2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC233
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
Electrical Characteristics
T
a
=25
C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Ratings
Units
V
CBO
Collector-Base Voltage
80
V
V
CEO
Collector-Emitter Voltage
60
V
V
EBO
Emitter-Base Voltage
8
V
I
C
Collector Current
700
mA
P
C
Collector Power Dissipation
1
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
=100
A, I
E
=0
80
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
=10mA, I
B
=0
60
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
=10
A, I
C
=0 8
V
I
CBO
Collector Cut-off Current
V
CB
=60V, I
E
=0 0.1
A
I
EBO
Emitter Cut-off Current
V
EB
=5V, I
C
=0
0.1
A
h
FE
DC Current Gain
V
CE
=2V, I
C
=50mA
40
240
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=500mA, I
B
=50mA 0.2
0.7
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
=500mA, I
B
=50mA 0.86
1.20
V
f
T
Current Gain Bandwidth Product
V
CE
=10V, I
C
=50mA
30
50
MHz
C
ob
Output Capacitance
V
CB
=10V, I
E
=0, f=1MHz
8
pF
Classification R
O
Y
h
FE
40 ~ 80
70 ~ 140
120 ~ 240
KSC2331
Low Frequency Amplifier & Medium Speed
Switching
Complement to KSA931
High Collector-Base Voltage : V
CBO
=80V
Collector Current : I
C
=700mA
Collector Dissipation : P
C
=1W
TO-92L
1
1. Emitter 2. Collector 3. Base
2002 Fairchild Semiconductor Corporation
KSC233
1
Rev. A2, September 2002
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Figure 5. Safe Operating Area
Figure 6. Power Derating
0
5
10
15
20
25
30
35
40
45
50
55
0
20
40
60
80
100
120
140
160
180
200
I
B
= 1.2mA
I
B
= 0.2mA
I
B
= 1.4mA
I
B
= 1.0mA
I
B
= 0.8mA
I
B
= 0.6mA
I
B
= 0.4mA
I
C
[m
A]
, COL
L
E
C
T
O
R CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
1
10
100
1000
0
40
80
120
160
200
240
V
CE
= 2V
h
FE
, DC CU
RRENT
GAIN
I
C
[mA], COLLECTOR CURRENT
1
10
100
1000
0.01
0.1
1
10
I
C
= 10 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(s
a
t
),
V
CE
(s
a
t
)[
V
]
,
SA
TU
R
A
TIO
N
VO
L
T
A
G
E
I
C
[mA], COLLECTOR CURRENT
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
V
CE
= 2V
I
C
[m
A
], CO
L
L
E
C
T
O
R
C
URRE
NT
V
BE
[V], BASE-EMITTER VOLTAGE
1
10
100
1000
10
100
1000
10000
1. T
a
= 25
o
C
2. *Single Pulse
DC
*200m
s
I
C
[m
A], CO
L
L
E
C
T
O
R CURR
E
N
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
P
C
[
W
]
,
PO
WER
DI
SSI
PA
TI
O
N
T
a
[
o
C], AMIBIENT TEMPERATURE
2002 Fairchild Semiconductor Corporation
Rev. I1
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intended to be an exhaustive list of all such trademarks.
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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Definition of Terms
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Advance Information
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Design
This datasheet contains the design specifications for
product development. Specifications may change in
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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This datasheet contains final specifications. Fairchild
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