ChipFind - документация

Электронный компонент: J212

Скачать:  PDF   ZIP
5
G
D
S
J210
J211
J212
N-Channel RF Amplifier
This device is designed for HF/VHF mixer/amplifier and
applications where Process 50 is not adequate. Sufficient
gain and low noise for sensitive receivers. Sourced from
Process 90.
MMBFJ210
MMBFJ211
MMBFJ212
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
TA = 25C unless otherwise noted
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
DG
Drain-Gate Voltage
25
V
V
GS
Gate-Source Voltage
- 25
V
I
GF
Forward Gate Current
10
mA
T
J
,T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
J210-212
*MMBFJ210-212
P
D
Total Device Dissipation
Derate above 25
C
350
2.8
225
1.8
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
125
C/W
R
JA
Thermal Resistance, Junction to Ambient
357
556
C/W
SOT-23
Mark: 62V / 62W / 62X
G
S D
TO-92
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
NOTE: Source & Drain
are interchangeable
J210 / J21
1 / J212 / MMBFJ210 / MMBFJ21
1 / MMBFJ212
J210/J211/J212/MMBFJ210/J211/J212, Rev A
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
I
D S S
Z e r o - G a t e V o l t a g e D r a i n C u r r e n t *
V
D S
= 1 5 V , V
G S
= 0
2 1 0
2 1 1
2 1 2
2 . 0
7 . 0
1 5
1 5
2 0
4 0
m A
m A
m A
Typical Characteristics
Parameter Interactions
Common Drain-Source
V
(BR)GSS
Gate-Source Breakdown Voltage
I
G
= 1.0
A, V
DS
= 0
- 25
V
I
G S S
Gate Reverse Current
V
G S
= 15 V, V
D S
= 0
- 100
pA
V
GS(off)
Gate-Source Cutoff Voltage
V
D S
= 15 V, I
D
= 1.0 nA
210
211
212
-1.0
- 2.5
- 4.0
-3.0
- 4.5
- 6.0
V
V
V
g
fs
Common Source Forward
Transconductance
V
D S
= 15 V, V
G S
= 0, f = 1.0 kHz
210
211
212
4000
6000
7000
12,000
12,000
12,000
mhos
mhos
mhos
g
oss
Common Source Output
Conductance
V
D S
= 15 V, V
G S
= 0, f = 1.0 kHz
200
mhos
*
Pulse Test: Pulse Width
300
S
N-Channel RF Amplifier
(continued)
J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
5
Transfer Characteristics
Typical Characteristics
(continued)
Output Conductance
vs. Drain Current
Leakage Current vs. Voltage
Noise Voltage vs. Frequency
Transfer Characteristics
Transconductance vs.
Drain Current
N-Channel RF Amplifier
(continued)
J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
Typical Characteristics
(continued)
Common Source Characteristics
Input Admittance
Output Admittance
Reverse Transadmittance
Capacitance vs. Voltage
os)
Forward Transadmittance
N-Channel RF Amplifier
(continued)
J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
5
Common Gate Characteristics
Input Admittance
Forward Transadmittance
Output Admittance
Reverse Transadmittance
N-Channel RF Amplifier
(continued)
J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
OPTOPLANARTM
PACMANTM
POPTM
PowerTrench
QFETTM
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
SILENT SWITCHER
SMART STARTTM
StealthTM
FAST
FASTrTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
ISOPLANARTM
LittleFETTM
MicroFETTM
MICROWIRETM
OPTOLOGICTM
Rev. H2
ACExTM
BottomlessTM
CoolFETTM
CROSSVOLTTM
DenseTrenchTM
DOMETM
EcoSPARKTM
E
2
CMOS
TM
EnSigna
TM
FACTTM
FACT Quiet SeriesTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogicTM
UHCTM
UltraFET
VCXTM