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Электронный компонент: KA3S0680RF

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2001 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev.1.0.2
Features
Wide operatimg frequency range up to (150kHz)
Pulse by pulse over current limiting
Over load protection
Over voltage protecton (Min. 23V)
Internal thermal shutdown function
Under voltage lockout
Internal high voltage sense FET
External sync terminal
Auto Restart Mode
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM
controller IC. controller IC features a trimmed oscillator,
under voltage lock out, leading edge blanking, optimized
gate turn-on/turn-off driver, thermal shut down protection,
over voltage protection, temperature compensated precision
current sources for loop compensation and fault protection
circuit. compared to discrete MOSFET and controller or
R
CC
switching converter solution, a Fairchild Power
Switch(FPS) can reduce total component count, design size,
weight and at the same time increase & efficiency,
productivity, and system reliability. It has a basic platform
well suited for cost effective C-TV power supply.
TO-3PF-5L
1.DRAIN 2.GND 3.V
CC
4.FB 5.Sync
TO-3P-5L
1
1
Internal Block Diagram
#3 V
CC
32V
2
A
5V
2.5R
1R
1mA
0.1V
+
-
OVER VOLTAGE S/D
+
-
7.5V
25V
Thermal S/D
S
R
Q
Power on reset
+
-
L.E.B
S
R
Q
OSC
5V
Vref
Internal
bias
Good
logic
SFET
#1 DRAIN
#2 GND
#4 FB
#5 Sync
9V
+
-
6.4V
KA3S0680RB/KA3S0680RFB
Fairchild Power Switch(FPS)
KA3S0680RB/KA3S0680RFB
2
Absolute Maximum Ratings
Note:
1. Tj=25
C to 150
C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=24mH, starting Tj=25
C
Characteristic
Symbol
Value
Unit
Maximum Drain voltage
(1)
V
D,MAX
800
V
Drain Gate voltage (R
GS
=1M
)
V
DGR
800
V
Gate source (GND) voltage
V
GS
30
V
Drain current pulsed
(2)
I
DM
24.0
A
DC
Single pulsed avalanche energy
(3)
E
AS
455
mJ
Continuous drain current (T
C
=25
C)
I
D
6.0
A
DC
Continuous drain current (T
C
=100
C)
I
D
4.0
A
DC
Maximum supply voltage
V
CC,MAX
30
V
Input voltage range
V
FB
-
0.3 to V
SD
V
Total power dissipation
P
D
(watt H/S)
150
W
Derating
1.21
W/
C
Operating ambient temperature
T
A
-
25 to +85
C
Storage temperature
T
STG
-
55 to +150
C
KA3S0680RB/KA3S0680RFB
3
Electrical Characteristics (SFET part)
(Ta =
25
C unless otherwise specified)
Note:
Pulse test: Pulse width
300
S, duty cycle
2%
Characteristic
Symbol
Test condition
Min.
Typ.
Max.
Unit
Drain source breakdown voltage
BV
DSS
V
GS
= 0V, I
D
= 50
A
800
-
-
V
Zero gate voltage drain current
I
DSS
V
DS
= Max., Rating,
V
GS
= 0V
-
-
50
A
V
DS
= 0.8Max., Rating,
V
GS
= 0V, T
C
= 125
C
-
-
200
mA
Static drain source on resistance
(note)
R
DS(ON)
V
GS
= 10V, I
D
= 4.0A
-
1.6
2.0
W
Forward transconductance
(note)
gfs
V
DS
= 15V, I
D
= 4.0A
1.5
2.5
-
S
Input capacitance
Ciss
V
GS
= 0V, V
DS
= 25V,
f = 1MHz
-
1600
-
pF
Output capacitance
Coss
-
140
-
Reverse transfer capacitance
Crss
-
42
-
Turn on delay time
t
d(on)
V
DD
= 0.5BV
DSS
, I
D
= 6.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
-
60
-
nS
Rise time
tr
-
150
-
Turn off delay time
t
d(off)
-
300
-
Fall time
tf
-
130
-
Total gate charge
(gate-source+gate-drain)
Qg
V
GS
=10V, I
D
= 6.0A,
V
DS
= 0.5BV
DSS
(MOSFET
switching time are
essentially independent of
operating temperature)
-
70
-
nC
Gate source charge
Qgs
-
16
-
Gate drain (Miller) charge
Qgd
-
27
-
S
1
R
----
=
KA3S0680RB/KA3S0680RFB
4
Electrical Charcteristics (SFET part) (Continued)
(Ta = 25
C unless otherwise specified)
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS(water test) process
3.The amplitude of the sync. pulse is recommended to be between 2V and 3V for stable sync. function.
Characteristic
Symbol
Test condition
Min.
Typ. Max.
