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IRFU410A
TO-220
1.Gate 2. Drain 3. Source
Improved Inductive Ruggedness
Rugged Polysilicon Gate Cell Structure
Fast Switching Times
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Improved High Temperature Reliability
Advanced Power MOSFET
IRFU410A
BV
DSS
= 520 V
R
DS(on)
= 10.0
I
D
= 1.2 A
Thermal Resistance
Absolute Maximum Ratings
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
R
JC
R
CS
R
JA
3.0
--
110
/W
Characteristic
Max.
Units
Symbol
Typ.
--
1.7
--
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 )
Continuous Drain Current (T
C
=100 )
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25 )
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds
Characteristic
Value
Units
Symbol
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
A
520
1.2
0.8
4.0
40
1.2
4.2
3.5
42
0.33
-55 to +150
300
V
DSS
V
2
0
+
_
O
1
O
2
O
3
C
C
O
1
O
1
C
C
C
C
1999 Fairchild Semiconductor Corporation
Rev. B
IRFU410A
N-CHANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25 unless otherwise specified)
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=40mH, V
dd
=25V, R
G
=25 , Starting T
J
=25
dv/dt Test Condition
Pulse Test : Pulse Width = 250 s, Duty Cycle 2%
Essentially Independent of Operating Temperature
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Max. Units
Symbol
Typ.
Min.
Test Condition
--
--
--
--
--
--
--
--
350
506
1.2
4.0
1.15
--
-
A
V
ns
C
Integral reverse pn-diode
in the MOSFET
T
J
=25 ,I
S
=1.2A,V
GS
= 0V
T
J
=25 ,I
F
=1.2A
di
F
/dt=100A/ s
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain("Miller") Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
BV
DSS
BV/ T
J
V
GS(th)
R
DS(on)
I
GSS
I
DSS
V
V/
V
nA
A
pF
ns
nC
520
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.60
--
--
--
--
--
--
-
-
-
-
-
-
--
4.5
9.5
--
--
4.0
100
-100
10
1000
10
--
300
80
40
20
30
60
45
21
--
--
V
GS
=0V,I
D
=250 A
I
D
=250 A See Fig 7
V
DS
=4V,I
D
=250 A
V
GS
=30V
V
GS
=-30V
V
DS
=520V
V
DS
=416V,T
C
=125
V
GS
=10V,I
D
=0.6A
V
DS
50V,I
D
=0.6A
V
DD
=260V,I
D
=1.2A,R
G
=9.1
See Fig 13
V
DS
=416V,V
GS
=10V,I
D
=1.2A
See Fig 6 & Fig 12
0.70
-
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
C
O
4
O
5
C
C
O
4
O
4
O
4
O
4
O
1
C
C
O
5
O
4
C
<
_
O
1
O
2
O
3
O
4
O
5
IRFU410A
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source Voltage
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward Voltage
Fig 3. On-Resistance vs. Drain Current
0.1
1
10
100
0.01
0.1
1
10
VGS
TOP : 10V
9V
8V
7V
6V
BOTTOM 5V
@Note :
1. 250us Pulse Test
2. Tc=25
o
C
Id, DRAIN CURRENT (AMPERES)
VDS,DRAIN-TO-SOURCE VOLTAGE(VOLTS)
Typical Output Characteristics
0
2
4
6
8
10
12
0
1
2
3
Tj=-25
o
C
Tj=25
o
C
Tj=150
o
C
80us Pulse Test
Vds>Id(on)Rds(on)
ID, DRAIN CURRENT (AMPERES)
Vgs,GATE-TO-SOURCE VOLTAGE(VOLTS)
Typical Transfer Characteristics
0.0
0.5
1.0
1.5
2.0
2.5
3.0
4
8
12
16
20
@ Note : Tj=25C
o
VGS=20V
VGS=10V
Rds(on), DRAIN -TO-SOURCE ON RESISTANCE(OHMS)
ID,DRAIN CURRENT(AMPERES)
Typical On-Resistance Vs. Drain Current
0
1
2
3
4
5
6
1
10
100
@Note :
1. Vgs=0V
2. 250us Pulse Test
Tj=25
o
C
Tj=150
o
C
IDR,REVERSE DRAIN CURRENT (AMPERES)
VSD,SOURCE-TO-DRAIN VOLTAGE(VOLTS)
Typical Source-Drain Diode Forward Voltage
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
16
VDS=400V
ID=1.2A
Vgs, GATE-TO-SOURCE VOLTAGE(VOLTS)
Qg,TOTAL GATE CHARGE(nC)
Typical Gate Charge Vs. Gate-To-Source Voltage
1
10
100
0
50
100
150
200
250
@Notes :
1. Vgs=0V
2. f=1MHz
Crss
Coss
Ciss
Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
Capacitance (pF)
VDS, Drain -Source Voltage (v)
IRFU410A
N-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
Fig 10. Max. Drain Current vs. Case Temperature
-75
-50
-25
0
25
50
75
100
125
150
175
0.8
0.9
1.0
1.1
1.2
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE
(NORMALIZED)
Tj,JUNCTION TEMPERATURE(
o
C)
Breakdown Voltage Vs. Temperature
25.0
37.5
50.0
62.5
75.0
87.5
100.0
112.5
125.0
137.5
150.0
0.0
0.5
1.0
1.5
2.0
ID, DRAIN CURRENT (AMPERES)
Ta, AMBIENT TEMPERATURE(
o
C)
Maximum Drain Current Vs. Case Temperature
-50
0
50
100
150
0.4
0.8
1.2
1.6
2.0
2.4
2.8
VGS=10V
ID=0.6A
BVDSS,DRAIN-TO-SORUCE BREAKDOWN VOLTAGE
(NORMALIZED)
Tj=JUNCTION TEMPERATURE(
o
)C
Breakdown Voltage Vs. Temperature
N-CHANNEL
POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
Fig 13. Resistive Switching Test Circuit & Waveforms
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
E
AS
=
L
L
I
AS
2
----
2
1
--------------------
BV
DSS
-- V
DD
BV
DSS
V
in
V
out
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
Vary t
p
to obtain
required peak I
D
10V
V
DD
C
L
L
V
DS
I
D
R
G
t
p
DUT
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
V
DD
( 0.5 rated V
DS
)
10V
V
out
V
in
R
L
DUT
R
G
3mA
V
GS
Current Sampling (I
G
)
Resistor
Current Sampling (I
D
)
Resistor
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
" Current Regulator "
R
1
R
2
IRFU410A
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