ChipFind - документация

Электронный компонент: KA1H0165R-TU

Скачать:  PDF   ZIP
2003 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev.1.0.3
Features
Precision Fixed Operating Frequency (100kHz)
Pulse by Pulse Over Current Limiting
Over Load Protection
Over Voltage Protection (Min. 23V)
Internal Thermal Shutdown Function
Under Voltage Lockout
Internal High Voltage Sense FET
Auto Restart Mode
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM
controller IC. PWM controller features integrated fixed
oscillator, under voltage lock out, leading edge blanking,
optimized gate turn-on/turn-off driver, thermal shut down
protection, over voltage protection, temperature compensated
precision current sources for loop compensation and fault
protection circuit compared to discrete MOSFET and
controller or R
CC
switching converter solution The Fairchild
Power Switch(FPS) can reduce total component count,
design size, weight and at the same time increase &
efficiency, productivity, and system reliability. It has a basic
platform well suited for cost effective design in either a
flyback converter or a forward converter.
1.6.7.8. Drain
8-DIP
1
TO-220F-4L
1
1. GND
2. Drain
3. VCC
4. F/B
2. GND
3. VCC
4. F/B
5. S/S
Internal Block Diagram
V
CC
32V
5
A
5V
2.5R
1R
1mA
0.1V
+
-
OVER VOLTAGE S/D
+
-
7.5V
25V
Thermal S/D
S
R
Q
Power on reset
+
-
L.E.B
S
R
Q
OSC
5V
Vref
Internal
bias
Good
logic
SFET
DRAIN
GND
FB
Soft Start
9V
*
* KA1H0165RN
KA1H0165RN/KA1H0165R
Fairchild Power Switch(FPS)
KA1H0165RN/KA1H0165R
2
Absolute Maximum Ratings
Notes:
1. T
j
= 25
C to 150
C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L = 80mH, V
DD
= 50V, R
G
= 27
, starting T
j
= 25
C
Parameter
Symbol
Value
Unit
Maximum Drain Voltage
(1)
V
D,MAX
650
V
Drain-Gate Voltage (R
GS
=1M
)
V
DGR
650
V
Gate-Source (GND) Voltage
V
GS
30
V
Drain Current Pulsed
(2)
I
DM
4.0
A
DC
Single Pulsed Avalanche Energy
(3)
E
AS
95
mJ
Continuous Drain Current (T
C
=25
C)
I
D
1.0
A
DC
Continuous Drain Current (T
C
=100
C)
I
D
0.7
A
DC
Maximum Supply Voltage
V
CC,MAX
30
V
Input Voltage Range
V
FB
-0.3 to V
SD
V
Total Power Dissipation
P
D
40
W
Darting
0.32
W/
C
Operating Ambient Temperature
T
A
-25 to +85
C
Storage Temperature
T
STG
-55 to +150
C
KA1H0165RN/KA1H0165R
3
Electrical Characteristics (SFET Part)
(Ta=25
C unless otherwise specified)
Note:
1. Pulse test: Pulse width
300
S, duty cycle
2%
2.
Parameter
Symbol
Condition
Min. Typ. Max. Unit
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=50
A
650
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=Max., Rating,
V
GS
=0V
-
-
50
A
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125
C
-
-
200
A
Static Drain-Source on Resistance
(Note)
R
DS(ON)
V
GS
=10V, I
D
=0.5A
-
8
10
Forward Transconductance
(Note)
gfs
V
DS
=50V, I
D
=0.5A
0.5
-
-
S
Input Capacitance
Ciss
V
GS
=0V, V
DS
=25V,
f=1MHz
-
250
-
pF
Output Capacitance
Coss
-
25
-
Reverse Transfer Capacitance
Crss
-
10
-
Turn on Delay Time
t
d(on)
V
DD
=0.5B V
DSS
, I
D
=1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
-
12
-
nS
Rise Time
tr
-
4
-
Turn off Delay Time
t
d(off)
-
30
-
Fall Time
tf
-
10
-
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
V
GS
=10V, I
D
=1.0A,
V
DS
=0.5B V
DSS
(MOSFET
switching time is essentially
independent of operating
temperature)
-
-
21
nC
Gate-Source Charge
Qgs
-
3
-
Gate-Drain (Miller) Charge
Qgd
-
9
-
S
1
R
----
=
KA1H0165RN/KA1H0165R
4
Electrical Characteristics (Control Part)
(Continued)
(Ta=25
C unless otherwise specified)
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
Parameter
Symbol
Condition
Min. Typ. Max.
Unit
UVLO SECTION
Start Threshold Voltage
V
START
-
14
15
16
V
Stop Threshold Voltage
V
STOP
After turn on
9
10
11
V
OSCILLATOR SECTION
Initial Accuracy
F
OSC
Ta=25
C
90
100
110
kHz
Frequency Change With Temperature
(2)
F/
T
-25
C
Ta
+85
C
-
5
10
%
Maximum Duty Cycle
Dmax
-
64
67
70
%
FEEDBACK SECTION
Feedback Source Current
I
FB
Ta=25
C, 0V
Vfb
3V
0.7
0.9
1.1
mA
Shutdown Feedback Voltage
V
SD
-
6.9
7.5
8.1
V
Shutdown Delay Current
Idelay
Ta=25
C, 5V
Vfb
V
SD
4.0
5.0
6.0
A
SOFT START SECTION (KA1H0165RN)
Soft Start Voltage
V
SS
V
FB
=2V
4.7
5.0
5.3
V
Soft Start Current
I
SS
Sync & S/S=GND
0.8
1.0
1.2
mA
REFERENCE SECTION
Output Voltage
(1)
Vref
Ta=25
C
4.80
5.00
5.20
V
Temperature Stability
(1)(2)
Vref/
T
-25
C
Ta
+85
C
-
0.3
0.6
mV/
C
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit
I
OVER
Max. inductor current
0.53
0.6
0.67
A
PROTECTION SECTION
Thermal Shutdown Temperature
(1)
T
SD
-
140
160
-
C
Over Voltage Protection Voltage
V
OVP
-
23
25
28
V
TOTAL DEVICE SECTION
Start-Up Current
I
START
V
CC
=14V
0.1
0.3
0.4
mA
Operating Supply Current
(Control Part Only)
I
OP
Ta=25
C
6
12
18
mA
V
CC
Zener Voltage
V
Z
I
CC
=20mA
30
32.5
35
V
KA1H0165RN/KA1H0165R
5
Typical Performance Characteristics
(These characteristic graphs are normalized at Ta=25
C)
Fig.1 Operating Frequency
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25
0
25
50
75
100 125 150
Fosc
Fig.2 Feedback Source Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25
0
25
50
75
100 125 150
Ifb
Fig.3 Operating Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25
0
25
50
75
100 125 150
Iop
Fig.4 Max Inductor Current
0.8
0.85
0.9
0.95
1
1.05
1.1
-25
0
25
50
75
100 125 150
Ipeak
Fig.5 Start up Current
0.5
0.7
0.9
1.1
1.3
1.5
-25
0
25
50
75
100 125 150
Istart
Fig.6 Start Threshold Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25
0
25
50
75 100 125 150
Vstart
Temperature [
C
]
Temperature [
C
]
Temperature [
C
]
Temperature [
C
]
Temperature [
C
]
Temperature [
C
]
Figure 1. Operating Frequency
Figure 2. Feedback Source Current
Figure 3. Operating Supply Current
Figure 4. Peak Current Limit
Figure 5. Start up Current
Figure 6. Start Threshold Voltage
I
over
I
ST
V
th(H)
IFB
I
OP