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Электронный компонент: KSC3953

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2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC395
3
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Electrical Characteristics
T
C
=25
C unless otherwise noted
h
FE
Classificntion
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
120
V
V
CEO
Collector-Emitter Voltage
120
V
V
EBO
Emitter-Base Voltage
3
V
I
C
Collector Current (DC)
200
mA
I
CP
Collector Current (Pulse)
400
mA
P
C
Collector Dissipation (T
a
=25
C)
1.3
W
P
C
Collector Dissipation (T
C
=25
C)
8
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
B
= 0
120
V
BV
EBO
Collector-Emitter Breakdown Voltage
I
C
= 1mA, R
BE
=
120
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= 100
A, I
C
= 0
3
V
I
CBO
Collector Cut-off Current
V
CB
= 80V, I
E
= 0
0.1
A
I
EBO
Emitter Cut-off Current
V
EB
= 2V, I
C
= 0
1.0
A
h
FE1
h
FE2
DC Current Gain
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 100mA
40
20
120
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 30mA, I
B
= 3mA
1.0
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 30mA, I
B
= 3mA
1.0
V
f
T
Current Gain Bandwidth Product
V
CE
= 10V,I
C
= 50mA
400
MHz
C
ob
Output Capacitance
V
CB
= 30V, f = 1MHz
2.1
pF
C
re
Reverse Transfer Capacitance
V
CB
= 30V, f = 1MHz
1.7
pF
Classification
C
D
h
FE1
40 ~ 80
60 ~ 120
KSC3953
CRT Display Video Output
High Current Gain Bandwidth Product : f
T
=400MHz(Typ.)
High Collector-Emitter Voltage : V
CEO
=120V
Low Reverse Transfer Capacitance : C
re
=1.7pF(Typ.)
1
TO-126
1. Emitter 2.Collector 3.Base
2000 Fairchild Semiconductor International
KSC395
3
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance
Figure 6. Reverse Capacitance
0
4
8
12
16
20
0
20
40
60
80
100
I
B
= 0.9mA
I
B
= 0.8mA
I
B
= 0.7mA
I
B
= 0.6mA
I
B
= 0.5mA
I
B
= 0.4mA
I
B
= 0.3mA
I
B
= 0.2mA
I
B
= 0.1mA
I
B
= 0
I
C
[
m
A
]
,
CO
L
L
E
C
T
O
R
CURRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
1
10
100
1000
1
10
100
1000
V
CE
= 10V
h
FE
, DC C
URRENT
GAI
N
I
C
[mA], COLLECTOR CURRENT
1
10
100
1000
0.01
0.1
1
10
I
C
= 10 I
B
V
CE
(
s
a
t
)
[
V],
SA
T
U
R
A
T
I
O
N
VO
L
T
AG
E
I
C
[mA], COLLECTOR CURRENT
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
20
40
60
80
100
120
V
CE
= 10V
I
C
[m
A], CO
L
L
ECT
O
R CUR
RENT
V
BE
[V], BASE-EMITTER VOLTAGE
0.1
1
10
100
0.1
1
10
100
f = 1MHz
I
E
= 0
C
ob
[pF
], CA
P
A
C
I
T
A
NC
E
V
CB
[V], COLLECTOR-BASE VOLTAGE
0.1
1
10
100
0.1
1
10
100
f = 1MHz
I
E
= 0
C
re
[
p
F]
,
CAPACI
T
ANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
2000 Fairchild Semiconductor International
KSC395
3
Rev. A, February 2000
Typical Characteristics
(Continued)
Figure 7. Current Gain Bandwidth Product
Figure 8. Safe Operating Area
Figure 9. Power Derating
1
10
100
10
100
1000
V
CE
= 10V
f
T
[M
H
z
], CU
RRE
NT
G
A
IN
B
A
ND
WIDT
H P
R
O
DUCT
I
C
[mA], COLLECTOR CURRENT
1
10
100
1000
1
10
100
1000
T
C
= 25
o
C
I
C
MAX. (DC)
10
m
s
V
CE
O
M
AX.
1m
s
I
C
MAX. (Pulse)
I
C
[m
A], CO
L
L
E
C
T
O
R CURR
E
N
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
0
2
4
6
8
10
T
a
T
c
P
C
[W
], PO
W
E
R
D
I
SS
I
P
AT
IO
N
T[
o
C], TEMPERATURE
Package Demensions
2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC395
3
Dimensions in Millimeters
3.25
0.20
8.00
0.30
3.20
0.10
0.75
0.10
#1
0.75
0.10
2.28TYP
[2.28
0.20]
2.28TYP
[2.28
0.20]
1.60
0.10
11.00
0.20
3.90
0.10
14.20MAX
16.10
0.20
13.06
0.30
1.75
0.20
(0.50)
(1.00)
0.50
+0.10
0.05
TO-126
2000 Fairchild Semiconductor International
Rev. E
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACExTM
BottomlessTM
CoolFETTM
CROSSVOLTTM
E
2
CMOSTM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
GTOTM
HiSeCTM
ISOPLANARTM
MICROWIRETM
POPTM
PowerTrench
QFETTM
QSTM
Quiet SeriesTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogicTM
UHCTM
VCXTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.