2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC533
8D/KSC533
8D
W
1
D2-PAK
TO-220
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
* Pulse Test : Pulse Width = 5ms, Duty Cycle
10%
Thermal Characteristics
T
C
=25
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
1000
V
V
CEO
Collector-Emitter Voltage
450
V
V
EBO
Emitter-Base Voltage
12
V
I
C
Collector Current (DC)
5
A
I
CP
*Collector Current (Pulse)
10
A
I
B
Base Current (DC)
2
A
I
BP
*Base Current (Pulse)
4
A
P
C
Power Dissipation(T
C
=25
C)
75
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 55 ~ 150
C
Symbol
Characteristics
Rating
Unit
R
jc
Thermal Resistance
Junction to Case
1.65
C/W
R
ja
Junction to Ambient
62.5
T
L
Maximun Lead Temperature for Soldering
270
C
KSC5338D/KSC5338DW
High Voltage Power Switch Switching
Application
Wide Safe Operating Area
Built-in Free-Wheeling Diode
Suitable for Electronic Ballast Application
Small Variance in Storage Time
Two Package Choices : TO-220 or D2-PAK
1.Base 2.Collector 3.Emitter
1
C
B
E
Equivalent Circuit
2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC533
8D/KSC533
8D
W
Electrical Characteristics
T
C
=25
C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
=1mA, I
E
=0
1000
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
=5mA, I
B
=0
450
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
=1mA, I
C
=0
12
V
I
CBO
Collector Cut-off Current
V
CB
=800V, I
E
=0
10
A
I
CES
Collector Cut-off Current
V
CES
=1000V,
I
EB
=0
T
C
=25
C
100
A
T
C
=125
C
500
A
I
CEO
Collector Cut-off Current
V
CE
=450V, I
B
=0
T
C
=25
C
100
A
T
C
=125
C
500
A
I
EBO
Emitter Cut-off Current
V
EB
=10V, I
C
=0
10
A
h
FE
DC Current Gain
V
CE
=1V, I
C
=0.8A
T
C
=25
C
15
25
T
C
=125
C
10
14
V
CE
=1V, I
C
=2A
T
C
=25
C
6
9
T
C
=125
C
4
6
V
CE
=2.5V, I
C
=1A
T
C
=25
C
18
25
T
C
=125
C
14
18
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=0.8A, I
B
=0.08A
T
C
=25
C
0.35
0.5
V
T
C
=125
C
0.55
0.75
V
I
C
=2A, I
B
=0.4A
T
C
=25
C
0.47
0.75
V
T
C
=125
C
0.9
1.1
V
I
C
=0.8A, I
B
=0.04A
T
C
=25
C
0.9
1.5
V
T
C
=125
C
1.8
2.5
V
I
C
=1A, I
B
=0.2A
T
C
=25
C
0.22
0.5
V
T
C
=125
C
0.3
0.6
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
CS
=0.8A,
I
B
=0.08A
T
C
=25
C
0.8
1.0
V
T
C
=125
C
0.65
0.9
V
I
C
=2A, I
B
=0.4A
T
C
=25
C
0.9
1.0
V
T
C
=125
C
0.8
0.9
V
C
ib
Input Capacitance
V
EB
=10V, I
C
=0.5A, f=1MHz
550
750
pF
C
ob
Output Capacitance
V
CB
=10V, I
E
=0, f=1MHz
60
100
pF
f
T
Current Gain Bandwidth Product
I
C
=0.5A,V
CE
=10V
11
MHz
V
F
Diode Forward Voltage
I
F
=1A, I
C
=1mA,
I
E
=0
T
C
=25
C
0.86
1.3
V
T
C
=125
C
0.79
V
I
F
=2A
T
C
=25
C
0.95
1.5
V
T
C
=125
C
0.88
V
t
fr
Diode Froward Recvery Time
(di/dt=10A/
s)
I
F
=0.4A
I
F
=1A
I
F
=2A
460
360
325
ns
ns
ns
V
CE(DSAT)
Dynamic Saturation Voltage
I
C
=1A, I
B1
=100mA
V
CC
=300V at 1
s
T
C
=25
C
8
V
T
C
=125
C
15
V
I
C
=1A, I
B1
=100mA
V
CC
=300V at 3
s
T
C
=25
C
2.9
V
T
C
=125
C
8
V
I
C
=2A, I
B1
=400mA
V
CC
=300V at 1
s
T
C
=25
C
9
V
T
C
=125
C
17
V
I
C
=2A, I
B1
=400mA
V
CC
=300V at 3
s
T
C
=25
C
1.9
V
T
C
=125
C
8.5
V
2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC533
8D/KSC533
8D
W
Electrical Characteristics
T
C
=25
C unless otherwise noted
Symbol
Parameter
Test Condition
Min
Typ.
