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2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC350
2
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Electrical Characteristics
T
C
=25
C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
200
V
V
CEO
Collector-Emitter Voltage
200
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current (DC)
100
mA
I
CP
Collector Current (Pulse)
200
mA
P
C
Collector Dissipation (T
C
=25
C)
5
W
P
C
Collector Dissipation (T
a
=25
C)
1.2
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
E
= 0
200
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= 1mA, I
B
= 0
200
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
5
V
I
CBO
Collector Cut-off Current
V
CB
= 150V, I
E
= 0
0.1
A
I
EBO
Emitter Cut-off Current
V
EB
= 4V, I
C
= 0
0.1
A
h
FE
DC Current Gain
V
CE
= 10V, I
C
= 10mA
40
320
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 20mA, I
B
= 2mA
0.6
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 20mA, I
B
= 2mA
1
V
f
T
Current Gain Bandwidth Product
V
CE
= 30V, I
C
= 10mA
150
MHz
C
ob
Output Capacitance
V
CB
= 30V, f= 1MHz
1.7
pF
C
re
Reverse Transfer Capacitance
V
CB
= 30V, f= 1MHz
1.2
pF
Classification
C
D
E
F
h
FE
40 ~ 80
60 ~ 120
100 ~ 200
160 ~ 320
KSC3502
CRT Display, Video Output
High Voltage : V
CEO
=200V
Low Reverse Transfer Capacitance: C
re
=1.2pF @ V
CB
=30V
1
TO-126
1. Emitter 2.Collector 3.Base
2000 Fairchild Semiconductor International
KSC350
2
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. Static Characteristic
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage
Figure 6. Collector Output Capacitance
0
2
4
6
8
10
0
4
8
12
16
20
I
B
= 160
A
I
B
= 140
A
I
B
= 120
A
I
B
= 100
A
I
B
= 80
A
I
B
= 60
A
I
B
= 40
A
I
B
= 20
A
I
B
= 0
I
C
[
m
A
], CO
L
L
E
C
T
O
R CURRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
20
40
60
80
100
0
2
4
6
8
10
I
B
= 80
A
I
B
= 70
A
I
B
= 60
A
I
B
= 50
A
I
B
= 40
A
I
B
= 30
A
I
B
= 20
A
I
B
= 10
A
I
B
= 0
I
C
[
m
A
], CO
L
L
E
C
T
O
R CURRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.1
1
10
100
1000
1
10
100
1000
V
CE
= 10V
h
FE
, DC C
URRENT
GAI
N
I
C
[mA], COLLECTOR CURRENT
0.1
1
10
100
0.01
0.1
1
10
I
C
= 10 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(s
a
t
)
,
V
CE
(
s
a
t
)
[
V],
SA
T
U
R
A
T
I
O
N
VO
L
T
AG
E
I
C
[mA], COLLECTOR CURRENT
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
20
40
60
80
100
120
140
160
V
CE
= 10V
I
C
[m
A], CO
L
L
ECT
O
R CUR
RENT
V
BE
[V], BASE-EMITTER VOLTAGE
0.1
1
10
100
1000
0.1
1
10
100
f = 1MHz
C
ob
[p
F
], CAPA
C
I
T
A
NC
E
V
CB
[V], COLLECTOR-BASE VOLTAGE
2000 Fairchild Semiconductor International
KSC350
2
Rev. A, February 2000
Typical Characteristics
(Continued)
Figure 7. Reverse Transfer Capacitance
Figure 8. Current Gain Dandwidth Product
Figure 9. Safe Operating Area
Figure 10. Power Derating
0.1
1
10
100
1000
0.1
1
10
100
f=1MHz
C
re
[
p
F]
,
CAPACI
T
ANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
0.1
1
10
100
1000
1
10
100
1000
V
CE
= 30V
f
T
[M
H
z
], CU
RRE
NT
G
A
IN
B
A
ND
WIDT
H P
R
O
DUCT
I
C
[mA], COLLECTOR CURRENT
1
10
100
1000
1
10
100
1000
DC (T
a
=
25
o
C)
50
0
s
10ms
1ms
DC (T
c
=
25
o
C)
I
C
MAX. (Pulse)
I
C
MAX.
I
C
[m
A
]
, CO
L
L
E
C
T
O
R CUR
RENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
8
T
a
T
c
P
C
[
W
], PO
W
E
R DI
S
S
IPAT
IO
N
T[
o
C], TEMPERATURE
Package Demensions
2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC350
2
Dimensions in Millimeters
3.25
0.20
8.00
0.30
3.20
0.10
0.75
0.10
#1
0.75
0.10
2.28TYP
[2.28
0.20]
2.28TYP
[2.28
0.20]
1.60
0.10
11.00
0.20
3.90
0.10
14.20MAX
16.10
0.20
13.06
0.30
1.75
0.20
(0.50)
(1.00)
0.50
+0.10
0.05
TO-126
2000 Fairchild Semiconductor International
Rev. E
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MICROWIRETM
POPTM
PowerTrench
QFETTM
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Quiet SeriesTM
SuperSOTTM-3
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SyncFETTM
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
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This datasheet contains final specifications. Fairchild
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