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Электронный компонент: KA5S09654QT-YDTU

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2001 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev.1.0.2
Features
Wide Operating Frequency Range Up to 150Khz
Lowest Cost SMPS Solution
Lowest External Components
Low Start-up Current (max:170uA)
Low Operating Current (max:12mA)
Internal High Voltage SenseFET
Over Voltage Protection With Latch Mode (Min23V)
Over Load Protection With Latch Mode
Over Current Protection With Latch Mode
Internal Thermal Protection With Latch Mode
Pulse By Pulse Over Current Limiting
Under Voltage Lockout With Hysteresis
External Sync. Terminal
TO-3P-5L
1. Drain 2. Gnd 3. V
CC
4. FeedBack 5. Sync.
TO-220F-5L
1
1
TO-220-5L
1
Internal Block Diagram
+
-
-
+
+
-
+
-
V
CC
Soft Start
& Sync
3
4
5
Vref
V
CC
UVLO
15/9V
Feedback
VREF
Vth.sy
7V
6V
4
A
OSC
VREF
V
CC
2.5V
R
0.95mA
OLP
(Vfb=7.5V)
TSD
(Tj=160
C)
OVP
(V
CC
=25V)
OCP
(V
S
=1.1V)
1
s Window
Open Circuit
Power-on Reset
(VCC=6.5V)
S
R
Q
Shutdown Latch
Voffset
S
R
Q
CLK
2.5V
Bias
VREF UVLO
1
2
Drain
GND
V
S
SenseFET
Rsense
KA5S-SERIES
KA5S0765C/KA5S09654QT/KA5S0965/
KA5S12656/KA5S1265
Fairchild Power Switch(FPS)
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/KA5S1265
2
Absolute Maximum Ratings
(Ta=2
5
C, unless otherwise specified)
Characteristic
Symbol
Value
Unit
KA5S0765C
Maximum drain voltage
V
D,MAX
650
V
Drain-gate voltage(R
GS
=1M
)
V
DGR
650
V
Gate-source(GND) voltage
V
GS
30
V
Drain current pulsed
(1)
I
DM
28
ADC
Continuous drain current (Tc = 25
C)
I
D
7.0
ADC
Continuous drain current (Tc = 100
C)
I
D
5.6
ADC
Single pulsed avalanch current
(3)
(Energy
(2)
)
I
AS
(E
AS
)
20(570)
A(mJ)
Maximum supply voltage
V
CC,MAX
30
V
Input voltage range
V
FB
-0.3 to V
CC
V
V
SS
-0.3 to 8
V
Total power dissipation
P
D
(Watt H/S)
135
W
Derating
1.1
W /
C
Operating junction temperature.
T
J
+160
C
Operating ambient temperature.
T
A
-25 to +85
C
Storage temperature range.
T
STG
-55 to +150
C
KA5S09654QT
Maximum drain voltage
V
D,MAX
650
V
Drain-gate voltage(R
GS
=1M
)
V
DGR
650
V
Gate-source(GND) voltage
V
GS
30
V
Drain current pulsed
(1)
I
DM
49
ADC
Continuous drain current (Tc = 25
C)
I
D
9.0
ADC
Continuous drain current (Tc = 100
C)
I
D
5.7
ADC
Single pulsed avalanch current
(3)
(Energy
(2)
)
I
AS
(E
AS
)
25(660)
A(mJ)
Maximum supply voltage
V
CC,MAX
30
V
Input voltage range
V
FB
-0.3 to V
CC
V
V
SS
-0.3 to 8
V
Total power dissipation
P
D
(Watt H/S)
160
W
Derating
1.28
W /
C
Operating junction temperature.
T
J
+160
C
Operating ambient temperature.
T
A
-25 to +85
C
Storage temperature range.
T
STG
-55 to +150
C
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/
3
Absolute Maximum Ratings (Continued)
(Ta=25
C, unless otherwise specified)
Characteristic
Symbol
Value
Unit
KA5S0965
Maximum Drain Voltage
V
D,MAX
650
V
Drain-Gate Voltage(R
GS
=1M
)
V
DGR
650
V
Gate-Source(GND) Voltage
V
GS
30
V
Drain Current Pulsed
(1)
I
DM
36
ADC
Continuous Drain Current (Tc = 25
C)
I
D
9.0
ADC
Continuous Drain Current (Tc = 100
C)
I
D
5.8
ADC
Single Pulsed Avalanch Current
(3)
(Energy
(2)
)
I
AS
(E
AS
)
28(950)
A(mJ)
Maximum Supply Voltage
V
CC,MAX
30
V
Input Voltage Range
V
FB
-0.3 to V
CC
V
V
SS
-0.3 to 8
V
Total Power Dissipation
P
D
(Watt H/S)
170
W
Derating
1.33
W /
C
Operating Junction Temperature.
T
J
+160
C
Operating Ambient Temperature.
T
A
-25 to +85
C
Storage Temperature Range.