Max.
Units
RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=40
s)
t
ON
Turn ON Time
I
C
=2.5A, I
B1
=500mA
I
B2
=1A, V
CC
=250V, R
L
= 100
500
750
ns
t
STG
Storage Time
1.2
1.5
s
t
F
Fall Time
100
200
ns
t
ON
Turn ON Time
I
C
=2A,
I
B1
=400mA
I
B2
=1A,
V
CC
=300V
R
L
= 150
T
C
=25
C
100
150
ns
T
C
=125
C
150
ns
t
STG
Storage Time
T
C
=25
C
1.4
2.2
s
T
C
=125
C
1.7
s
t
F
Fall Time
T
C
=25
C
90
150
ns
T
C
=125
C
150
ns
t
ON
Turn ON Time
I
C
=2.5A,
I
B1
=500mA
I
B2
=5mA,
V
CC
=300V
R
L
= 120
T
C
=25
C
120
150
ns
T
C
=125
C
150
ns
t
STG
Storage Time
T
C
=25
C
1.8
2.1
s
T
C
=125
C
2.6
s
t
F
Fall Time
T
C
=25
C
110
150
ns
T
C
=125
C
160
ns
INDUCTIVE LOAD SWITCHING (V
CC
=15V)
t
STG
Storage Time
I
C
=2.5A,
I
B1
=500mA
I
B2
=0.5A,
V
Z
=350V
L
C
=300
H
T
C
=25
C
1.9
2.2
s
T
C
=125
C
2.4
s
t
F
Fall Time
T
C
=25
C
160
200
ns
T
C
=125
C
330
ns
t
C
Cross-over Time
T
C
=25
C
350
500
ns
T
C
=125
C
750
ns
t
STG
Storage Time
I
C
=2A,
I
B1
=400mA
I
B2
=0.4A,
V
Z
=300V
L
C
=200
H
T
C
=25
C
1.95
2.25
s
T
C
=125
C
2.9
s
t
F
Fall Time
T
C
=25
C
120
150
ns
T
C
=125
C
270
ns
t
C
Cross-over Time
T
C
=25
C
300
450
ns
T
C
=125
C
700
ns
t
STG
Storage Time
I
C
=1A,
I
B1
=100mA
I
B2
=0.5A,
V
Z
=300V
L
C
=200
H
T
C
=25
C
0.6
0.8
s
T
C
=125
C
1.0
s
t
F
Fall Time
T
C
=25
C
70
ns
T
C
=125
C
110
ns
t
C
Cross-over Time
T
C
=25
C
80
130
ns
T
C
=125
C
170
ns
2000 Fairchild Semiconductor International
KSC533
8D/KSC533
8D
W
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. DC current Gain
Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Collector-Emitter Saturation Voltage
Figure 6. Base-Emitter Saturation Voltage
0
2
4
6
8
10
0
1
2
3
4
5
0.9A
0.8A
0.7A
0.6A
0.5A
0.4A
0.3A
0.2A
I
B
= 0
I
B
= 1A
I
B
= 0.1A
I
C
[A
], CO
L
L
E
C
T
O
R
CURRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.01
0.1
1
10
1
10
100
Tj = +25
O
C
Tj = 125
O
C
V
CE
= 1V
Tj = -25
O
C
h
F
E,
DC CU
RRENT
GAIN
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
1
10
100
Tj = +25
O
C
Tj = 125
O
C
V
CE
= 5V
