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2001 Fairchild Semiconductor Corporation
Rev. A, October 2001
KSC534
5
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
* Pulse Test: Pulse Width = 5ms, Duty Cycle
10%
Thermal Characteristics
T
C
=25
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
900
V
V
CEO
Collector-Emitter Voltage
450
V
V
EBO
Emitter-Base Voltage
14
V
I
C
Collector Current (DC)
5
A
I
CP
*Collector Current (Pulse)
10
A
I
B
Base Current (DC)
2
A
I
BP
*Base Current (Pulse)
4
A
P
C
Power Dissipation(T
C
=25
C)
40
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 55 ~ 150
C
Symbol
Characteristics
Rating
Unit
R
jc
Thermal Resistance
Junction to Case
1.25
C/W
R
ja
Junction to Ambient
62.5
KSC5345
High Voltage and High Reliability
High speed Switching
Wide Safe Operating Area
1.Base 2.Collector 3.Emitter
1
TO-220
2001 Fairchild Semiconductor Corporation
Rev. A, October 2001
KSC534
5
Electrical Characteristics
T
C
=25
C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
= 500
A, I
E
= 0
900
-
-
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= 5mA, I
B
= 0
450
-
-
V
BV
EBO
Emitter-Base Breakdown Voltage
I
C
=500
A, I
E
= 0
14
-
-
V
I
CBO
Collector Cut-off Current
V
CB
= 800V, I
E
= 0
-
-
10
A
I
EBO
Emitter Cut-off Current
V
EB
= 14V, I
C
= 0
-
-
10
A
h
FE1
h
FE2
DC Current Gain
V
CE
= 5V, I
C
= 0.6A
V
CE
= 5V, I
C
= 3A
15
8
-
-
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 3A, I
B
= 0.6A
-
-
1
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 3A, I
B
= 0.6A
-
-
1.5
V
C
ob
Output Capacitance
V
CB
= 10V, f = 1MHz
-
65
pF
f
T
Current Gain bandwidth Product
V
CE
= 10V, I
C
= 0.6A
-
14
-
MHz
t
STG
Storage Time
V
CC
= 125V, I
C
= 1A
I
B1
= -I
B2
= 0.2A
-
6.5
s
t
F
Fall Time
-
-
0.3
t
STG
Storage Time
V
CC
= 250V, I
C
= 4A
I
B1
= 0.8A, I
B2
= -1.6A
-
-
3
s
t
F
Fall Time
-
-
0.3
2001 Fairchild Semiconductor Corporation
KSC534
5
Rev. A, October 2001
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
Figure 5. Switching Time
Figure 6. Safe Operating Area
0
2
4
6
8
10
0
1
2
3
4
5
I
B
= 100mA
I
B
= 700
mA
I
B
= 600
mA
I
B
= 500
mA
I
B
= 400
mA
I
B
= 300m
A
I
B
= 200mA
I
C
[A
], CO
L
L
E
C
T
O
R
C
U
R
R
E
N
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.01
0.1
1
10
1
10
100
V
CE
= 5V
h
FE
,
D
C
CU
RRE
NT
G
A
I
N
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
0.01
0.1
1
10
I
C
= 5 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(s
a
t
), V
CE
(s
a
t
)[V
]
,
S
A
T
U
R
A
T
I
O
N
V
O
LT
A
G
E
I
C
[A], COLLECTOR CURRENT
1
10
100
1000
1
10
100
1000
f = 1MHz
I
E
= 0
C
ob
[p
F
], C
APA
CIT
A
N
C
E
V
CB
[V], COLLECTOR-BASE VOLTAGE
0.1
1
10
0.01
0.1
1
10
V
CC
=250V,
5I
B1
= -5I
B2
=I
C
t
F
t
STG
t
ON
, t
ST
G
, t
F
[
s],
T
I
M
E
I
C
[A], COLLECTOR CURRENT
1
10
100
1000
0.01
0.1
1
10
100
10
0
s
10
m
s
50
s
1m
s
DC
Pulse
I
C
[
A
]
,
COL
L
EC
T
O
R
C
URR
EN
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
2001 Fairchild Semiconductor Corporation
KSC534
5
Rev. A, October 2001
Typical Characteristics
(Continued)
Figure 7. Reverse Bias Safe Operating Area
Figure 8. Power Derating
10
100
1000
10000
0.01
0.1
1
10
100
I
B2
= -1A
L = 200
H
I
C
[
A
]
,
COL
L
EC
T
O
R
C
URR
EN
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
0
20
40
60
80
P
C
[W
], PO
W
E
R
D
I
S
S
IPA
T
I
O
N
T
C
[
o
C], CASE TEMPERATURE
Package Demensions
2001 Fairchild Semiconductor Corporation
Rev. A, October 2001
KSC534
5
Dimensions in Millimeters
4.50
0.20
9.90
0.20
1.52
0.10
0.80
0.10
2.40
0.20
10.00
0.20
1.27
0.10
3.60
0.10
(8.70)
2.80
0.10
15.90
0.20
10.08
0.30
18.95MAX.
(1.70)
(3.70)
(3.00)
(1.46)
(1.00)
(45
)
9.20
0.20
13.08
0.20
1.30
0.10
1.30
+0.10
0.05
0.50
+0.10
0.05
2.54TYP
[2.54
0.20
]
2.54TYP
[2.54
0.20
]
TO-220
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