www.docs.chipfind.ru
2002 Fairchild Semiconductor Corporation
IRFD9110 Rev. B
IRFD9110
0.7A, 100V, 1.200 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17541.
Features
0.7A, 100V
r
DS(ON)
= 1.2
00
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Symbol
Packaging
HEXDIP
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFD9110
HEXDIP
IRFD9110
NOTE: When ordering, use the entire part number.
G
D
S
SOURCE
GATE
DRAIN
Data Sheet
January 2002
2002 Fairchild Semiconductor Corporation
IRFD9110 Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFD9110
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
-100
V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
-100
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
-0.7
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
-3.0
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
1.0
W
Dissipation Derating Factor (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.008
W/
o
C
Single Pulse Avalanche Energy Rating (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
190
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= -250
A, V
GS
= 0V, (Figure 9)
-100
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= -250
A
-2
-
-4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
-25
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
-
-
-250
A
On-State Drain Current (Note 2)
I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON)MAX,
V
GS
= -10V,
(Figure 6)
-0.7
-
-
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= -0.3A, V
GS
= -10V, (Figures 8)
-
1.000
1.200
Forward Transconductance (Note 2)
gfs
V
DS
50V, I
D
= -0.6A, (Figure 11)
0.59
0.88
-
S
Turn-On Delay Time
t
d(ON)
V
DD
= 0.5 x Rated BV
DSS,
I
D
= -0.7A, R
G
= 9.1
,
V
GS
=-10V, (Figures 16, 17),
R
L
= 70
for V
DSS
= 50V
R
L
= 56
for V
DSS
= 40V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-
15
30
ns
Rise Time
t
r
-
30
60
ns
Turn-Off Delay Time
t
d(OFF)
-
20
40
ns
Fall Time
t
f
-
20
40
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= -10V, I
D
= -0.7A, V
DS
= 0.8V x Rated BV
DSS,
(Figures 13, 18, 19) Gate Charge is
Essentially Independent of Operating
Temperature
-
11
15
nC
Gate to Source Charge
Q
gs
-
5.7
-
nC
Gate to Drain "Miller" Charge
Q
gd
-
5.3
-
nC
Input Capacitance
C
ISS
V
DS
= -25V, V
GS
= 0V, f = 1MHz, (Figure 10)
-
180
-
pF
Output Capacitance
C
OSS
-
85
-
pF
Reverse Transfer Capacitance
C
RSS
-
30
-
pF
Internal Drain Inductance
L
D
Measured From the Drain
Lead, 2mm (0.08in) From
Package to Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
4.0
-
nH
Internal Source Inductance
L
S
Measured From the
Source Lead, 2mm
(0.08in) From Header to
Source Bonding Pad
-
6.0
-
nH
Thermal Resistance Junction to Ambient
R
JA
Typical Socket Mount
-
-
120
o
C/W
L
S
L
D
G
D
S
IRFD9110
2002 Fairchild Semiconductor Corporation
IRFD9110 Rev. B
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
-
-
-0.7
A
Pulse Source to Drain Current
(Note 3)
I
SDM
-
-
-3.0
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= -0.7A, V
GS
= 0V, (Figure 12)
-
-
-1.5
V
Reverse Recovery Time
t
rr
T
J
= 150
o
C, I
SD
= -0.7A, dI
SD
/dt = 100A/
s
-
120
-
ns
Reverse Recovery Charge6466
Q
RR
T
J
= 150
o
C, I
SD
= -0.7A, dI
SD
/dt = 100A/
s
-
6.0
-
C
NOTES:
2. Pulse test: pulse width
300
s, duty cycle
2%.
3. V
DD
= 25V, starting T
J
= 25
o
C, L = 582mH, R
G
= 25
,
peak I
AS
= 0.7A. See Figures 14, 15.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. OUTPUT CHARACTERISTICS
G
D
S
T
A
, AMBIENT TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0.0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
T
A
, AMBIENT TEMPERATURE (
o
C)
50
75
100
25
150
-1.0
-0.8
-0.6
0
-0.4
I
D,
DRAIN CURRENT (A)
-0.2
125
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
I
D
,
DRAIN CURRENT (A)
100
0.1
10
1
0.01
10
s
DC
1ms
10ms
100ms
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED
T
C
= 25
o
C
100
s
I
D
,
DRAIN CURRENT (A)
0
-10
-20
-30
-40
-1
-2
-3
-4
-5
-50
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
V
GS
= -5V
V
GS
= -7V
V
GS
= -8V
V
GS
= -10V
V
GS
= -9V
V
GS
= -6V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
IRFD9110
2002 Fairchild Semiconductor Corporation
IRFD9110 Rev. B
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
s is minimal.