Tj = -25
O
C
h
F
E,
DC CU
RRENT
GAIN
I
C
[A], COLLECTOR CURRENT
1E-3
0.01
0.1
1
10
0.1
1
10
Tj = +25
O
C
Tj = 125
O
C
I
C
= 5I
B
Tj = -25
O
C
V
CE
(
s
a
t
)
[
V], CO
L
L
E
C
T
O
R-
EM
IT
T
E
R
V
O
L
T
AGE
I
C
[A], COLLECTOR CURRENT
1E-3
0.01
0.1
1
10
0.1
1
10
Tj = +25
O
C
Tj = 125
O
C
I
C
= 10I
B
Tj = -25
O
C
V
CE
(
s
a
t
)
[
V], CO
L
L
E
C
T
O
R-
EM
IT
T
E
R
V
O
L
T
AGE
I
C
[A], COLLECTOR CURRENT
1E-3
0.01
0.1
1
10
0.1
1
10
Tj = +25
O
C
Tj = 125
O
C
I
C
= 5I
B
Tj = -25
O
C
V
BE
(
s
a
t
)
[
V]
,
BASE-
EM
I
T
TER VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
2000 Fairchild Semiconductor International
KSC533
8D/KSC533
8D
W
Rev. A, February 2000
Typical Characteristics
(Continued)
Figure 7. Base-Emitter Saturation Voltage
Figure 8. Collector Output Capacitance
Figure 9. Forward Recovery Time
Figure 10. Switching Time
Figure 11. Induction Storage Time
Figure 12. Inductive Crossover Time
1E-3
0.01
0.1
1
10
0.1
1
10
Tj = +25
O
C
Tj = 125
O
C
I
C
= 10I
B
Tj = -25
O
C
V
BE
(
s
a
t
)
[
V]
,
BASE-
EM
I
T
TER VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
1
10
100
10
100
1000
2000
C
ib
C
ob
f = 1MHz
C
ob
, C
ib
[
p
F
], C
A
P
A
C
IT
A
NCE
REVERSE VOLTAGE [V]
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
250
300
350
400
450
500
di/dt = 10A/
S
T
C
= 25
O
C
t
fr
,
[
nS
], F
O
RWA
RD RE
CO
V
E
R
Y
T
I
M
E
I
F
[A], FORWARD CURRENT
1
10
0.01
0.1
1
10
0.2
t
STG
t
F
V
CC
= 250V
I
C
= 5I
B1
= 2.5I
B2
t
ST
G
, t
F
[n
S
]
, SW
IT
CHI
NG
T
I
ME
I
C
[A], COLLECTOR CURRENT
0
5
10
15
20
2
3
4
5
I
Bon
= I
Boff
V
CC
= 15V
V
Z
= 300V
L
C
= 200
H
I
C
= 2A @ Tj=125
O
C
I
C
= 2A @ Tj=25
O
C
I
C
= 1A @ Tj=125
O
C
I
C
= 1A @ Tj=25
O
C
t
ST
G
[
S
], S
T
OR
A
G
E
T
I
M
E
h
FE
, FORCED GAIN
2
4
6
8
10
12
14
16
18
20
0
500
1000
1500
2000
I
Bon
= I
Boff
V
CC
= 15V
V
Z
= 300V
L
C
= 200
H
I
C
= 2A @ Tj=125
O
C
I
C
= 2A @ Tj=25
O
C
I
C
= 1A @ Tj=125
O
C
I
C
= 1A @ Tj=25
O
C
t
C
[nS
], CROS
S
O
V
E
R T
I
M
E
h
FE
, FORCED GAIN
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