2003 Fairchild Semiconductor Corporation
July 2003
I
S
L9
R
4
6
0
P
F2
ISL9R460PF2 Rev. A
ISL9R460PF2
4A, 600V StealthTM Diode
General Description
The ISL9R460PF2 is a StealthTM diode optimized for low
loss performance in high frequency hard switched
applications. The StealthTM family exhibits low reverse
recovery current (I
RRM
) and exceptionally soft recovery
under typical operating conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low I
RRM
and short t
a
phase reduce loss
in switching transistors. The soft recovery minimizes
ringing, expanding the range of conditions under which the
diode may be operated without the use of additional
snubber circuitry. Consider using the StealthTM diode with
an SMPS IGBT to provide the most efficient and highest
power density design at lower cost.
Formerly developmental type TA49408.
Features
Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
b
/ t
a
> 3
Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
rr
< 20ns
Operating Temperature . . . . . . . . . . . . . . . . . . . . 150
o
C
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Avalanche Energy Rated
Applications
Switch Mode Power Supplies
Hard Switched PFC Boost Diode
UPS Free Wheeling Diode
Motor Drive FWD
SMPS FWD
Snubber Diode
Device Maximum Ratings
T
C
= 25C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
RRM
Peak Repetitive Reverse Voltage
600
V
V
RWM
Working Peak Reverse Voltage
600
V
V
R
DC Blocking Voltage
600
V
I
F(AV)
Average Rectified Forward Current (T
C
= 108C)
4
A
I
FRM
Repetitive Peak Surge Current (20kHz Square Wave)
8
A
I
FSM
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
50
A
P
D
Power Dissipation
22
W
E
AVL
Avalanche Energy (0.5A, 80mH)
10
mJ
T
J
, T
STG
Operating and Storage Temperature Range
-55 to 150
C
T
L
T
PKG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
260
C
C
CAUTION: Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
K
A
CATHODE
ANODE
TO-220F
Package
Symbol
2003 Fairchild Semiconductor Corporation
ISL9R460PF2 Rev. A
I
S
L9
R
4
6
0
P
F2
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking
Device
Package
Tape Width
Quantity
R460PF2
ISL9R460PF2
TO-220F
N/A
50 Units
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
I
R
Instantaneous Reverse Current
V
R
= 600V
T
C
= 25C
-
-
100
A
T
C
= 125C
-
-
1.0
mA
V
F
Instantaneous Forward Voltage
I
F
= 4A
T
C
= 25C
-
2.0
2.4
V
T
C
= 125C
-
1.6
2.0
V
C
J
Junction Capacitance
V
R
= 10V, I
F
= 0A
-
19
-
pF
t
rr
Reverse Recovery Time
I
F
= 1A, dI
F
/dt = 100A/
s, V
R
= 30V
-
17
20
ns
I
F
= 4A, dI
F
/dt = 100A/
s, V
R
= 30V
-
19
22
ns
t
rr
Reverse Recovery Time
I
F
= 4A,
dI
F
/dt = 200A/
s,
V
R
= 390V, T
C
= 25C
-
17
-
ns
I
RRM
Maximum Reverse Recovery Current
-
2.6
-
A
Q
RR
Reverse Recovered Charge
-
22
-
nC
t
rr
Reverse Recovery Time
I
F
= 4A,
dI
F
/dt = 200A/
s,
V
R
= 390V,
T
C
= 125C
-
77
-
ns
S
Softness Factor (t
b
/t
a
)
-
4.2
-
I
RRM
Maximum Reverse Recovery Current
-
2.8
-
A
Q
RR
Reverse Recovered Charge
-
100
-
nC
t
rr
Reverse Recovery Time
I
F
= 4A,
dI
F
/dt = 400A/
s,
V
R
= 390V,
T
C
= 125C
-
54
-
ns
S
Softness Factor (t
b
/t
a
)
-
3.5
-
I
RRM
Maximum Reverse Recovery Current
-
4.3
-
A
Q
RR
Reverse Recovered Charge
110
-
nC
dI
M
/dt
Maximum di/dt during t
b
-
500
-
A/s
R
JC
Thermal Resistance Junction to Case
-
-
5.7
C/W
R
JA
Thermal Resistance Junction to Ambient TO-220F
-
-
70
C/W
2003 Fairchild Semiconductor Corporation
ISL9R460PF2 Rev. A
I
S
L9
R
4
6
0
P
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Typical Performance Curves
T
C
= 25C unless otherwise noted
Figure 1. Forward Current vs Forward Voltage
Figure 2. Reverse Current vs Reverse Voltage
Figure 3. t
a
and t
b
Curves vs Forward Current
Figure 4. t
a
and t
b
Curves vs dI
F
/dt
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
Figure 6. Maximum Reverse Recovery Current vs
dI
F
/dt
V
F
, FORWARD VOLTAGE (V)
I
F
, F
