW/C
6/30/03
Page 3 of 10
2003 Fairchild Semiconductor Corporation
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
Note
* Typical values at T
A
= 25C
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions
Symbol
Min
Typ*
Max
Unit
EMITTER
Input Forward Voltage (I
F
= 10 mA)
T
A
= 25C
V
F
0.8
1.18
1.5
V
T
A
= -55C
0.9
1.28
1.7
T
A
= 100C
0.7
1.05
1.4
Reverse Leakage Current
(V
R
= 6.0 V)
I
R
10
A
DETECTOR
Collector-Emitter Breakdown Voltage
(I
C
= 1.0 mA, I
F
= 0)
BV
CEO
70
100
V
Collector-Base Breakdown Voltage
(I
C
= 100 A, I
F
= 0)
BV
CBO
70
120
V
Emitter-Collector Breakdown Voltage
(I
E
= 100 A, I
F
= 0)
BV
ECO
7
10
V
Collector-Emitter Dark Current
(V
CE
= 10 V, I
F
= 0)
I
CEO
1
50 nA
Collector-Base Dark Current
(V
CB
= 10 V)
I
CBO
0.5
nA
Capacitance
(V
CE
= 0 V, f = 1 MHz)
C
CE
8
pF
ISOLATION CHARACTERISTICS
Characteristic
Test Conditions
Symbol
Min
Typ*
Max
Units
Input-Output Isolation Voltage
(f = 60 Hz, t = 1 sec)
V
ISO
7500
Vac(pk)
Isolation Resistance
(V
I-O
= 500 VDC)
R
ISO
10
11
Isolation Capacitance
(V
I-O
= 0 V, f = 1 MHz)
C
ISO
0.2
2
pF
6/30/03
Page 4 of 10
2003 Fairchild Semiconductor Corporation
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
* Typical values at T
A
= 25C
TRANSFER CHARACTERISTICS
(T
A
= 25C Unless otherwise specified.)
DC Characteristic
Test Conditions
Symbol
Device
Min
Typ*
Max
Unit
Current Transfer Ratio,
Collector to Emitter
(I
F
= 10 mA, V
CE
= 10 V)
CTR
H11AV1
H11AV1A
100
300
%
H11AV2
H11AV2A
50
Collector-Emitter
Saturation Voltage
(I
C
= 2 mA, I
F
= 20 mA)
V
CE (SAT)
All
0.4
V
AC Characteristic
Non-Saturated
Turn-on Time
(I
C
= 2 mA, V
CC
= 10 V, R
L
= 100
)
(Fig. 11)
T
ON
All
15
s
Non Saturated
Turn-off Time
(I
C
= 2 mA, V
CC
= 10 V, R
L
= 100
)
(Fig. 11)
T
ON
All
15
s
6/30/03
Page 5 of 10
2003 Fairchild Semiconductor Corporation
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
TYPICAL PERFORMANCE CURVES
Fig. 2 Normalized CTR vs. Forward Current
I
F
- FORWARD CURRENT (mA)
0
2
4
6
8
10
12
14
16
18
20
NOR
MALIZED CTR
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
CE
= 5.0V
T
A
= 25
C
Normalized to
I
F
= 10 mA
Fig. 3 Normalized CTR vs. Ambient Temperature
T
A
- AMBIENT TEMPERATURE (
C)
-60
-40
-20
0
20
40
60
80
100
NORMALIZED CTR
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
F
= 5 mA
I
F
= 10 mA
I
F
= 20 mA
Normalized to
I
F
= 10 mA
T
A
= 25
C
I
F
- LED FORWARD CURRENT (mA)
V
F
- FOR
W
ARD
V
O
L
T
A
GE (V)
Fig. 1 LED Forward Voltage vs. Forward Current
1
10
100
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
T
A
= 25
C
T
A
= -55
C
T
A
= 100
C
Fig. 5 CTR vs. RBE (Saturated)
R
BE
- BASE RESISTANCE (k
)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
10
100
1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5 mA
V
CE
= 0.3 V
Fig. 4 CTR vs. RBE (Unsaturated)
R
BE
- BASE RESISTANCE (k
)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
10
100
1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
CE
= 5.0 V
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5 mA
0.01
0.1
1
10
0.001
0.01
0.1
1
10
100
I
F
= 5 mA
I
F
= 20 mA
I
F
= 10 mA
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
I
C
- COLLECTOR CURRENT (mA)
V
CE (SA
T)
- COLLECT
OR-EMITTER SA
TURA
TION
V
O
L
T
A
G
E (V)
I
F
= 2.5 mA
T
A
= 25C