2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC278
6
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
Electrical Characteristics
T
a
=25
C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
30
V
V
CEO
Collector-Emitter Voltage
20
V
V
EBO
Emitter-Base Voltage
4
V
I
C
Collector Current
20
mA
P
C
Collector Power Dissipation
250
mW
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
=10
A, I
E
=0
30
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
=5mA, I
B
=0
20
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
=10
A, I
C
=0
4
V
I
CBO
Collector Cut-off Current
V
CB
=30V, I
E
=0
0.1
A
I
EBO
Emitter Cut-off Current
V
EB
=4V, I
C
=0
0.1
A
h
FE
DC Current Gain
V
CE
=6V, I
C
=1mA
40
240
V
BE
(on)
Base-Emitter On Voltage
V
CE
=6V, I
C
=1mA
0.72
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=10mA, I
B
=1mA
0.1
0.3
V
f
T
Current Gain Bandwidth Product
V
CE
=6V, I
C
=1mA
400
600
MHz
C
ob
Output Capacitance
V
CB
=6V, I
E
=0, f=1MHz
1.2
pF
C
crbb'
Collector-Base Time Constant
V
CE
=6V, I
C
=1mA
f=31.9MHz
12
15
ps
NF
Noise Figure
V
CE
=6V, I
C
=1mA
R
S
=50
, f=100MHz
3.0
5.0
dB
G
PE
Power Gain
V
CE
=6V, I
C
=1mA
f=100MHz
18
22
dB
Classification R
O
Y
h
FE
40 ~ 80
70 ~ 140
120 ~ 240
KSC2786
TV PIF Amplifier, FM Tuner RF Amplifier,
Mixer, Oscillator
High Current Gain Bandwidth Product : f
T
=600MHz (TYP)
High Power Gain : G
PE
=22dB at f=100MHz
1.Emitter 2. Collector 3. Base
TO-92S
1
2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC278
6
Typical Characteristics
Figure 1. Static Characteristics
Figure 2. Base-Emitter On Voltage
Figure 3. DC Current Gain
Figure 4. f
T
- I
C
Figure 5. Saturation Voltage
Figure 6. Output Capacitance
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
18
20
I
B
= 60
A
I
B
= 30
A
I
B
= 70
A
I
B
= 20
A
I
B
= 110
A
I
B
= 100
A
I
B
= 90
A
I
B
= 80
A
I
B
= 50
A
I
B
= 40
A
I
B
= 10
A
I
C
[
m
A]
,
COL
L
ECT
O
R
CU
RRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1
10
V
CE
= 6 V
I
C
[m
A
], C
O
L
L
E
C
T
O
R CU
RRE
NT
V
BE
[V], BASE-EMITTER VOLTAGE
1
10
10
100
1000
V
CE
= 6V
h
FE
, DC
CUR
RE
N
T
G
A
IN
I
C
[mA], COLLECTOR CURRENT
1
10
100
10
100
1000
10000
V
CE
= 6V
f
T
[M
Hz],
CURR
ENT
G
A
IN BAN
DWID
T
H
PRO
DUC
T
I
C
[mA], COLLECTOR CURRENT
0.1
1
10
0.01
0.1
1
10
I
C
= 10 I
B
V
BE
(sat)
V
CE
(sat)
V
BE
(s
a
t
),
V
CE
(
s
a
t
)
[
V]
,
SATURA
T
I
O
N
VO
L
T
AG
E
I
C
[mA], COLLECTOR CURRENT
1
10
100
0.1
1
10
f = 1MHz
I
E
= 0
C
ob
[
p
F
]
,
OUT
P
UT
CAP
A
CI
T
A
NCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
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