T
STG
-55 to +150
C
KA5S12656
Maximum Drain Voltage
V
D,MAX
650
V
Drain-Gate Voltage(R
GS
=1M
)
V
DGR
650
V
Gate-Source(GND) Voltage
V
GS
30
V
Drain Current Pulsed
(1)
I
DM
48
ADC
Continuous Drain Current (Tc = 25
C)
I
D
12
ADC
Continuous Drain Current (Tc = 100
C)
I
D
8.4
ADC
Single Pulsed Avalanch Current
(3)
(Energy
(2)
)
I
AS
(E
AS
)
30(785)
A(mJ)
Maximum Supply Voltage
V
CC,MAX
30
V
Input Voltage Range
V
FB
-0.3 to V
CC
V
V
SS
-0.3 to 8
V
Total Power Dissipation
P
D
(Watt H/S)
160
W
Derating
1.28
W /
C
Operating Junction Temperature.
T
J
+160
C
Operating Ambient Temperature.
T
A
-25 to +85
C
Storage Temperature Range.
T
STG
-55 to +150
C
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/KA5S1265
4
Absolute Maximum Ratings (Continued)
(Ta=25
C, unless otherwise specified)
Note:
1. Repetitive rating : Pulse width limited by maximum junction temperature
2. L = 10mH, V
DD
=50V, R
G
= 27
, starting Tj = 25
C
3. L = 13uH, starting Tj = 25
C
Characteristic
Symbol
Value
Unit
KA5S1265
Maximum Drain Voltage
V
D,MAX
650
V
Drain-Gate Voltage(R
GS
=1M
)
V
DGR
650
V
Gate-Source(GND) Voltage
V
GS
30
V
Drain Current Pulsed
(1)
I
DM
48
ADC
Continuous Drain Current (Tc = 25
C)
I
D
12
ADC
Continuous Drain Current (Tc = 100
C)
I
D
8.4
ADC
Single Pulsed Avalanch Current
(3)
(Energy
(2)
)
I
AS
(E
AS
)
30(785)
A(mJ)
Maximum Supply Voltage
V
CC,MAX
30
V
Input Voltage Range
V
FB
-0.3 to V
CC
V
V
SS
-0.3 to 8
V
Total Power Dissipation
P
D
(Watt H/S)
160
W
Derating
1.28
W /
C
Operating Junction Temperature.
T
J
+160
C
Operating Ambient Temperature.
T
A
-25 to +85
C
Storage Temperature Range.
T
STG
-55 to +150
C
KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/
5
Electrical Characteristics (SFET Part)
(Ta = 25
C unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
KA5S0765C
Drain-source breakdown voltage
BV
DSS
V
GS
=0V, I
D
=50
A
650
-
-
V
Zero gate voltage drain current
I
DSS
V
DS
=Max., Rating, V
GS
=0V
-
-
50
A
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125
C
-
-
200
A
Static drain-source on resistance
(1)
R
DS
(on)
V
GS
=10V, I
D
=4.0A
-
1.25
1.6
Forward transconductance
(1)
gfs
V
DS
=15V, I
D
=4.0A
3.0
-
-
S
Input capacitance
Ciss
V
GS
=0V, V
DS
=25V,
f = 1MHz
-
1600
-
pF
Output capacitance
Coss
-
310
-
Reverse transfer capacitance
Crss
-
120
-
Turn on delay time
td(on)
V
DD
=0.5BV
DSS
, I
D
=7.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
-
25
-
nS
Rise time
tr
-
55
-
Turn off delay time
td(off)
-
80
-
Fall time
tf
-
50
-
Total gate charge
(gate-source+gate-drain)
Qg
V
GS
=10V, I
D
=7.0A,
V
DS
=0.5BV
DSS
(MOSFET
Switching time are
Essentially independent of
Operating temperature)
-
-
72
nC
Gate-source charge
Qgs
-
9.3
-
Gate-drain (Miller) charge
Qgd
-
29.3
-
KA5S09654QT
Drain-source breakdown voltage
BV
DSS
V
GS
=0V, I
D
=50
A
650
-
-
V
Zero gate voltage drain current
I
DSS
V
DS
=Max., Rating, V
GS
=0V
-
-
200
A
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125
C
-
-
300
A
Static drain-source on resistance
(1)
R
DS
(on)
V
GS
=10V, I
D
=4.5A
-
1.1
1.2
Forward transconductance
(1)
gfs
V
DS
=50V, I
D
=4.5A
3.0
-
-
S
Input capacitance
Ciss
V
GS
=0V, V
DS
=25V,
f = 1MHz
-
1300
-
pF
Output capacitance
Coss
-
135
-
Reverse transfer capacitance
Crss
-
25
-
Turn on delay time
td(on)
V
DD
=0.5BV
DSS
, I
D
=9.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
-
25
-
nS
Rise time
tr
-
75
-
Turn off delay time
td(off)
-
130
-
Fall time
tf
-
70
-
Total gate charge
(gate-source+gate-drain)
Qg
V
GS
=10V, I
D
=9.0A,
V
DS
=0.5BV
DSS
(MOSFET
Switching time are
Essentially independent of
Operating temperature)
45
-
nC
Gate-source charge
Qgs
-
8
-
Gate-drain (Miller) charge
Qgd
-
22
-