Unit
UVLO SECTION
Start threshold voltage
V
START
-
14
15
16
V
Stop operating voltage
V
STOP
After turn on
9
10
11
V
OSCILLATOR SECTION
Initial accuracy
F
OSC
Ta = 25
C
18
20
22
kHz
Frequency change with temperature
(2)
F/
T
-
25
C
Ta
+85
C
-
5
10
%
Maximum duty cycle
D
MAX
-
92
95
98
%
FEEDBACK SECTION
Feedback source current
I
FB
Ta = 25
C, Vfb = GND
0.7
0.9
1.1
mA
Shutdown Feedback voltage
V
SD
-
6.9
7.5
8.1
V
Shutdown delay current
I
delay
Ta = 25
C, 5V
Vfb
V
SD
1.4
1.8
2.2
A
SYNC. & SOFT START SECTION
Soft start voltage
V
SS
V
FB
= 2V
4.7
5.0
5.3
V
Soft start current
I
SS
Sync & S/S = GND
0.8
1.0
1.2
mA
Sync threshold voltage
(3)
V
SYTH
Vfb = 5V
6.0
6.4
6.8
V
REFERENCE SECTION
Output voltage
(1)
Vref
Ta = 25
C
4.80
5.00
5.20
V
Temperature Stability
(1)(2)
Vref/
T
-
25
C
Ta
+85
C
-
0.3
0.6
mV/
C
CURRENT LIMIT (SELF-PROTECTION) SECTION
Peak Current Limit
I
OVER
Max. inductor current
3.52
4.00
4.48
A
PROTECTION SECTION
Thermal shutdown temperature (Tj)
(1)
T
SD
-
140
160
-
C
Over voltage protection voltage
V
OVP
-
23
25
28
V
TOTAL DEVICE SECTION
Start Up current
I
START
V
CC
= 14V
0.1
0.3
0.55
mA
Operating supply current
(control part only)
I
OP
Ta = 25
C
6
12
18
mA
V
CC
zener voltage
V
Z
I
CC
= 20mA
30
32.5
35
V
KA3S0680RB/KA3S0680RFB
5
Typical Performance Characteristics (control part)
(These characteristic graphs are normalized at Ta = 25
C)
Fig.1 Operating Frequency
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25
0
25
50
75
100 125 150
Fosc
Fig.2 Feedback Source Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25
0
25
50
75
100 125 150
Ifb
Fig.3 Operating Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25
0
25
50
75
100 125 150
Iop
Fig.4 Max Inductor Current
0.8
0.85
0.9
0.95
1
1.05
1.1
-25
0
25
50
75
100 125 150
Ipeak
Fig.5 Start up Current
0.5
0.7
0.9
1.1
1.3
1.5
-25
0
25
50
75
100 125 150
Istart
Fig.6 Start Threshold Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25
0
25
50
75 100 125 150
Vstart
Temperature [
C
]
Temperature [
C
]
Temperature [
C
]
Temperature [
C
]
Temperature [
C
]
Temperature [
C
]
Figure 1. Operating Frequency
Figure 2. Feedback Source Current
Figure 3. Operating Supply Current
Figure 4. Peak Current Limit
Figure 5. Start up Current
Figure 6. Start Threshold Voltage
I
over
KA3S0680RB/KA3S0680RFB
6
Typical Performance Characteristics (continued)
(These characteristic graphs are normalized at Ta = 25
C)
Fig.7 Stop Threshold Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25
0
25
50
75
100 125 150
Vstop
Fig.8 Maximum Duty Cycle
0.85
0.9
0.95
1
1.05
1.1
1.15
-25
0
25
50
75 100 125 150
Dmax
Fig.9 Vcc Zener Voltage
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25
0
25
50
75
100 125 150
Vz
Fig.10 Shutdown Feedback Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25
0
25
50
75
100 125 150
Vsd
Fig.11 Shutdown Delay Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25
0
25
50
75
100 125 150
Idelay
Fig.12 Over Voltage Protection
0.85
0.9
0.95
1
1.05
1.1
1.15
-25
0
25
50
75
100 125 150
Vovp
Temperature [
C
]
Temperature [
C
]
Temperature [
C
]
Temperature [
C
]
Temperature [
C
]
Temperature [
C
]
Figure 7. Stop Threshold Voltage
Figure 8. Maximum Duty Cycle
Figure 9. V
CC
Zener Voltage
Figure 10. Shutdown Feedback Voltage
Figure 11. Shutdown Delay Current
Figure 12. Over Voltage Protection
V
th(H)
KA3S0680RB/KA3S0680RFB
7
Typical Performance Characteristics (continued)
(These characteristic graphs are normalized at Ta = 25
C)
Figure13. Soft Start Voltage
Figure 14. Static Drain-Source on Resistance
Fig.13 Soft Start Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25
0
25
50
75
100 125 150
Vss
Fig.14 Drain Source Turn-on
Resistance
0
0.5
1
1.5
2
2.5
-25
0
25
50
75 100 125 150
Rdson
( )
KA3S0680RB/KA3S0680RFB
8
Package Dimensions
TO-3P-5L
KA3S0680RB/KA3S0680RFB
9
Package Dimensions
(Continued)
TO-3P-5L (Forming)
KA3S0680RB/KA3S0680RFB
10
Package Dimensions
(Continued)
TO-3PF-5L
KA3S0680RB/KA3S0680RFB
11
Package Dimensions
(Continued)
TO-3PF-5L(Forming)
KA3S0680RB/KA3S0680RFB
10/17/01 0.0m 001
Stock#DSxxxxxxxx
2001 Fairchild Semiconductor Corporation
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
Ordering Information
TU : Non Forming Type
YDTU : Forming Type
Product Number
Package
Operating Temperature
KA3S0680RB-TU
TO-3P-5L
-25
C to +85
C
KA3S0680RB-YDTU
TO-3P-5L(Forming)
KA3S0680RFB-TU
TO-3PF-5L
-25
C to +85
C
KA3S0680RFB-YDTU TO-3PF-5L(Forming)