2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC278
4
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
Electrical Characteristics
T
a
=25
C unless otherwise noted
h
FE2
Classification
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
120
V
V
CEO
Collector-Emitter Voltage
120
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current
50
mA
I
B
Base Current
10
mA
P
C
Collector Power Dissipation
300
mW
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
I
CBO
Collector Cut-off Current
V
CB
=120V, I
E
=0
50
nA
I
EBO
Emitter Cut-off Current
V
EB
=5V, I
C
=0
50
nA
h
FE1
h
FE2
DC Current Gain
V
CE
=6V, I
C
=0.1mA
V
CE
=6V, I
C
=1mA
150
200
580
600
1200
V
BE
(on)
Base Emitter On Voltage
V
CE
=6V, I
C
=1mA
0.55
0.59
0.65
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=10mA, I
B
=1mA
0.07
0.3
V
f
T
Current Gain Bandwidth Product
V
CE
=6V, I
C
=1mA
50
110
MHz
C
ob
Output Capacitance
V
CB
=30V, I
E
=0, f=1MHz
1.6
2.5
pF
NL
Noise Level
25
40
mV
Classification
P
F
E
U
h
FE2
200 ~ 400
300 ~ 600
400 ~ 800
600 ~ 1200
KSC2784
Audio Frequency Low Noise Amplifier
Complement to KSA1174
1.Emitter 2. Collector 3. Base
TO-92S
1
2002 Fairchild Semiconductor Corporation
KSC278
4
Rev. A2, September 2002
Typical Characteristics
Figure 1. Static Characteristics
Figure 2. Static Characteristics
Figure 3. DC Currnet Gain
Figure 4. Saturation Voltage
Figure 5. f
T
- I
C
Figure 6. Output Capacitance
0
1
2
3
4
5
0
2
4
6
8
10
I
B
= 8
A
I
B
= 4
A
I
B
= 12
A
I
B
= 16
A
I
B
= 14
A
I
B
= 10
A
I
B
= 6
A
I
B
= 2
A
I
C
[
m
A
]
,
CO
L
L
E
CT
O
R
CUR
RENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
20
40
60
80
100
0.0
0.2
0.4
0.6
0.8
1.0
I
B
= 1.4
A
I
B
= 1.2
A
I
B
= 1.0
A
I
B
= 0.8
A
I
B
= 0.6
A
I
B
= 0.4
A
I
B
= 0.2
A
I
C
[
m
A]
,
CO
L
L
E
CT
OR
CU
RRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.01
0.1
1
10
100
0
200
400
600
800
1000
V
CE
= 6 V
Pulse Test
h
FE
,
DC CUR
RE
NT
G
A
IN
I
C
[mA], COLLECTOR CURRENT
0.1
1
10
100
0.01
0.1
1
10
I
C
= 10 I
B
Pulse Test
V
BE
(sat)
V
CE
(sat)
V
CE
(s
a
t
), V
BE
(
s
a
t
)
[
V
]
,
SATURATI
O
N
VO
L
T
AG
E
I
C
[mA], COLLECTOR CURRENT
0.1
1
10
100
10
100
1000
10000
V
CE
= 10V
f
T
[M
H
z
], C
URREN
T
GAI
N
BAND
W
IDT
H
PRO
DUCT
I
C
[mA], COLLECTOR CURRENT
1
10
100
0.1
1
10
f = 1 MHz
I
E
= 0
C
ob
[
p
F
]
,
O
U
T
P
U
T
CAPACI
T
AN
CE
V
CB
[V], COLLECTOR-BASE VOLTAGE
2002 Fairchild Semiconductor Corporation
Rev. I1
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when properly used in accordance with instructions for use
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device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
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