2001 Fairchild Semiconductor Corporation
HRFZ44N Rev. B
HRFZ44N
49A, 55V, 0.022 Ohm, N-Channel UltraFET
Power MOSFET
This N-Channel power MOSFET is
manufactured using the innovative
UltraFETTM process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75329.
Features
49A, 55V
Simulation Models
- Temperature Compensated PSPICE
and SABER
Electrical Models
- Spice and Saber Thermal Impedance Models
- www.Fairchild.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HRFZ44N
TO-220AB
HRFZ44N
NOTE: When ordering, use the entire part number.
D
G
S
DRAIN
SOURCE
GATE
DRAIN
(FLANGE)
Data Sheet
December 2001
2001 Fairchild Semiconductor Corporation
HRFZ44N Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
55
V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
55
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
49
160
A
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
0.227
A
2
s
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120
0.8
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
2. Repetitive rating: pulse width limited by maximum junction temperature.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V (Figure 11)
55
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 50V, V
GS
= 0V
-
-
1
A
V
DS
= 45V, V
GS
= 0V, T
C
= 150
o
C
-
-
250
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A (Figure 10)
2
-
4
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 25A, V
GS
= 10V (Figure 9)
-
0.019
0.022
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
JC
(Figure 3)
-
-
1.25
o
C/W
Thermal Resistance Junction to Ambient
R
JA
TO-220
-
-
62
o
C/W
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
V
DD
= 30V, I
D
25A,
R
L
= 1.2
, V
GS
=
10V,
R
GS
= 9.1
-
-
105
ns
Turn-On Delay Time
t
d(ON)
-
12
-
ns
Rise Time
t
r
-
58
-
ns
Turn-Off Delay Time
t
d(OFF)
-
33
-
ns
Fall Time
t
f
-
33
-
ns
Turn-Off Time
t
OFF
-
-
100
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 20V
V
DD
= 30V,
I
D
25A,
R
L
= 1.2
I
g(REF)
= 1.0mA
(Figure 13)
-
60
75
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0V to 10V
-
35
43
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
2.0
2.5
nC
Gate to Source Gate Charge
Q
gs
-
4
-
nC
Gate to Drain "Miller" Charge
Q
gd
-
14
-
nC
HRFZ44N
2001 Fairchild Semiconductor Corporation
HRFZ44N Rev. B
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 12)
-
1060
-
pF
Output Capacitance
C
OSS
-
405
-
pF
Reverse Transfer Capacitance
C
RSS
-
95
-
pF
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 25A
-
-
1.25
V
Reverse Recovery Time
t
rr
I
SD
= 25A, dI
SD
/dt = 100A/
s
-
-
72
ns
Reverse Recovered Charge
Q
RR
I
SD
= 25A, dI
SD
/dt = 100A/
s
-
-
120
nC
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
175
I
D
,
DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
10
20
30
50
50
75
100
125
150
175
0
25
40
60
t, RECTANGULAR PULSE DURATION (s)
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-5
0.1
1
2
0.01
Z
JC
,
NORMALIZED
THERMAL IMPED
ANCE
HRFZ44N
2001 Fairchild Semiconductor Corporation
HRFZ44N Rev. B
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
Typical Performance Curves
(Continued)
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
100
1000
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
I
DM
,
PEAK CURRENT (A)
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
100
500
10
100
1
1
200
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT (A)
T
J
= MAX RATED
T
C
= 25
o
C
100
s
10ms
1ms
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
BV
DS
MAX
= 55V
0.1
10
0.001
500
10
I
AS
,
A
V
ALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0.01
1
100
0
2
3
5
I
D
,
DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 10V
V
GS
= 20V
T
C
= 25
o
C
V
GS
= 5V
V
GS
= 8V
0
20
40
100
4
1
80
60
V
GS
= 6V
V
GS
= 7V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0
3.0
4.5
6.0
7.5
1.5
0
20
40
I
D
,
DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
25
o
C
V
DD
= 15V
100
60
80
-55
o
C
175
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
HRFZ44N
2001 Fairchild Semiconductor Corporation
HRFZ44N Rev. B
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
1.0
1.5
2.0
2.5
-40
0
40
80
120
160
200
0.5
-80
NORMALIZED DRAIN
T
O
SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESIST
ANCE
V
GS
= 10V, I
D
= 49A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0.8
1.0
1.2
-40
0
40
80
120
160
200
0.6
-80
NORMALIZED GA
TE
T
J
, JUNCTION TEMPERATURE (
o
C)
THRESHOLD V
O
L
T
A
G
E
V
GS
= V
DS
, I
D
= 250
A
0.4
0.9
1.0
1.1
1.2
-40
0
40
80
120
160
200
-80
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN
T
O
SOURCE
I
D
= 250
A
BREAKDO
WN V
O
L
T
A
G
E
0.8
1200
600
0
0
10
20
30
40
50
C,
CAP
A
CIT
ANCE (pF)
900
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
300
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
60
1500
1800
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
C
ISS
10
8
6
4
0
V
GS
,
GA
TE
T
O
SOURCE
V
O
L
T
A
GE (V)
V
DD
= 30V
2
15
20
35
0
Q
g
, GATE CHARGE (nC)
5
10
I
D
= 49A
I
D
= 36.75A
I
D
= 24.5A
WAVEFORMS IN
DESCENDING ORDER:
25
30
I
D
= 12.25A
HRFZ44N
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