2001 Fairchild Semiconductor Corporation
IRF640, RF1S640, RF1S640SM Rev. B
IRF640, RF1S640, RF1S640SM
18A, 200V, 0.180 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17422.
Features
18A, 200V
r
DS(ON)
= 0.180
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speed
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
JEDEC TO-262AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF640
TO-220AB
IRF640
RF1S640
TO-262AA
RF1S640
RF1S640SM
TO-263AB
RF1S640
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S640SM9A.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
SOURCE
GATE
DRAIN
(FLANGE)
Data Sheet
January 2002
2001 Fairchild Semiconductor Corporation
IRF640, RF1S640, RF1S640SM Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF640, RF1S640, RF1S640SM
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
200
V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
200
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
18
11
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
72
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
125
W
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0
W/
o
C
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
580
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V, (Figure 10)
200
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
25
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
-
-
250
A
On-State Drain Current (Note 1)
I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V (Figure 7)
18
-
-
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
Drain to Source On Resistance (Note 1)
r
DS(ON)
I
D
= 10A, V
GS
= 10V (Figures 8, 9)
-
0.14
0.18
Forward Transconductance (Note 1)
g
fs
V
DS
10V, I
D
= 11A (Figure 12)
6.7
10
-
S
Turn-On Delay Time
t
d(ON)
V
DD
= 100V, I
D
18A, R
GS
= 9.1
, R
L
= 5.4
,
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-
13
21
ns
Rise Time
t
r
-
50
77
ns
Turn-Off Delay Time
t
d(OFF)
-
46
68
ns
Fall Time
t
f
-
35
54
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 10V, I
D
18A, V
DS
= 0.8 x Rated BV
DSS
(Figure 14) Gate Charge is Essentially Independent
of Operating Temperature
I
G(REF)
= 1.5mA
-
43
64
nC
Gate to Source Charge
Q
gs
-
8
-
nC
Gate to Drain "Miller" Charge
Q
gd
-
22
-
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 11)
-
1275
-
pF
Output Capacitance
C
OSS
-
400
-
pF
Reverse Transfer Capacitance
C
RSS
-
100
-
pF
Internal Drain Inductance
L
D
Measured From the
Contact Screw on Tab to
Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
3.5
-
nH
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die
-
4.5
-
nH
Internal Source Inductance
L
S
Measured From the
Source Lead, 6mm
(0.25in) from Header to
Source Bonding Pad
-
7.5
-
nH
Thermal Resistance Junction to Case
R
JC
-
-
1
o
C/W
Thermal Resistance Junction to
Ambient
R
JA
Free Air Operation, IRF640
-
-
62
o
C/W
R
JA
RF1S640SM Mounted on FR-4 Board with Minimum
Mounting Pad
-
-
62
o
C/W
L
S
L
D
G
D
S
IRF640, RF1S640, RF1S640SM
2001 Fairchild Semiconductor Corporation
IRF640, RF1S640, RF1S640SM Rev. B
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
-
-
18
A
Pulse Source to Drain Current
(Note 2)
I
SDM
-
-
72
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= 18A, V
GS
= 0V, (Figure 13)
-
-
2.0
V
Reverse Recovery Time
t
rr
T
J
= 25
o
C, I
SD
= 18A, dI
SD
/dt = 100A/
s
120
240
530
ns
Reverse Recovery Charge
Q
RR
T
J
= 25
o
C, I
SD
= 18A, dI
SD
/dt = 100A/
s
1.3
2.8
5.6
C
NOTES:
2. Pulse Test: Pulse width
300
s, duty cycle
2%.
3. Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 3.37mH, R
G
= 25
,
peak I
AS
= 18A.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
PO
WE
R DI
SSI
P
A
T
I
O
N
M
U
L
T
I
P
LI
ER
0.2
0.4
0.6
0.8
1.0
1.2
8
4
0
25
50
75
100
125
150
16
I
D
, DRAI
N CURRENT
(
A
)
T
C
, CASE TEMPERATURE (
o
C)
20
12
t
P
, RECTANGULAR PULSE DURATION (s)
10
Z
JC
, T
RANSIENT
T
H
ERM
A
L
IM
PED
ANCE
(
o
C/W)
10
-3
10
-2
10
-1
1
10
-5
10
-4
10
0.01
0.1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
+ T
C
P
DM
t
1
t
2
0.001
1
SINGLE PULSE
0.1
0.02
0.2
0.5
0.01
0.05
IRF640, RF1S640, RF1S640SM
2001 Fairchild Semiconductor Corporation
IRF640, RF1S640, RF1S640SM Rev. B
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
1
10
1
I
D
, DRAIN
CURRENT
(
A
) 100
100
T
C
= 25
o
C
SINGLE PULSE
1000
OPERATION IN THIS AREA MAY BE
LIMITED BY r
DS(ON)
DC
100
s
10
s
1ms
10ms
T
C
= 25
o
C
1000
T
J
= MAX RATED
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN C
URRENT
(
A
)
0
0
12
24
36
48
6
12
18
24
30
60
7V
6V
5V
4V
10V
8V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0
6
0
1.0
2.0
3.0
5.0
12
18
I
D
,
DRAIN CURRENT
(
A
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 6V
24
4.0
V
GS
= 7V
30
V
GS
= 8V
V
GS
= 10V
V
GS
= 5V
V
GS
= 4V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0
4
6
8
10
2
0.1
1
10
I
D
, DRAIN
CURRENT
(
A
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
100
150
o
C
25
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DS
50V
0
0.6
0.9
1.2
15
30
45
60
r
DS(O
N)
, DRAIN
T
O
SOUR
CE
I
D
, DRAIN CURRENT (A)
75
1.5
0
0.3
V
GS
= 10V
V
GS
= 20V
O
N
RESIST
ANCE (
)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
NO
RM
AL
IZ
E
D
DRAIN T
O
SOURCE
3.0
1.8
1.2
0.6
0
-60 -40
-20
0
20
40
60
T
J
, JUNCTION TEMPERATURE (
o
C)
100 120 140
160
2.4
80
ON RESIST
ANCE
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 18A
IRF640, RF1S640, RF1S640SM
2001 Fairchild Semiconductor Corporation
IRF640, RF1S640, RF1S640SM Rev. B
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
1.25
1.05
0.95
0.85
0.75
-60
-40
-20
0
20
40
60
T
J
, JUNCTION TEMPERATURE (
o
C)
NO
RM
AL
IZ
ED
DRAIN T
O
SOURCE
BREAKDO
WN V
O
L
T
A
G
E
100 120 140 160
1.15
80
I
D
= 250
A
3000
600
0
1
10
100
C, CAP
A
C
I
T
ANCE
(
p
F
)
1800
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2400
1200
C
ISS
C
OSS
C
RSS
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
V
GS
= 0V, f = 1MHz
25
o
C
I
D
, DRAIN CURRENT (A)
g
fs
, T
RANSCONDUCT
A
NCE
(
S
)
0
0
6
12
18
24
3
6
9
12
15
30
150
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0
0.8
1.2
1.6
2.0
0.4
1
10
100
I
SD
, SOUR
CE
T
O
DRA
IN CURRENT
(
A
)
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
1000
25
o
C
150
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
Q
g
, GATE CHARGE (nC)
V
GS
, G
A
T
E
T
O
SOURCE V
O
L
T
A
G
E
(
V
)
0
0
15
30
45
60
4
8
12
16
20
75
I
D
= 28A
V
DS
= 100V
V
DS
= 160V
V
DS
= 40V
IRF640, RF1S640, RF1S640SM
PDF 
ZIP