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2000 Fairchild Semiconductor International
Rev. A, February 2000
KSB601
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
* PW
10ms, Duty Cycle
50%
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
- 100
V
V
CEO
Collector-Emitter Voltage
- 100
V
V
EBO
Emitter-Base Voltage
- 7
V
I
C
Collector Current (DC)
- 5
A
I
CP
*Collector Current (Pulse)
- 8
A
I
B
Base Current
- 0.5
A
P
C
Collector Dissipation (T
a
=25
C)
1.5
W
P
C
Collector Dissipation (T
C
=25
C)
30
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 55 ~ 150
C
KSB601
Low Frequency Power Amplifier
Medium Speed Switching Industrial Use
Complement to KSD560
1.Base 2.Collector 3.Emitter
1
TO-220
2000 Fairchild Semiconductor International
Rev. A, February 2000
KSB601
Electrical Characteristics
T
C
=25
C unless otherwise noted
* Pulse Test: PW
350
s, Duty Cycle
2%
h
FE
Classification
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
CEO
(sus)
Collector-Emitter Sustaining Voltage
I
C
= - 3A, I
B1
= - 3mA,
L = 1mH
-
100
V
V
CEX
(sus)1
Collector-Emitter Sustaining Voltage
I
C
= - 3A, I
B1
= - I
B2
= - 3mA
V
BE
(off) = 5V, L =180
H
Clamped
-
100
V
V
CEX
(sus)2
Collector-Emitter Sustaining Voltage
I
C
= - 6A, I
B1
= - 12mA
I
B2
= 3mA, V
BE
(off) = 5V
L = 180uH, Clamped
-
100
V
I
CBO
Collector Cut-off Current
V
CB
= - 100V, I
E
= 0
- 10
A
I
CER
Collector Cut-off Current
V
CE
= - 100V, R
BE
= 51
T
C
= 125
C
- 1
mA
I
CEX1
Collector Cut-off Current
V
CE
= - 100V, V
BE
(off) = 1.5V
- 10
A
I
CEX2
Collector Cut-off Current
V
CE
= - 100V, V
BE
(off) = 1.5V
T
C
= 125
C
- 1
mA
I
EBO
Emitter Cut-off Current
V
EB
= - 5V, I
C
= 0
- 3
mA
h
FE1
h
FE2
*DC Current Gain
V
CE
= - 2V, I
C
= - 3A
V
CE
= - 2V, I
C
= - 5A
2000
500
15000
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= - 3A, I
B
= - 3mA
- 1.5
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
I
C
= - 3A, I
B
= - 3mA
- 2
V
t
ON
Turn ON Time
V
CC
= - 50V , I
C
= - 3A
I
B1
= - I
B2
= - 3mA
R
L
= 17
0.5
s
t
S
Storage
1
s
t
F
Fall time
1
s
Classification
R
O
Y
h
FE1
2000 ~ 5000
3000 ~ 7000
5000 ~ 15000
2000 Fairchild Semiconductor International
KSB601
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Safe Operating Area
Figure 5. Reverse Bias Safe Operating Areas
Figure 6. Derating Curve of Safe Operating Areas
-0
-1
-2
-3
-4
-5
-1
-2
-3
-4
-5
I
B
= -1.0mA
I
B
= -6mA
I
B
= -4mA
I
B
= -0.8mA
I
B
= -1.
5mA
I
B
= -0.6mA
I
B
=
-2
m
A
I
B
= -10mA
I
B
= -0.4mA
I
C
[
A
]
,
CO
LLE
CT
O
R
CURRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-0.01
-0.1
-1
-10
10
100
1000
10000
V
CE
= -2V
h
FE
, DC
CURRE
NT
G
A
I
N
I
C
[A], COLLECTOR CURRENT
-0.1
-1
-10
-100
-0.1
-1
-10
V
CE
(sat)
V
BE
(sat)
I
C
= 1000 I
B
V
CE
(sa
t
)
[
V
],V
BE
(
s
a
t
)
[
V]
SAT
U
R
AT
I
O
N VO
L
T
A
G
E
I
C
[A], COLLECTOR CURRENT
-1
-10
-100
-0.001
-0.01
-0.1
-1
-10
100ms
10m
s
1m
s
100us
300us
50us
s/b
L
imi
te
d
Diss
ipat
ion
Lim
ited
I
C
[A], COL
L
ECT
O
R
C
URRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-20
-40
-60
-80
-100
-120
-140
-160
-0
-2
-4
-6
-8
-10
-12
-14
-16
I
C
[A],
COL
L
ECT
O
R
CURREN
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
25
50
75
100
125
150
175
200
0
20
40
60
80
100
120
140
160
Di
ssipat
ion Li
mite
d
s/b Li
mite
d
d
T
[%], Ic
DERAT
I
NG
T
C
[
o
C], CASE TEMPERATURE
2000 Fairchild Semiconductor International
KSB601
Rev. A, February 2000
Typical Characteristics
(Continued)
Figure 7. Power Derating
25
50
75
100
125
150
175
200
0
5
10
15
20
25
30
35
40
P
C
[W
], P
O
W
E
R
D
I
S
S
I
P
A
T
IO
N
T
C
[
o
C], CASE TEMPERATURE
4.50
0.20
9.90
0.20
1.52
0.10
0.80
0.10
2.40
0.20
10.00
0.20
1.27
0.10
3.60
0.10
(8.70)
2.80
0.10
15.90
0.20
10.08
0.30
18.95MAX.
(1.70)
(3.70)
(3.00)
(1.46)
(1.00)
(45
)
9.20
0.20
13.08
0.20
1.30
0.10
1.30
+0.10
0.05
0.50
+0.10
0.05
2.54TYP
[2.54
0.20
]
2.54TYP
[2.54
0.20
]
TO-220
Package Demensions
2000 Fairchild Semiconductor International
Rev. A, February 2000
KSB601
Dimensions in Millimeters
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