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2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
KSC530
2DI
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Thermal Characteristics
T
C
=25
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
800
V
V
CEO
Collector-Emitter Voltage
400
V
V
EBO
Emitter-Base Voltage
12
V
I
C
Collector Current (DC)
2
A
I
CP
*Collector Current (Pulse)
5
A
I
B
Base Current (DC)
1
A
I
BP
*Base Current (Pulse)
2
A
P
C
Power Dissipation(T
C
=25
C)
25
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 55 ~ 150
C
Symbol
Characteristics
Rating
Unit
R
jc
Thermal Resistance
Junction to Case
5.0
C/W
R
ja
Junction to Ambient
83.3
KSC5302DI
High Voltage & High Speed
Power Switch Application
Built-in Free-wheeling Diode makes efficient anti saturation operation
Suitable for half-bridge light ballast Applications
No need to interest an h
FE
value because of low variable storage-time
spread even though corner spirit
Low base drive requirement
1. Base 2. Collector 3. Emitter
I-PAK
1
C
B
E
Equivalent Circuit
2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
KSC530
2DI
Electrical Characteristics
T
C
=25
C unless otherwise noted
*Pulse Test : Pulse Width=5, Duty cycles
10%
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
=1mA, I
E
=0
800
-
-
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
=5mA, I
B
=0
400
-
-
V
BV
EBO
Emitter Cut-off Current
I
E
=1mA, I
C
=0 12
-
-
V
I
CBO
Collector Cut-off Current
V
CB
=500V, I
E
=0
-
-
10
A
I
EBO
Emitter Cut-off Current
V
EB
= 9V, I
C
= 0
-
-
10
A
h
FE1
h
FE2
DC Current Gain
V
CE
=1V, I
C
=0.4A
V
CE
=1V,I
C
=1A
20
10
-
-
-
-
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=0.4A, I
B
=0.04A
I
C
=1A, I
B
=0.2A
-
-
-
-
0.4
0.5
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
=0.4A, I
B
=0.04A
I
C
=1A, I
B
=0.2A
-
-
-
-
0.9
1.0
V
V
C
ob
Output Capacitance
VCB
= 10V, f=1MHz
-
-
75
pF
t
ON
Turn On Time
V
CC
=300V, I
C
=1A
I
B1
= 0.2A, I
B2
=-0.5A
R
L
= 300
-
- 150
ns
t
STG
Storage Time
-
-
2
s
t
F
Fall Time
-
-
0.2
s
t
STG
Storage Time
V
CC
=15V,V
Z
=300V
I
C
= 0.8A,I
B1
= 0.16A
I
B2
= -0.16A
L
C
=200
H
-
-
2.35
s
t
F
Fall Time
-
-
150
ns
V
F
Diode Forward Voltage
I
F
= 0.4A
I
F
= 1A
-
-
-
-
1.2
1.5
V
V
t
rr
* Reverse Recovery Time
(di/dt = 10A/
s)
I
F
= 0.2A
I
F
= 0.4A
I
F
= 1A
-
-
-
800
1.0
1.4
-
-
-
ns
s
s
2002 Fairchild Semiconductor Corporation
KSC530
2DI
Rev. B1, December 2002
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. DC current Gain
Figure 4. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 5. Collector-Emitter Saturation Voltage
Figure 6. Base-Emitter Saturation Voltage
0
1
2
3
4
5
6
7
8
9
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
B
= 100mA
I
B
= 120mA
I
B
= 80mA
I
B
= 180mA
I
B
= 160mA
I
B
= 140mA
I
B
= 200mA
I
B
= 60mA
I
B
= 40mA
I
B
= 0
I
C
[
A
]
,
COL
L
E
C
T
O
R
CU
RRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.01
0.1
1
10
1
10
100
-25
o
C
25
o
C
T
a
= 125
o
C
V
CE
= 5V
h
FE
,
DC
CU
RRE
NT
G
A
I
N
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
1
10
100
-20
o
C
25
o
C
T
a
= 125
o
C
V
CE
= 1V
h
FE
,
DC
CU
RRE
NT
G
A
I
N
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
0.01
0.1
1
10
I
C
= 10 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(s
a
t
), V
CE
(s
a
t
)[V
], S
A
T
U
R
A
T
I
O
N
V
O
LT
A
G
E
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
0.01
0.1
1
10
-20
o
C
25
o
C
T
a
= 125
o
C
I
C
= 5I
B
V
CE
(
s
a
t
)
[
V], SAT
U
R
A
T
I
O
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
0.1
1
10
-20
o
C
25
o
C
T
a
= 125
o
C
I
C
= 5I
B
V
BE
(
s
a
t
)
,
SATU
R
A
T
I
O
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
2002 Fairchild Semiconductor Corporation
KSC530
2DI
Rev. B1, December 2002
Typical Characteristics
(Continued)
Figure 7. Switching Time
Figure 8. Forward Diode Voltage
Figure 9. Reverse Recovery Time
Figure 10. Collector Output Capacitance
Figure 11. Safe Operating Area
Figure 12. Power Derating
0.1
1
10
0.01
0.1
1
10
V
CC
= 300V
I
C
= 5I
B1
= -2.5I
B2
t
F
t
STG
t
ST
G
, t
F
[
s],
T
I
M
E
I
C
[A], COLLECTOR CURRENT
0.2
0.4
0.6
0.8
1.0
0.8
1.0
1.2
1.4
1.6
di/dt = 10A/
s
tr
r
[
s
]
,
RE
V
E
R
S
E
RE
CO
VE
RY
T
I
M
E
I
f
[A], FORWARD CURRENT
0.01
0.1
1
10
0.1
1
10
V
f
[
V
],
F
O
R
W
AR
D D
I
O
D
E
V
O
L
T
AG
E
I
F
[A], FORWARD DIODE CURRENT
1
10
100
1
10
100
1000
f = 1MHz
C
ob
[p
F
], CA
PAC
IT
AN
CE
V
CB
[V], COLLECTOR-BASE VOLTAGE
10
100
1000
0.01
0.1
1
10
100
10
s
DC
1
s
5ms
1ms
I
C
[
A
]
,
CO
LL
E
C
T
O
R CUR
RE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
0
10
20
30
40
P
C
[W
], P
O
W
E
R
DIS
S
IP
A
T
IO
N
T
C
[
o
C], CASE TEMPERATURE
Package Dimensions
2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
KSC530
2DI
Dimensions in Millimeters
6.60
0.20
0.76
0.10
MAX0.96
2.30TYP
[2.30
0.20]
2.30TYP
[2.30
0.20]
0.60
0.20
0.80
0.10
1.80
0.20
9.30
0.30
16.10
0.30
6.10
0.20
0.70
0.20
5.34
0.20
0.50
0.10
0.50
0.10
2.30
0.20
(0.50)
(0.50)
(4.34)
I-PAK
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