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
0
-1
0
-2
-4
-6
-10
-2
-3
I
D
,
DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-4
-8
-5
V
GS
= -5V
V
GS
= -7V
V
GS
= -8V
V
GS
= -9V
V
GS
= -10V
V
GS
= -6V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
-12.0
I
D(ON)
,
ON-ST
A
TE DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
-9.6
-7.2
-4.8
0
-8
-6
-4
-2
0
-10
-2.4
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0
2
5
-1
-2
DRAIN
T
O
SOURCE ON RESIST
ANCE (
)
I
D
, DRAIN CURRENT (A)
-3
1
3
4
V
GS
= -10V
V
GS
= -20V
2
s PULSE TEST
0
NORMALIZED DRAIN
T
O
SOURCE
2.5
1.5
1.0
0.5
0
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
160
2.0
80
V
GS
= -10V, I
D
= -0.3A
ON RESIST
ANCE
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
1.25
0.95
0.85
0.75
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN
T
O
SOURCE
BREAKDO
WN V
O
L
T
A
G
E
80
120
160
1.05
1.15
I
D
= 250
A
500
100
0
0
-20
-50
C,
CAP
A
CIT
ANCE (pF)
300
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
400
200
-10
-30
C
ISS
C
OSS
C
RSS
-40
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
IRFD9110
2002 Fairchild Semiconductor Corporation
IRFD9110 Rev. B
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
I
D
, DRAIN CURRENT (A)
g
fs
,
TRANSCONDUCT
ANCE
(S)
0
-1.2
-2.4
-3.6
-4.8
0.5
1.0
1.5
2.0
2.5
-6.0
0
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
-0.4
-1.0
-1.2
-1.6
-1.8
-0.6
-0.1
-1.0
-10
I
SD
,
DRAIN CURRENT (A)
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
-100
-0.8
-1.4
T
J
= 25
o
C
T
J
= 150
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
V
GS
,
GA
TE
T
O
SOURCE (V)
0
4
6
10
-15
- 5
5
I
D
= -0.7A
0
-10
-20
2
8
V
DS
= -80V
V
DS
= -50V
V
DS
= -20V
t
P
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
GS
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
IRFD9110
2002 Fairchild Semiconductor Corporation
IRFD9110 Rev. B
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
FIGURE 18. GATE CHARGE TEST CIRCUIT
FIGURE 19. GATE CHARGE WAVEFORMS
Test Circuits and Waveforms
(Continued)
V
GS
R
L
R
G
DUT
+
-
V
DD
t
d(ON)
t
r
90%
10%
V
DS
90%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
10%
0
0
0.3
F
12V
BATTERY
50k
+V
DS
S
DUT
D
G
I
G(REF)
0
(ISOLATED
-V
DS
0.2
F
CURRENT
REGULATOR
I
D
CURRENT
SAMPLING
I
G
CURRENT
SAMPLING
SUPPLY)
RESISTOR
RESISTOR
DUT
Q
g(TOT)
Q
gd
Q
gs
V
DS
0
V
GS
V
DD
0
I
G(REF)
IRFD9110
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
OPTOLOGICTM
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerTrench
QFETTM
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
SILENT SWITCHER
FAST
FASTrTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
ISOPLANARTM
LittleFETTM
MicroFETTM
MicroPakTM
MICROWIRETM
Rev. H4
ACExTM
BottomlessTM
CoolFETTM
CROSSVOLTTM
DenseTrenchTM
DOMETM
EcoSPARKTM
E
2
CMOS
TM
EnSigna
TM
FACTTM
FACT Quiet SeriesTM
SMART STARTTM
STAR*POWERTM
StealthTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogicTM
TruTranslationTM
UHCTM
UltraFET
STAR*POWER is used under license
VCXTM
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