O
R
W
ARD CURRE
NT
(
A
)
0
0.5
1
1.5
2
2.5
0
1
2
3
4
5
6
7
8
3
25
o
C
100
o
C
150
o
C
V
R
, REVERSE VOLTAGE (V)
I
R
,
R
E
V
E
R
S
E
CURRE
NT
(
A)
100
10
1
100
200
300
500
600
400
0.1
600
25
o
C
150
o
C
125
o
C
100
o
C
75
o
C
I
F
, FORWARD CURRENT (A)
0
20
30
40
50
70
5
8
t
,
RE
CO
V
E
R
Y
T
I
M
E
S
(
n
s
)
80
90
1
2
3
4
6
7
t
b
AT dI
F
/dt = 200A/s, 500A/s, 800A/s
t
a
AT dI
F
/dt = 200A/s, 500A/s, 800A/s
60
10
V
R
= 390V, T
J
= 125
o
C
dI
F
/dt, CURRENT RATE OF CHANGE (A/
s)
100
0
20
40
60
80
700
1000
t
,
RE
CO
V
E
R
Y
T
I
M
E
S
(
n
s
)
200
300
400
500
600
800
900
100
120
t
b
AT I
F
= 8A, 4A, 2A
t
a
AT I
F
= 8A, 4A, 2A
V
R
= 390V, T
J
= 125
o
C
I
F
, FORWARD CURRENT (A)
1
2
3
4
5
6
7
8
I
RR
M
, M
A
X
RE
V
E
R
S
E
RE
CO
V
E
R
Y
CURRE
NT
(
A
)
dI
F
/dt = 800A/s
dI
F
/dt = 500A/s
dI
F
/dt = 200A/s
2
3
4
5
6
7
8
V
R
= 390V, T
J
= 125
o
C
dI
F
/dt, CURRENT RATE OF CHANGE (A/
s)
100
1
2
3
4
5
6
700
1000
I
RR
M
, M
A
X
RE
V
E
R
S
E
RE
CO
V
E
R
Y
CURRE
NT
(
A
)
V
R
= 390V, T
J
= 125
o
C
I
F
= 8A
I
F
= 2A
7
8
200
300
400
500
600
800
900
I
F
= 4A
2003 Fairchild Semiconductor Corporation
ISL9R460PF2 Rev. A
I
S
L9
R
4
6
0
P
F2
Figure 7. Reverse Recovery Softness Factor vs
dI
F
/dt
Figure 8. Reverse Recovery Charge vs dI
F
/dt
Figure 9. Junction Capacitance vs Reverse Voltage
Figure 10. DC Current Derating Curve
Figure 11. Normalized Maximum Transient Thermal Impedance
Typical Performance Curves
T
C
= 25C unless otherwise noted
dI
F
/dt, CURRENT RATE OF CHANGE (A/
s)
100
1
2
3
4
5
6
700
1000
V
R
= 390V, T
J
= 125
o
C
I
F
= 4A
I
F
= 8A
I
F
= 2A
S,
R
E
VER
S
E
R
E
C
O
VE
R
Y
S
O
F
T
N
ESS
F
A
C
T
O
R
200
300
400
500
600
800
900
dI
F
/dt, CURRENT RATE OF CHANGE (A/
s)
60
80
100
120
140
160
180
Q
RR
, RE
V
E
RS
E
RE
CO
V
E
R
Y
CHARG
E
(
n
C)
100
700
1000
200
300
400
500
600
800
900
V
R
= 390V, T
J
= 125
o
C
I
F
= 8A
I
F
= 4A
I
F
= 2A
V
R
, REVERSE VOLTAGE (V)
C
J
, J
UNCT
I
O
N CAP
A
C
IT
ANCE
(
p
F
)
0
200
400
600
800
1000
1600
100
1.0
0.03
0.1
10
1200
1400
1800
0
1
2
3
4
5
100
110
120
130
140
150
T
C
, CASE TEMPERATURE (
O
C)
I
F(
A
V
)
, A
V
E
R
A
G
E
F
O
R
W
ARD CURR
E
N
T
(
A
)
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
2
t, RECTANGULAR PULSE DURATION (s)
Z
JC
, NO
RM
AL
IZ
E
D
T
H
E
R
M
A
L
IM
P
E
D
ANCE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
t
2
0.5
0.2
0.1
0.05
0.01
0.02
DUTY CYCLE - DESCENDING ORDER
SINGLE PULSE
2003 Fairchild Semiconductor Corporation
ISL9R460PF2 Rev. A
I
S
L9
R
4
6
0
P
F2
Test Circuit and Waveforms
Figure 12. It
rr
Test Circuit
Figure 13. t
rr
Waveforms and Definitions
Figure 14. Avalanche Energy Test Circuit
Figure 15. Avalanche Current and Voltage
Waveforms
R
G
L
V
DD
MOSFET
CURRENT
SENSE
DUT
V
GE
t
1
t
2
V
GE
AMPLITUDE AND
t
1 AND
t
2
CONTROL I
F
R
G
CONTROL dI
F
/dt
+
-
dt
dI
F
I
F
t
rr
t
a
t
b
0
I
RM
0.25 I
RM
DUT
CURRENT
SENSE
+
L
R
V
DD
R < 0.1
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
-
V
DD
Q
1
I = 0.5A
L = 80mH
V
DD
= 200V
I V
t
0
t
1
t
2
I
L
V
AVL
t
I
L
Rev. I3
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intended to be an exhaustive list of all such trademarks.
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
ACExTM
ActiveArrayTM
BottomlessTM
CoolFETTM
CROSSVOLTTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
I
2
CTM
ImpliedDisconnectTM
ISOPLANARTM
LittleFETTM
MicroFETTM
MicroPakTM
MICROWIRETM
MSXTM
MSXProTM
OCXTM
OCXProTM
OPTOLOGIC
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerTrench
QFET
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
RapidConfigureTM
RapidConnectTM
SILENT SWITCHER
SMART STARTTM
SPMTM
StealthTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogic
TruTranslationTM
UHCTM
UltraFET
VCXTM
Across the board. Around the world.TM
The Power FranchiseTM
Programmable Active DroopTM
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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