2000 Fairchild Semiconductor International
www.fairchildsemi.com
Rev. .5.0
Features
Precision fixed operating frequency
KA1L0380B/KA1L0380RB
(50KHz)
KA1M0380RB
(67KHz)
KA1H0380RB
(100KHz)
Pulse by pulse over current limiting
Over load protection
Over voltage protection (Min. 23V)
Internal thermal shutdown function
Under voltage lockout
Internal high voltage sense FET
Auto restart (
KA1L0380RB/KA1M0380RB/KA1H0380RB)
Description
The SPS product family is specially designed for an off-line
SMPS with minimal external components. The SPS consist of
high voltage power SenseFET and current mode PWM control-
ler IC. PWM controller features integrated fixed oscillator,
under voltage lock out, leading edge blanking, optimized gate
turn-on/turn-off driver, thermal shut down protection, over volt-
age protection, temperature compensated precision current
sources for loop compensation and fault protection circuit.
Compared to discrete MOSFET and controller or RCC switch-
ing converter solution, a SPS can reduce total component count,
design size, weight and at the same time increase & efficiency,
productivity, and system reliability. It has a basic platform well
suited for cost effective design in either a flyback converter or a
forward converter.
TO-220F-4L
1. GND 2. DRAIN 3. V
CC
4. FB
1
Internal Block Diagram
#3 V
CC
32V
5
A
9V
2.5R
1R
1mA
0.1V
+
-
OVER VOLTAGE S/D
+
-
7.5V
25V
Thermal S/D
S
R
Q
Power on reset
+
-
L.E.B
S
R
Q
OSC
5V
Vref
Internal
bias
Good
logic
SFET
#2 DRAIN
#1 GND
#4 FB
KA1L0380B/KA1L0380RB/KA1M0380RB/
KA1H0380RB
Fairchild Power Switch(SPS)
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
2
Absolute Maximum Ratings
Notes:
1. Tj=25
C to 150
C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=51mH, V
DD
=50V, R
G
=25
, starting Tj=25
C
4. L=13
H, starting Tj=25
C
Parameter
Symbol
Value
Unit
Drain-source (GND) voltage
(1)
V
DSS
800
V
Drain-Gate voltage (R
GS
=1M
)
V
DGR
800
V
Gate-source (GND) voltage
V
GS
30
V
Drain current pulsed
(2)
I
DM
12
A
DC
Single pulsed avalanche energy
(3)
E
AS
95
mJ
Avalanche current
(4)
I
AS
6
A
Continuous drain current (T
C
=25
C)
I
D
3.0
A
DC
Continuous drain current (T
C
=100
C)
I
D
2.1
A
DC
Supply voltage
V
CC
30
V
Analog input voltage range
V
FB
-
0.3 to V
SD
V
Total power dissipation
P
D
35
W
Derating
0.28
W/
C
Operating temperature
T
OPR
-
25 to +85
C
Storage temperature
T
STG
-
55 to +150
C
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
3
Electrical Characteristics (SFET part)
(Ta=25
C unless otherwise specified)
Note:
Pulse test: Pulse width
300
S, duty cycle
2%
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Drain-source breakdown voltage
BV
DSS
V
GS
=0V, I
D
=50
A
800
-
-
V
Zero gate voltage drain current
I
DSS
V
DS
=Max., Rating,
V
GS
=0V
-
-
50
A
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125
C
-
-
200
A
Static drain-source on resistance
(Note)
R
DS(ON)
V
GS
=10V, I
D
=1.5A
-
4.0
5.0
Forward transconductance
(Note)
gfs
V
DS
=15V, I
D
=1.5A
1.5
2.5
-
S
Input capacitance
