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IRFM120A
BV
DSS
= 100 V
R
DS(on)
= 0.2
!
I
D
= 2.3 A
100
2.3
1.84
18
"
20
123
2.3
0.24
6.5
2.4
0.019
- 55 to +150
300
52
--
!
Avalanche Rugged Technology
!
Rugged Gate Oxide Technology
!
Lower Input Capacitance
!
Improved Gate Charge
!
Extended Safe Operating Area
!
Lower Leakage Current : 10
#
A (Max.) @ V
DS
= 100V
!
Lower R
DS(ON)
: 0.155
!
(Typ.)
Advanced Power MOSFET
FEATURES
SOT-223
1. Gate 2. Drain 3. Source
2
1
3
*
When mounted on the minimum pad size recommended (PCB Mount).
Thermal Resistance
Junction-to-Ambient
R
$
JA
%
/W
Characteristic
Max.
Units
Symbol
Typ.
*
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
A
=25
%
)
Continuous Drain Current (T
A
=70
%
)
Drain Current-Pulsed
&
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
'
Avalanche Current
&
Repetitive Avalanche Energy
&
Peak Diode Recovery dv/dt
(
Total Power Dissipation (T
A
=25
%
)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds
Characteristic
Value
Units
Symbol
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
%
A
%
V
DSS
V
*
P
D
*
IEEE802.3af Compatible
Rev. C
IRFM120A
100
--
2.0
--
--
--
--
--
--
0.12
--
--
--
--
--
--
95
38
14
14
36
28
16
2.7
7.8
--
--
4.0
100
-100
1
10
100
0.2
--
480
110
45
40
40
90
70
22
--
--
3.12
370
--
--
--
98
0.34
2.3
18
1.5
--
--
Notes ;
&
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
'
L=35mH, I
AS
=2.3A, V
DD
=25V, R
G
=27
)
, Starting T
J
=25
%
(
I
SD
*
9.2A, di/dt
*
300A/
#
s, V
DD
*
BV
DSS
, Starting T
J
=25
%
+
Pulse Test : Pulse Width = 250
#
s, Duty Cycle
*
2%
,
Essentially Independent of Operating Temperature
-
Adjusted for Cisco
N-CHANNEL
POWER MOSFET
Electrical Characteristics
(T
A
=25
%
unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain("Miller") Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
BV
DSS
.
BV/
.
T
J
V
GS(th)
R
DS(on)
I
GSS
I
DSS
V
V/
%
V
nA
#
A
)
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250
#
A
I
D
=250
#
A See Fig 7
V
DS
=5V,I
D
=250
#
A
V
GS
=20V
V
GS
=-20V
V
DS
=30V
-
V
DS
=100V
V
DS
=80V,T
A
=125
%
V
GS
=10V,I
D
=1.15A
+
V
DS
=40V,I
D
=1.15A
+
V
DD
=50V,I
D
=9.2A,
R
G
=18
)
See Fig 13
+ ,
V
DS
=80V,V
GS
=10V,
I
D
=9.2A
See Fig 6 & Fig 12
+ ,
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
&
Diode Forward Voltage
+
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
#
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
%
,I
S
=2.3A,V
GS
=0V
T
J
=25
%
,I
F
=9.2A
di
F
/dt=100A/
#
s
+
S
IRFM120A
2
4
6
8
10
10
-1
10
0
10
1
25
o
C
150
o
C
- 55
o
C
@ Notes :
1. V
GS
= 0 V
2. V
DS
= 40 V
3. 250
"
s Pulse Test
I
D
,
Drain
Curr
ent
[A]
V
GS
, Gate-Source Voltage [V]
0
10
20
30
40
0.0
0.1
0.2
0.3
0.4
@ Note : T
J
= 25
o
C
V
GS
= 20 V
V
GS
= 10 V
R
DS
(o
n)
, [
#
]
Dr
ai
n-
So
ur
ce
O
n
-
Res
is
ta
nc
e
I
D
, Drain Current [A]
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
10
-1
10
0
10
1
150
o
C
25
o
C
@ Notes :
1. V
GS
= 0 V
2. 250
"
s Pulse Test
I
DR
,
Rever
se Dr
ain C
urren
t [A
]
V
SD
, Source-Drain Voltage [V]
10
0
10
1
0
200
400
600
C
iss
= C
gs
+ C
gd
(
C
ds
= shorted
)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
@ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Ca
pa
ci
ta
nc
e
[
p
F
]
V
DS
, Drain-Source Voltage [V]
0
5
10
15
20
0
5
10
V
DS
= 80 V
V
DS
= 50 V
V
DS
= 20 V
@ Notes : I
D
= 9.2 A
V
GS
,
Gate-
Sourc
e Vol
tage
[V]
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
10
0
10
1
@ Notes :
1. 250
"
s Pulse Test
2. T
A
= 25
o
C
V
GS
Top : 1 5 V
1 0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
I
D
, Dr
ai
n Cu
rr
en
t [A
]
V
DS
, Drain-Source Voltage [V]
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source Voltage
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward Voltage
Fig 3. On-Resistance vs. Drain Current
IRFM120A
-75
-50
-25
0
25
50
75
100
125
150
175
0.8
0.9
1.0
1.1
1.2
@ Notes :
1. V
GS
= 0 V
2. I
D
= 250
"
A
BV
DS
S
,
(
Nor
mal
iz
ed)
Dr
ai
n-S
our
ce
Br
ea
kdo
wn
Vo
lta
ge
T
J
, Junction Temperature [
o
C]
-75
-50
-25
0
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
@ Notes :
1. V
GS
= 10 V
2. I
D
= 4.6 A
R
DS
(o
n)
,
(No
rma
liz
ed)
Dr
ain-
Sou
rce
On-
Res
ist
ance
T
J
, Junction Temperature [
o
C]
10
-1
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
100 ms
10
"
s
DC
100
"
s
1 ms
10 ms
@ Notes :
1. T
A
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
Operation in This Area
is Limited by R
DS(on)
I
D
,
D
rai
n C
u
r
ren
t
[A
]
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
I
D
,
Dra
in
Cur
rent
[
A
]
T
A
, Ambient Temperature [
o
C]
10
- 5
10
- 4
10
- 3
10
- 2
10
- 1
10
0
10
1
10
2
10
3
10
- 1
10
0
10
1
10
2
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. Z
!
J A
(t)=52
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
J M
-T
A
=P
D M
*Z
!
J A
(t)
Z
!
JA
(t)
,
Therm
al R
espon
se
t
1
, Square Wave Pulse Duration [sec]
N-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
Fig 11. Thermal Response
Fig 10. Max. Drain Current vs. Ambient Temperature
Fig 9. Max. Safe Operating Area
P
DM
t
1
t
2
IRFM120A
N-CHANNEL
POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
Fig 13. Resistive Switching Test Circuit & Waveforms
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
E
AS
=
L
L
I
AS
2
----
2
1
--------------------
BV
DSS
-- V
DD
BV
DSS
V
in
V
out
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
Vary t
p
to obtain
required peak I
D
10V
V
DD
C
L
L
V
DS
I
D
R
G
t
p
DUT
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
V
DD
( 0.5 rated V
DS
)
10V
V
out
V
in
R
L
DUT
R
G
3mA
V
GS
Current Sampling (I
G
)
Resistor
Current Sampling (I
D
)
Resistor
DUT
V
DS
300nF
50K!
200nF
12V
Same Type
as DUT
* Current Regulator "
R
1
R
2
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