2002 Fairchild Semiconductor Corporation
Rev. B, September 2002
KSC307
3
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Electrical Characteristics
T
C
=25
C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
30
V
V
CEO
Collector-Emitter Voltage
30
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current
3
A
I
B
Base Current
0.6
A
P
C
Collector Dissipation (T
a
=25
C)
1
W
Collector Dissipation (T
C
=25
C)
15
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= 10mA, I
B
= 0
30
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= 1mA, I
C
= 0
5
V
I
CBO
Collector Cut-off Current
V
CB
= 20V, I
E
= 0
1
A
I
EBO
Emitter Cut-off Current
V
EB
= 5V, I
C
= 0
1
A
h
FE1
h
FE2
DC Current Gain
V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
= 2.5A
70
25
240
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 2A, I
B
= 0.2A
0.3
0.8
V
V
BE
(on)
Base-Emitter On Voltage
V
CE
= 2V,I
C
= 0.5A
0.75
1
V
f
T
Current Gain Bandwidth Product
V
CE
= 2V, I
C
= 0.5A
100
MHz
C
ob
Output Capacitance
V
CB
= 10V, f =1MHz
35
pF
Classification
O
Y
h
FE1
70 ~ 140
120 ~ 240
KSC3073
Power Amplifier Application
Complement to KSA1243
1. Base 2. Collector 3. Emitter
I-PAK
1
2002 Fairchild Semiconductor Corporation
KSC307
3
Rev. B, September 2002
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter on Voltage
Figure 5. Safe Operating Area
Figure 6. Power Derating
0.0
0.8
1.6
2.4
3.2
4.0
4.8
5.6
6.4
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
I
B
= 20m
A
I
B
=
30m
A
I
B
=
40m
A
I
B
= 15mA
I
B
= 10mA
I
B
= 5mA
I
B
= 3mA
I
B
= 0
I
C
[A
], CO
L
L
E
C
T
O
R
C
URRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
1E-3
0.01
0.1
1
10
1
10
100
1000
V
CE
= 2V
h
FE
, DC C
URRE
NT
G
A
I
N
I
C
[A], COLLECTOR CURRENT
1E-3
0.01
0.1
1
10
0.01
0.1
1
10
V
CE
(
s
a
t
)
[
V]
,
S
A
T
U
R
A
T
I
O
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
CE
= -2V
I
C
[A], CO
L
L
ECT
O
R CUR
RENT
V
BE
[V], BASE-EMITTER VOLTAGE
0.1
1
10
100
0.01
0.1
1
10
V
CE
O
MA
X
.
1m
s
10
m
s
DC
I
C
MAX. (Pulse)
I
C
MAX. (DC)
I
C
[
A
]
,
CO
L
L
E
CT
O
R
CURR
E
N
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
0
3
6
9
12
15
18
21
24
P
C
[W
], P
O
W
E
R
D
I
S
S
I
P
A
T
IO
N
T
C
[
o
C], CASE TEMPERATURE
2002 Fairchild Semiconductor Corporation
Rev. I1
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intended to be an exhaustive list of all such trademarks.
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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Definition of Terms
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Definition
Advance Information
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Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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No Identification Needed
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This datasheet contains final specifications. Fairchild
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