Ciss
V
GS
=0V, V
DS
=25V,
f=1MHz
-
779
-
pF
Output capacitance
Coss
-
75.6
-
Reverse transfer capacitance
Crss
-
24.9
-
Turn on delay time
td(on)
V
DD
=0.5BV
DSS
, I
D
=3.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
-
40
-
nS
Rise time
tr
-
95
-
Turn off delay time
td(off)
-
150
-
Fall time
tf
-
60
-
Total gate charge
(gate-source+gate-drain)
Qg
V
GS
=10V, I
D
=3.0A,
V
DS
=0.5BV
DSS
(MOSFET
switching time are
essentially independent of
operating temperature)
-
-
34
nC
Gate-source charge
Qgs
-
7.2
-
Gate-drain (Miller) charge
Qgd
-
12.1
-
S
1
R
----
=
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
4
Electrical Characteristics (CONTROL part)
(Ta=25
C unless otherwise specified)
Notes:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
REFERENCE SECTION
Output voltage
(1)
Vref
Ta=25
C
4.80
5.00
5.20
V
Temperature Stability
(1)(2)
Vref/
T
-
25
C
Ta
+85
C
-
0.3
0.6
mV/
C
OSCILLATOR SECTION
Initial accuracy
F
OSC
KA1L0380B
45
50
55
kHz
KA1L0380RB
45
50
55
KA1M0380RB
61
67
73
KA1H0380RB
90
100
110
Frequency change with temperature
(2)
F/
T
-
25
C
Ta
+85
C
-
5
10
%
PWM SECTION
Maximum duty cycle
Dmax
KA1L0380B
74
77
80
%
KA1L0380RB
74
77
80
KA1M0380RB
74
77
80
KA1H0380RB
64
67
70
FEEDBACK SECTION
Feedback source current
I
FB
Ta=25
C, 0V
Vfb
3V
0.7
0.9
1.1
mA
Shutdown delay current
Idelay
Ta=25
C, 5V
Vfb
V
SD
4.0
5.0
6.0
A
OVER CURRENT PROTECTION SECTION
Over current protection
I
L(max)
Max. inductor current
1.89
2.15
2.41
A
UVLO SECTION
Start threshold voltage
Vth(H)
-
14
15
16
V
Minimum operating voltage
Vth(L)
After turn on
9
10
11
V
TOTAL STANDBY CURRENT SECTION
Start current
I
ST
V
CC
=14V
0.1
0.3
0.45
mA
Operating supply current
(control part only)
I
OPR
Ta=25
C
6
12
18
mA
V
CC
zener voltage
V
Z
I
CC
=20mA
30
32.5
35
V
SHUTDOWN SECTION
Shutdown Feedback voltage
V
SD
-
6.9
7.5
8.1
V
Thermal shutdown temperature (Tj)
(1)
T
SD
-
140
160
-
C
Over voltage protection voltage
V
OVP
-
23
25
28
V
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
5
Typical Performance Characteristics
(These characteristic graphs are normalized at Ta=25
C)
Fig.1 Operating Frequency
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25
0
25
50
75
100 125 150
Fosc
Fig.2 Feedback Source Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25
0
25
50
75
100 125 150
Ifb
Fig.3 Operating Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25
0
25
50
75
100 125 150
Iop
Fig.4 Max Inductor Current
0.8
0.85
0.9
0.95
1
1.05
1.1
-25
0
25
50
75
100 125 150
Ipeak
Fig.5 Start up Current
0.5
0.7
0.9
1.1
1.3
1.5
-25
0
25
50
75
100 125 150
Istart
Fig.6 Start Threshold Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25
0
25
50
75 100 125 150
Vstart
Temperature [
C
]
Temperature [
C
]
Temperature [
C
]
Temperature [
C
]
Temperature [
C
]
Temperature [
C
]
Figure 1. Operating Frequency
Figure 2. Feedback Source Current
Figure 3. Operating Current
Figure 4. Max. Inductor Current
Figure 5. Start up Current
Figure 6. Start Threshold Voltage
I
L(MAX)
I
ST
V
th(H)
I
OPR
PDF 
ZIP