2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC269
0/2
690A
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
* PW
10ms, Duty Cycle
50%
Electrical Characteristics
T
C
=25
C unless otherwise noted
* Pulse Test: PW
350
s, Duty Cycle
2% Pulsed
h
FE
Classificntion
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
: KSC2690
: KSC2690A
120
160
V
V
V
CEO
Collector- Emitter Voltage
: KSC2690
: KSC2690A
120
160
V
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current (DC)
1.2
A
I
CP
*Collector Current (Pulse)
2.5
A
I
B
Base Current(DC)
0.3
A
P
C
Collector Dissipation (T
a
=25
C)
1.2
W
P
C
Collector Dissipation (T
C
=25
C)
20
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
I
CBO
Collector Cut-off Current
V
CB
= 120V, I
E
= 0
1
A
I
EBO
Emitter Cut-off Current
V
EB
= 3V, I
C
= 0
1
A
h
FE1
h
FE2
* DC Current Gain
V
CE
= 5V, I
C
= 5mA
V
CE
= 5V, I
C
= 0.3A
35
60
105
140
320
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= 1A, I
B
= 0.2A
0.4
0.7
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
I
C
= 1A, I
B
= 0.2A
1
1.3
V
f
T
Current Gain Bandwidth Product
V
CE
= 5V, I
C
= 0.2A
155
MHz
C
ob
Output Capacitance
V
CB
=10V, I
E
=0, f = 1MHz
19
pF
Classification
R
O
Y
h
FE2
60 ~ 120
100 ~ 200
160 ~ 320
KSC2690/2690A
Audio Frequency
High Frequency Power Amplifier
Complement to KSA1220/KSA1220A
1
TO-126
1. Emitter 2.Collector 3.Base
2000 Fairchild Semiconductor International
KSC269
0/2
690A
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
Figure 5. Current Gain Bandwidth Product
Figure 6. Safe Operating Area
0
10
20
30
40
50
60
70
80
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
B
=0mA
I
B
=1mA
I
B
=2mA
I
B
=3mA
I
B
=4mA
I
B
=5mA
I
B
=6mA
I
B
=7mA
I
B
=8mA
I
B
=9mA
I
B
=10mA
Pulse Test
I
C
[A], C
O
L
L
EC
TOR
CU
RRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
1E-3
0.01
0.1
1
10
1
10
100
1000
V
CE
= 5V
Pulse Test
0.001
h
FE
,
DC CU
RRENT G
A
I
N
I
C
[A], COLLECTOR CURRENT
1E-3
0.01
0.1
1
10
0.01
0.1
1
10
I
C
= 5 I
B
Pulse Test
V
CE
(sat)
V
BE
(sat)
V
BE
(s
a
t
)
,
V
CE
(
s
a
t
)
[
V]
,
SA
TURATI
O
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
1
10
100
1000
1
10
100
1000
f = 1MHz
I
E
= 0
C
ob
[
p
F
]
,
CAPACI
T
A
N
CE
V
CB
[V], COLLECTOR-BASE VOLTAGE
0.01
0.1
1
1
10
100
1000
V
CE
= 5V
Pulse Test
f
T
[M
Hz],
CURRE
NT
G
A
I
N
B
A
NDWIDT
H
P
R
O
DUCT
I
C
[A], COLLECTOR CURRENT
1
10
100
1000
0.01
0.1
1
10
KSC2690A
V
CEO
MAX
KSC2690 V
CEO
MAX
Dissipat
ion
Limite
d
PW
=
100
us
1m
s
10
m
s
DC
(P
W = 50m
s)
S/b Li
m
ite
d
I
C
(max) Pulse
I
C
(max) DC
I
C
[
A
]
,
CO
L
L
E
CT
O
R
CURR
E
N
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
2000 Fairchild Semiconductor International
Rev. E
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACExTM
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2
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FASTrTM
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ISOPLANARTM
MICROWIRETM
POPTM
PowerTrench
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Quiet SeriesTM
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Definition
Advance Information
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Design
This datasheet contains the design specifications for
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This datasheet contains preliminary data, and
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