2002 Fairchild Semiconductor Corporation
February 2002
Rev. A, February 2002
I
R
F
P
460C
IRFP460C
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies and
power factor corrections.
Features
20A, 500V, R
DS(on)
= 0.24
@V
GS
= 10 V
Low gate charge ( typical 130nC)
Low Crss ( typical 60 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
IRFP460C
Units
V
DSS
Drain-Source Voltage
500
V
I
D
Drain Current
- Continuous (T
C
= 25C)
20
A
- Continuous (T
C
= 100C)
12.5
A
I
DM
Drain Current
- Pulsed
(Note 1)
80
A
V
GSS
Gate-Source Voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
1050
mJ
I
AR
Avalanche Current
(Note 1)
20
A
E
AR
Repetitive Avalanche Energy
(Note 1)
23.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation (T
C
= 25C)
235
W
- Derate above 25C
1.88
W/C
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +150
C
T
L
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
300
C
Symbol
Parameter
Typ
Max
Units
R
JC
Thermal Resistance, Junction-to-Case
--
0.53
C
/
W
R
CS
Thermal Resistance, Case-to-Sink
0.24
--
C
/
W
R
JA
Thermal Resistance, Junction-to-Ambient
--
40
C
/
W
TO-3P
IRFP Series
G
S
D
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
!
D
G
S
Rev. A, February 2002
I
R
F
P
460C
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
2002 Fairchild Semiconductor Corporation
Electrical Characteristics
T
C
= 25C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.1mH, I
AS
= 20A, V
DD
= 50V, R
G
= 25
,
Starting T
J
= 25C
3. I
SD
20A, di/dt
200A/
s, V
DD
BV
DSS,
Starting T
J
= 25C
4. Pulse Test : Pulse width
300
s, Duty cycle
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
A
500
--
--
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25C
--
0.55
--
V/C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 500 V, V
GS
= 0 V
--
--
10
A
V
DS
= 400 V, T
C
= 125C
--
--
100
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30 V, V
DS
= 0 V
--
--
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30 V, V
DS
= 0 V
--
--
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
2.0
--
4.0
V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 10.0 A
--
0.2
0.24
g
FS
Forward Transconductance
V
DS
= 50 V, I
D
= 10.0 A
--
18
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
4590
6000
pF
C
oss
Output Capacitance
--
380
460
pF
C
rss
Reverse Transfer Capacitance
--
60
80
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 250 V, I
D
= 20 A,
R
G
= 25
--
50
120
ns
t
r
Turn-On Rise Time
--
150
310
ns
t
d(off)
Turn-Off Delay Time
--
380
770
ns
t
f
Turn-Off Fall Time
--
180
370
ns
Q
g
Total Gate Charge
V
DS
= 400 V, I
D
= 20 A,
V
GS
= 10 V
--
130
170
nC
Q
gs
Gate-Source Charge
--
20
--
nC
Q
gd
Gate-Drain Charge
--
45
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
20
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
80
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 20 A
--
--
1.4
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 20 A,
dI
F
/ dt = 100 A/
s
--
480
--
ns
Q
rr
Reverse Recovery Charge
--
7.7
--
C
Rev. A, February 2002
2002 Fairchild Semiconductor Corporation
I
R
F
P
460C
Dimensions in Millimeters
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
-1
10
0
10
1
150
Notes :
1. V
GS
= 0V
2. 250
s Pulse Test
25
I
DR
,
R
e
v
e
r
s
e
D
r
ai
n C
u
r
r
en
t
[
A
]
V
SD
, Source-Drain voltage [V]
0
10
20
30
40
50
60
70
80
90
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
DS
(
O
N)
[
],
D
r
a
i
n-
Sour
ce
O
n
-
R
es
i
s
t
anc
e
I
D
, Drain Current [A]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
0
30
60
90
120
150
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 100V
V
DS
= 400V
Note : I
D
= 20.0 A
V
GS
,
G
a
t
e
-
S
ou
r
c
e V
o
l
t
age [
V
]
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
2000
4000
6000
8000
10000
C
oss
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
iss
C
a
p
a
c
i
t
anc
e [
p
F]
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
10
2
150
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 50V
2. 250
s Pulse Test
I
D
, D
r
a
i
n
C
u
r
r
e
n
t
[A
]
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Notes :
1. 250
s Pulse Test
2. T
C
= 25
I
D
,
D
r
ai
n C
u
r
r
ent
[
A
]
V
DS
, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Rev. A, February 2002
2002 Fairchild Semiconductor Corporation
I
R
F
P
460C
Dimensions in Millimeters
25
50
75
100
125
150
0
5
10
15
20
25
I
D
,
D
r
ai
n C
u
r
r
ent
[
A
]
T
C
, Case Temperature [
]
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 11. Transient Thermal Response Curve
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N o te s :
1 . Z
J C
(t) = 0 .5 3
/W M a x .
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
J C
(t)
s in g le p u ls e
D = 0 .5
0 . 0 2
0 . 2
0 . 0 5
0 . 1
0 . 0 1
Z
JC
(
t
)
,
Ther
m
a
l
R
e
s
pons
e
t
1
, S q u a r e W a v e P u ls e D u ra tio n [s e c ]
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
s
DC
10 ms
1 ms
100
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
,
D
r
ai
n C
u
r
r
en
t
[
A
]
V
DS
, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
GS
= 10 V
2. I
D
= 20.0 A
R
DS
(
O
N)
, (
N
o
r
m
a
li
z
e
d
)
D
r
ai
n-
S
our
ce
O
n
-
R
e
s
i
s
t
anc
e
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250
A
BV
DS
S
,
(
N
or
m
a
l
i
z
ed)
D
r
ai
n-
S
our
ce B
r
e
a
k
d
ow
n V
o
l
t
ag
e
T
J
, Junction Temperature [
o
C]
P
DM
t
1
t
2
P
DM
t
1
t
2
t
1
t
2
Figure 8. On-Resistance Variation
vs Temperature
Rev. A, February 2002
2002 Fairchild Semiconductor Corporation
I
R
F
P
460C
Dimensions in Millimeters
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
E
AS
=
L I
AS
2
----
2
1
--------------------
BV
DSS
- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V
DUT
R
G
L
I
D
t
p
E
AS
=
L I
AS
2
----
2
1
E
AS
=
L I
AS
2
----
2
1
----
2
1
--------------------
BV
DSS
- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V
DUT
R
G
L
L
I
D
I
D
t
p
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
PDF 
ZIP