2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC275
7
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
Electrical Characteristics
T
a
=25
C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
30
V
V
CEO
Collector-Emitter Voltage
15
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current
50
mA
P
C
Collector Power Dissipation
150
mW
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-55 ~ +150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
I
CBO
Collector Cut-off Current
V
CB
=12V, I
E
=0
0.1
A
h
FE
DC Current Gain
V
CE
=10V, I
C
=5mA
60
120
240
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=10mA, I
B
=1mA 0.5
V
f
T
Current Gain Bandwidth Product
V
CE
=10V, I
C
=5mA 800
1100
MHz
C
ob
Output Capacitance
V
CB
=10V, I
E
=0, f=1MHz
1.5
pF
C
crbb'
Noise Figure
V
CE
=10V, I
C
=5mA
f=31.9MHz
10
1.5
ps
Classification R
O
Y
h
FE
60 ~ 120
90 ~ 180
120 ~ 240
1. Base 2. Emitter 3. Collector
KSC2757
Mixer Oscillator for VHF Tuner
High Current Gain Bandwidth Product : f
T
=1100MHz (TYP)
H3O
Marking
h
FE
grade
1
2
3
SOT-23
2002 Fairchild Semiconductor Corporation
KSC275
7
Rev. A2, September 2002
Typical Characteristics
Figure 1. Static Characteristics
Figure 2. DC Current Gain
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
Figure 5. f
T
- I
C
Figure 6. Output Capacitance
0
5
10
15
20
25
0
4
8
12
16
20
I
B
= 180
A
I
B
= 40
A
I
B
= 140
A
I
B
= 120
A
I
B
= 100
A
I
B
= 80
A
I
B
= 160
A
I
B
= 60
A
I
B
= 20
A
I
C
[
m
A]
,
COL
L
ECT
O
R
CU
RRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.1
1
10
100
1
10
100
1000
V
CE
= 10V
h
FE
, D
C
CURRENT
G
A
IN
I
C
[mA], COLLECTOR CURRENT
0.1
1
10
100
10
100
1000
I
C
= 10 I
B
V
CE
(
s
a
t
)
[
m
V
]
,
SAT
UR
AT
I
O
N
VO
L
T
AG
E
I
C
[mA], COLLECTOR CURRENT
0.1
1
10
100
100
1000
10000
I
C
= 10 I
B
V
BE
(
s
a
t
)
[
m
V
]
,
SATURATI
O
N
VO
L
T
AG
E
I
C
[mA], COLLECTOR CURRENT
0.1
1
10
100
10
100
1000
10000
V
CE
= 10V
f
T
[M
Hz]
,
CU
RREN
T
G
A
IN
BANDWI
D
T
H
PRO
D
U
C
T
I
C
[mA], COLLECTOR CURRENT
0.1
1
10
100
0.1
1
10
100
f = 1MHz
I
E
=0
C
ob
[
p
F
]
,
O
U
T
P
UT
CAPAC
I
T
ANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
2002 Fairchild Semiconductor Corporation
Rev. I1
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when properly used in accordance with instructions for use
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device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
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Advance Information
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This datasheet contains the design specifications for
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This datasheet contains final specifications. Fairchild
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